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Researcher profile

T. Z. Ward

T. Z. Ward contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hall

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Published work

5 published item(s)

preprint2014arXiv

Active control of magnetoresistance of organic spin valves using ferroelectricity

Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$

We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.

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preprint2014arXiv

Tuning the metal-insulator transition in manganite films through surface exchange coupling with magnetic nanodots

In strongly correlated electronic systems, such as manganites, the global transport behavior depends sensitively on the spin ordering, whose alteration often requires a large external magnetic field. Here we show that the spin ordering in manganites can be easily controlled by exchange field across the interface between a ferromagnet and a manganite. By depositing isolated ferromagnetic nanodots on a manganite thin film, we find that it is possible to overcome dimensionality and strain effects to raise the metal-insulator transition (MIT) temperature by over 200 K and increase the magnetoresistance by 5000%. The MIT temperature can also be tuned by controlling the density of the magnetic nanodots which indicates that the formation process of electronic phase separation can be controlled by the presence of magnetic nanodots.

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preprint2013arXiv

Unit cell orientation of tetragonal-like BiFeO$_3$ thin films grown on highly miscut LaAlO$_3$ substrates

Synchrotron and lab-scale x-ray diffraction shows that tetragonal-like T&#39;-BiFeO3 films on miscut LaAlO3 substrates (miscut < 5 deg) exhibit (00l)-planes tilted away from those of the substrate as predicted by the &#34;Nagai model&#34; (except for miscut <0.2 deg). Tilts as large as 1 deg are achieved even in 100 nm thick films, strikingly larger than those observed in other perovskites. We attribute this to the large c/a ratio and the high crystalline coherency of the T&#39;-BiFeO3/LaAlO3 interface. This coherency is possible through an observed &#34;diagonal-on-diagonal&#34; alignment. Interestingly, the substrate miscut does not influence the relative population of monoclinic domains.

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preprint2012arXiv

Dynamics of a first order electronic phase transition in manganites

By reducing an electronically phase separated manganite (La[1-y]Pr[y])[x]Ca[1-x]MnO3 single crystal thin film to dimensions on the order of the inherent phase domains, it is possible to isolate and monitor the behavior of single domains at a first order transition. At this critical point, it is possible to study the coexistence, formation and annihilation processes of discrete electronic phase domains. With this technique, we make several new observations on the mechanisms leading to the metal insulator transition in manganites. We observe that domain formation is emergent and random, the transition process from the metallic phase to the insulating phase takes longer than the reverse process, electric field effects are more influential in driving a phase transition than current induced electron heating, and single domain transition dynamics can be tuned through careful application of temperature and electric field.

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