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Tai-Lung Wu

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2 publications

preprint2014arXiv

Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams

We present results from an experimental study of the equilibrium and non-equilibrium transport properties of vanadium oxide nanobeams near the metal-insulator transition (MIT). Application of a large electric field in the insulating phase across the nanobeams produces an abrupt MIT and the individual roles of thermal and non-thermal effects in driving the transition are studied. Transport measurements at temperatures (TT) far below the critical temperature (TcT_c) of MIT, in several nanoscale vanadium oxide devices, show that both TT and electric field play distinctly separate, but critical roles in inducing the MIT. Specifically, at T<<TcT << T_c electric field dominates the MIT through an avalanche-type process, whereas thermal effects become progressively critical as TT approaches TcT_c.

preprint2010arXiv

Temperature and Voltage Driven Tunable Metal-Insulator Transition in Individual WxV1−xO2W_{x}V_{1-x}O_{2} nanowires

Results from transport measurements in individual WxV1−xO2W_{x}V_{1-x}O_{2} nanowires with varying extents of WW doping are presented. An abrupt thermally driven metal-insulator transition (MIT) is observed in these wires and the transition temperature decreases with increasing WW content at a pronounced rate of - (48-56) K/at.at.%W, suggesting a significant alteration of the phase diagram from the bulk. These nanowires can also be driven through a voltage-driven MIT and the temperature dependence of the insulator to metal and metal to insulator switchings are studied. While driving from an insulator to metal, the threshold voltage at which the MIT occurs follows an exponential temperature dependence ($V_{TH\uparrow}\propto\exp(\nicefrac{-T}{T_{0}})) $whereas driving from a metal to insulator, the threshold voltage follows VTH↓∝Tc−TV_{TH\downarrow}\propto\sqrt{T_{c}-T} and the implications of these results are discussed.

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