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Andrey Chaves

Andrey Chaves contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Distinctive g-factor of moire-confined excitons in van der Waals heterostructures

We investigated experimentally the valley Zeeman splitting of excitonic peaks in the photoluminescence (PL) spectra of high-quality hBN/WS2/MoSe2/hBN heterostructures at near-zero twist angles under perpendicular magnetic fields up to 20 T. We identify two neutral exciton peaks in the PL spectra: the lower energy one exhibits a reduced g-factor relative to that of the higher energy peak, and much lower than the recently reported values for interlayer excitons in other van der Waals (vdW) heterostructures. We provide evidence that such a discernible g-factor stems from the spatial confinement of the exciton in the potential landscape created by the moire pattern, due tolattice mismatch and/or inter-layer twist in heterobilayers. This renders magneto-PL an important tool to reach deeper understanding of the effect of moire patterns on excitonic confinement in vdW heterostructures.

preprint2020arXiv

Boosting quantum yields in 2D semiconductors via proximal metal plates

Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton lifetime due to the defect traps and the strong exciton-exciton interaction in TMDs has significantly limited the efficiency of exciton emission from this class of materials. Here, we show that exciton-exciton dipolar field interaction in 1L-WS2 can be effectively screened using an ultra-flat Au film substrate separated by multilayers of hexagonal boron nitride. Under this geometry, dipolar exciton-exciton interaction becomes quadrupole-quadrupole interaction because of effective image dipoles formed inside the metal. The suppressed exciton-exciton interaction leads to a significantly improved quantum yield by an order of magnitude, which is also accompanied by a reduction in the exciton-exciton annihilation (EEA) rate, as confirmed by time-resolved optical measurements. A semiclassical model accounting for the screening of the dipole-dipole interaction qualitatively captures the dependence of EEA on exciton densities. Our results suggest that fundamental EEA processes in the TMD can be engineered through proximal metallic screening, which represents a practical approach towards high-efficiency 2D light emitters.

preprint2020arXiv

Electronic and transport properties of anisotropic semiconductor quantum wires

Within the effective-mass approximation, we theoretically investigated the electronic and transport properties of 2D semiconductor quantum wires (QWs) with anisotropic effective masses and different orientations with respect to the anisotropic axis. The energy levels in the absence and presence of an external magnetic field are analytically calculated, showing: (i) a strong dependence on the spacing of energy levels related to the alignment QW angle and the anisotropy axis; and (ii) for non-null magnetic field, the quantum Hall edge states are significantly affected by the edge orientation. Moreover, by means of the split-operator technique, we analyzed the time evolution of wavepackets in straight and V-shaped anisotropic QWs and compared the transmission probabilities with those of isotropic systems. In the anisotropic case we found damped oscillations in the average values of velocity in both x and y directions for a symmetric Gaussian wavepacket propagating along a straight wide QW, with the oscillation being more evident as the non-collinearity between the group velocity and momentum vectors increases.

preprint2020arXiv

Exciton g-factors of van der Waals heterostructures from first principles calculations

External fields are a powerful tool to probe optical excitations in a material. The linear energy shift of an excitation in a magnetic field is quantified by its effective g-factor. Here we show how exciton g-factors and their sign can be determined by converged first principles calculations. We apply the method to monolayer excitons in semiconducting transition metal dichalcogenides and to interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers and obtain good agreement with recent experimental data. The precision of our method allows to assign measured g-factors of optical peaks to specific transitions in the band structure and also to specific regions of the samples. This revealed the nature of various, previously measured interlayer exciton peaks. We further show that, due to specific optical selection rules, g-factors in van der Waals heterostructures are strongly spin- and stacking-dependent. The calculation of orbital angular momenta requires the summation over hundreds of bands, indicating that for the considered two-dimensional materials the basis set size is a critical numerical issue. The presented approach can potentially be applied to a wide variety of semiconductors.