Source author record

T. Nojima

T. Nojima appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.str-el cond-mat.mes-hall cond-mat.supr-con

Catalog footprint

What is connected

5works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2021arXiv

Elastic study of electric quadrupolar correlation in the paramagnetic state of a frustrated quantum magnet $\rm Tb_{2+\it δ}Ti_{2-\it δ}O_7$

Electric quadrupolar state in a frustrated quantum magnet $\rm Tb_{2+\it δ}Ti_{2-\it δ}O_7$ has been studied by means of ultrasonic and magnetostriction measurements. A single crystal showed elastic anomaly at about 0.4 K, manifesting a long-range quadrupole ordering. By investigating anisotropy of the magnetoelastic responses, we found a crossover temperature for the strongly correlated quadrupole state, below which the experimental data of elastic constant and magnetostriction become qualitatively different from their calculations based on a single-ion model. We suppose that relatively high onset temperature of the quadrupole correlation compared with the transition temperature is ascribed to the geometrical frustration effect, and this correlated state seems to be responsible for the unusual properties in the paramagentic state of $\rm Tb_2Ti_2O_7$.

preprint2021arXiv

Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas

We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical electric field and electron density. At a magnetic field of 24 T, we observe FQH states at several filling factors, namely $ν= 5/3$, $2/3$, and $1/3$, in addition to the $ν= 4/3$ previously reported for an InAs 2DEG. The $ν= 4/3$ and $5/3$ states, which are absent at zero back-gate voltage, emerge as the quantum well is made more symmetric by applying a positive back-gate voltage. The dependence of zero-field electron mobility on the quantum-well asymmetry reveals a significant contribution of interface-roughness scattering, with much stronger scattering at the lower InAs/AlGaSb interface. However, the dependence of the visibility of the FQH effects on the quantum-well asymmetry is not entirely consistent with that of mobility, suggesting that a different source of disorder is also at work.

preprint2020arXiv

Magnetic-field-induced topological phase transition in Fe-doped (Bi,Sb)$_2$Se$_3$ heterostructures

Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as the quantum anomalous Hall (QAH) effect with a chiral edge conduction and a quantized value of the Hall resistance ${R_{yx}}$. Here, we report on the emergence of distinct topological phases in paramagnetic Fe-doped (Bi,Sb)${_2}$Se${_3}$ heterostructures with varying structure architecture, doping, and magnetic and electric fields. Starting from a 3D-TI, a two-dimensional insulator appears at layer thicknesses below a critical value, which turns into an Anderson insulator for Fe concentrations sufficiently large to produce localization by magnetic disorder. With applying a magnetic field, a topological transition from the Anderson insulator to the QAH state occurs, which is driven by the formation of an exchange gap owing to a giant Zeeman splitting and reduced magnetic disorder. Topological phase diagram of (Bi,Sb)${_2}$Se${_3}$ allows exploration of intricate interplay of topological protection, magnetic disorder, and exchange splitting.

preprint2019arXiv

Anomalous Hall effect at the spontaneously electron-doped polar surface of PdCoO2 ultrathin films

We revealed the electrical transport through surface ferromagnetic states of a nonmagnetic metal PdCoO2. Electronic reconstruction at the Pd-terminated surface of PdCoO2 induces Stoner-like ferromagnetic states, which could lead to spin-related phenomena among the highly conducting electrons in PdCoO2. Fabricating a series of nanometer-thick PdCoO2 thin films, we detected a surface-magnetization-driven anomalous Hall effect via systematic thickness- and termination-dependent measurements. Besides, we discuss that finite magnetic moments in electron doped CoO2 triangular lattices may have given rise to additional unconventional Hall resistance.

preprint2015arXiv

Electric-field-induced superconductivity in electrochemically-etched ultrathin FeSe films on SrTiO3 and MgO

Among the recently discovered iron-based superconductors, ultrathin films of FeSe grown on SrTiO3 substrates have uniquely evolved into a high superconducting-transition-temperature (TC) material. The mechanisms for the high-TC superconductivity are ongoing debate mainly with the superconducting gap characterized with in-situ analysis for FeSe films grown by bottom-up molecular-beam epitaxy. Here, we demonstrate the alternative access to investigate the high-TC superconductivity in ultrathin FeSe with top-down electrochemical etching technique in three-terminal transistor configuration. In addition to the high-TC FeSe on SrTiO3, the electrochemically etched ultrathin FeSe transistor on MgO also exhibits superconductivity around 40 K, implying that the application of electric-field effectively contributes to the high-TC superconductivity in ultrathin FeSe regardless of substrate material. Moreover, the observable critical thickness for the high-TC superconductivity is expanded up to 10-unit-cells under applying electric-field and the insulator-superconductor transition is electrostatically controlled. The present demonstration implies that the electric-field effect on both conduction and valence bands plays a crucial role for inducing high-TC superconductivity in FeSe.