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T. I. Larkin

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Published work

4 published item(s)

preprint2014arXiv

Spin-density-wave-induced anomalies in the optical conductivity of AFe2As2, (A=Ca, Sr, Ba) single-crystalline iron pnictides

We report the complex dielectric function of high-quality $A\textrm{Fe}_2\textrm{As}_2$, ($A$=Ca, Sr, Ba) single crystals with $T_{\mathrm{N}}\approx150\ \textrm{K}$, $200\ \textrm{K}$, and $138\ \textrm{K}$, respectively, determined by broadband spectroscopic ellipsometry at temperatures $10\leq T\leq300\ \textrm{K}$ and wavenumbers from $100\ \textrm{cm}^{-1}$ to $52000\ \textrm{cm}^{-1}$. In $\textrm{CaFe}_2\textrm{As}_2$ we identify the optical spin-density--wave gap $2Δ_{\mathrm{SDW}}\approx1250\ \textrm{cm}^{-1}$. The $2Δ_{\mathrm{SDW}}/(k_{\mathrm{B}}T_{\mathrm{N}})$ ratio, characterizing the strength of the electron-electron coupling in the spin-density--wave state, amounts to $\approx12$ in $\textrm{CaFe}_2\textrm{As}_2$, significantly larger than the corresponding values for the $\textrm{SrFe}_2\textrm{As}_2$ and $\textrm{BaFe}_2\textrm{As}_2$ compounds: 8.7 and 5.3, respectively. We further show that, similarly to the Ba-based compound, two characteristic SDW energy gaps can be identified in the infrared-conductivity spectra of both $\textrm{SrFe}_2\textrm{As}_2$ and $\textrm{CaFe}_2\textrm{As}_2$ and investigate their detailed temperature dependence in all three materials. This analysis reveals the existence of an anomaly in $\textrm{CaFe}_2\textrm{As}_2$ at a temperature $T^*\approx80\ \textrm{K}$, well below the Néel temperature of this compound, which implies weak coupling between the two SDW subsystems. The coupling between the two subsystems evolves to intermediate in the Sr-based and strong in the Ba-based material. The temperature dependence of the infrared phonons reveals clear anomalies at the corresponding Néel temperatures of the investigated compounds. In $\textrm{CaFe}_2\textrm{As}_2$, the phonons exhibit signatures of SDW fluctuations above $T_N$ and some evidence for anomalies at $T^*$. (full abstract in PDF)

preprint2013arXiv

Fano Resonances in the Infrared Spectra of Phonons in Hyper-Kagome Na_3Ir_3O_8

We report the complex dielectric function of high-quality Na_3Ir_3O_8 single crystals determined by spectroscopic ellipsometry in the spectral range from 15 meV to 2 eV. The far-infrared phonon spectra exhibit highly asymmetric line shapes characteristic of Fano resonances. With decreasing temperature, we observe a sharp increase of the infrared intensity of the Fano-shaped phonon modes accompanied by concomitant changes in the low energy electronic background, formed by electronic transitions between Ir 5d t_2g bands of a mostly J_eff = 1/2 character. The role of the complex Hyper-Kagome lattice structure and strong spin-orbit coupling is considered.

preprint2013arXiv

Large resistivity change and phase transition in LiMnAs

Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOMnAs and related materials. Interestingly, both LiMnAs and LaOMnAs show a variation in resistivity with more than five orders of magnitude, making them particularly suitable for use in future electronic devices. From neutron and X-ray diffraction measurements on LiMnAs we have observed a magnetic phase transition corresponding to the Neel temperature of 373.8 K, and a structural transition from the tetragonal to the cubic phase at 768 K. These experimental results are supported by density functional theory (DFT) calculations.

preprint2012arXiv

Ferromagnetic Josephson switching device with high characteristic voltage

We develop a fast Magnetic Josephson Junction (MJJ) - a superconducting ferromagnetic device for a scalable high-density cryogenic memory compatible in speed and fabrication with energy-efficient Single Flux Quantum (SFQ) circuits. We present experimental results for Superconductor-Insulator-Ferromagnet-Superconductor (SIFS) MJJs with high characteristic voltage IcRn of >700 uV proving their applicability for superconducting circuits. By applying magnetic field pulses, the device can be switched between MJJ logic states. The MJJ IcRn product is only ~30% lower than that of conventional junction co-produced in the same process, allowing for integration of MJJ-based and SIS-based ultra-fast digital SFQ circuits operating at tens of gigahertz.