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Tadashi Orita

Tadashi Orita appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2020arXiv

Development of a Low-noise Front-end ASIC for CdTe Detectors

We present our latest ASIC, which is used for the readout of Cadmium Telluride double-sided strip detectors (CdTe DSDs) and high spectroscopic imaging. It is implemented in a 0.35 um CMOS technology (X-Fab XH035), consists of 64 readout channels, and has a function that performs simultaneous AD conversion for each channel. The equivalent noise charge of 54.9 e- +/- 11.3 e- (rms) is measured without connecting the ASIC to any detectors. From the spectroscopy measurements using a CdTe single-sided strip detector, the energy resolution of 1.12 keV (FWHM) is obtained at 13.9 keV, and photons within the energy from 6.4 keV to 122.1 keV are detected. Based on the experimental results, we propose a new low-noise readout architecture making use of a slew-rate limited mode at the shaper followed by a peak detector circuit.

preprint2015arXiv

Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET

To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche multiplication. However higher gain of SPAD seems very attractive, photon detection efficiency per unit area is low. This weak point is mainly caused by Geiger avalanche mechanism. To overcome these difficulties, we designed Pixelated Linear Avalanche Integration Detector using Silicon on Insulator technology (SOI-Plaid). To avoid dark count noise and dead time comes from quench circuit, we are planning to use APD in linear multiplication mode. SOI technology enables laminating readout circuit and APD layer, and high-speed and low-noise signal reading regardless smaller gain of linear APD. This study shows design of linear APD by using SOI fabrication process. We designed test element group (TEG) of linear APD and inspected optimal structure of linear APD.

preprint2015arXiv

SOI Pixel Sensor for Gamma-Ray Imaging

SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor has also been developed for the application of X-ray astronomy with the purpose of reducing the noise using anti-coincidence event. This trigger mode SOI pixel sensor working with in the rate of kilo Hz is also a promising scatter detector for advanced Compton imaging to track the Compton recoiled electrons.