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T. Low

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Published work

4 published item(s)

preprint2015arXiv

Anisotropic exciton Stark shift in black phosphorus

We calculate the excitonic spectrum of few-layer black phosphorus by direct diagonalization of the effective mass Hamiltonian in the presence of an applied in-plane electric field. The strong attractive interaction between electrons and holes in this system allows one to investigate the Stark effect up to very high ionizing fields, including also the excited states. Our results show that the band anisotropy in black phosphorus becomes evident in the direction dependent field induced polarizability of the exciton.

preprint2014arXiv

Anomalous Reflection Phase of Graphene Plasmons and its Influence on Resonators

The phase picked up by a graphene plasmon upon scattering by an abrupt edge is commonly assumed to be $-π$. Here, it is demonstrated that for high plasmon momenta this reflection phase is $\approx -3π/4$, virtually independent on either chemical potential, wavelength or dielectric substrate. This non-trivial phase arises from a complex excitation of highly evanescent modes close to the edge, which are required to satisfy the continuity of electric and magnetic fields. A similar result for the reflection phase is expected for other two-dimensional systems supporting highly confined plasmons (very thin metal films, topological insulators, transition polaritonic layers, etc.). The knowledge of the reflection phase, combined with the phase picked up by the plasmon upon propagation, allows the estimation of resonator properties from the dispersion relation of plasmons in the infinite monolayer.

preprint2011arXiv

Gaps tunable by electrostatic gates in strained graphene

We show that when the pseudomagnetic fields created by long wavelength deformations are appropriately coupled with a scalar electric potential, a significant energy gap can emerge due to the formation of a Haldane state. Ramifications of this physical effect are examined through the study of various strain geometries commonly seen in experiments, such as strain superlattices and wrinkled suspended graphene. Of particular technological importance, we consider setup where this gap can be tunable through electrostatic gates, allowing for the design of electronic devices not realizable with other materials.