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Researcher profile

C. Beekman

C. Beekman contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

3 published item(s)

preprint2012arXiv

The role of stepped surfaces on the magnetotransport in strained thin films of La0.67Ca0.33MnO3

We report a comparative study of the properties of very thin films of La0.67Ca0.33MnO3 grown epitaxially under strain on flat SrTiO3 (STO) and on 1 deg miscut STO. For the films on flat STO the transport properties show well-known behavior, namely values of the metal-insulator transition temperature which are strongly reduced with respect to the bulk value. The reduction in films on miscut STO is significantly less strong than in films on flat STO, even though they appear similar as to strain state. Moreover, the residual resistance at low temperatures is lower than for the case of flat films. Magnetically, we find reduced values of the saturation magnetization with respect to the bulk value, indicating the presence of a dead layer in both cases. We argue that the higher density of the step edges on the miscut substrates lead to strain relaxation in the form of point defects and an increased electronic bandwidth, which actually make the electronic properties more robust.

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preprint2011arXiv

Fabrication and Characterization of Topological Insulator Bi$_2$Se$_3$ Nanocrystals

In the recently discovered class of materials known as topological insulators, the presence of strong spin-orbit coupling causes certain topological invariants in the bulk to differ from their values in vacuum. The sudden change of invariants at the interface results in metallic, time reversal invariant surface states whose properties are useful for applications in spintronics and quantum computation. However, a key challenge is to fabricate these materials on the nanoscale appropriate for devices and probing the surface. To this end we have produced 2 nm thick nanocrystals of the topological insulator Bi$_2$Se$_3$ via mechanical exfoliation. For crystals thinner than 10 nm we observe the emergence of an additional mode in the Raman spectrum. The emergent mode intensity together with the other results presented here provide a recipe for production and thickness characterization of Bi$_2$Se$_3$ nanocrystals.

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preprint2011arXiv

Manganese valence and magnetotransport in ultrathin films of La$_{0.67}$Ca$_{0.33}$MnO$_3$

We report a comparative study of the properties of very thin films of La$_{0.67}$Ca$_{0.33}$MnO$_3$ grown epitaxially under strain on flat SrTiO$_3$ (STO), lattice matched on NdGaO$_3$ (NGO), and strained on $1^{\circ}$-miscut STO. We use transmission electron microscopy and electron energy loss spectroscopy to study the microstructure, composition, and Mn valence state. Near the interface we find no significant segregation, but a charge compensation layer where the valence is enhanced over the nominal value of 3.3+, and a relaxation to this value over several nanometer. The transport properties show well-known behavior for the films on flat STO and NGO, namely values of the metal-insulator transition temperature which are strongly (STO) or only little (NGO) reduced with respect to the bulk value. The reduction in films on miscut STO however is less strong than in films on flat STO, even though they appear similar as to strain state and interface layer. Magnetically, we find reduced values of the saturation magnetization for the strained films with respect to the bulk value, which cannot only be ascribed to the interface layer.

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