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Sarbajit Banerjee

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cond-mat.mes-hall cond-mat.str-el cond-mat.mtrl-sci

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preprint2014arXiv

Non-monotonic resistance noise in the charge density wave pinned state in single nanoribbons of CDW conductor NbSe$_{3}$

Electrical transport and broadband resistance noise measurements in an ultra low frequency window (30 mHz - 8 Hz) are carried out in single nanoribbon devices of charge density wave (CDW) conductor NbSe$_{3}$. In the temperature and electric field range where the CDW is expected to be completed pinned by residual impurities, a hitherto unseen non-monotonic behavior in the noise magnitude vs. electric field is observed. This behavior can be attributed to the proliferation of thermally activated phase slip events and this idea is supported by the observation of a smeared activated behavior described by the Dutta-Horn relation. Certain features of the temperature dependence of the noise magnitude do not follow an activated behavior pointing to a complex origin of the fluctuations in a CDW system.

preprint2014arXiv

Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams

We present results from an experimental study of the equilibrium and non-equilibrium transport properties of vanadium oxide nanobeams near the metal-insulator transition (MIT). Application of a large electric field in the insulating phase across the nanobeams produces an abrupt MIT and the individual roles of thermal and non-thermal effects in driving the transition are studied. Transport measurements at temperatures ($T$) far below the critical temperature ($T_c$) of MIT, in several nanoscale vanadium oxide devices, show that both $T$ and electric field play distinctly separate, but critical roles in inducing the MIT. Specifically, at $T << T_c$ electric field dominates the MIT through an avalanche-type process, whereas thermal effects become progressively critical as $T$ approaches $T_c$.

preprint2011arXiv

Synthesis, Characterization, and Finite Size Effects on Electrical Transport of Nanoribbons of the Charge-Density Wave Conductor NbSe3

NbSe3 exhibits remarkable anisotropy in most of its physical properties and has been a model system for studies of quasi-one-dimensional charge-density-wave (CDW) phenomena. Herein, we report the synthesis, characterization, and electrical transport of single-crystalline NbSe3 nanoribbons by a facile one-step vapour transport process involving the transport of selenium powder onto a niobium foil substrate. Our investigations aid the understanding of the CDW nature of NbSe3 and the growth process of the material. They also indicate that NbSe3 nanoribbons have enhanced CDW properties compared to those of the bulk phase due to size confinement effects, thus expanding the search for new mesoscopic phenomena at the nanoscale level. Single nanoribbon measurements on the electrical resistance as a function of temperature show charge-density wave transitions at 59 K and 141 K. We also demonstrate significant enhancement in the depinning effect and sliding regimes mainly attributed to finite size effects.

preprint2010arXiv

Temperature and Voltage Driven Tunable Metal-Insulator Transition in Individual $W_{x}V_{1-x}O_{2}$ nanowires

Results from transport measurements in individual $W_{x}V_{1-x}O_{2}$ nanowires with varying extents of $W$ doping are presented. An abrupt thermally driven metal-insulator transition (MIT) is observed in these wires and the transition temperature decreases with increasing $W$ content at a pronounced rate of - (48-56) K/$at.%W$, suggesting a significant alteration of the phase diagram from the bulk. These nanowires can also be driven through a voltage-driven MIT and the temperature dependence of the insulator to metal and metal to insulator switchings are studied. While driving from an insulator to metal, the threshold voltage at which the MIT occurs follows an exponential temperature dependence ($V_{TH\uparrow}\propto\exp(\nicefrac{-T}{T_{0}})) $whereas driving from a metal to insulator, the threshold voltage follows $V_{TH\downarrow}\propto\sqrt{T_{c}-T}$ and the implications of these results are discussed.