Computational materials design of attractive Fermion system with large negative effective in the hole-doped Delafossite of CuAlO, AgAlO and AuAlO
In order to realize super-high-critical temperature superconductors (>1,000 K) based on general design rules for negative effective systems by controlling purely-electronic and attractive Fermion mechanisms, we perform computational materials design for the negative system in hole-doped two-dimensional (2D) Delafossite CuAlO, AgAlO and AuAlO from calculations. It is found that the large negative in the hole-doped attractive Fermion systems for CuAlO ( = -4.53 eV), AgAlO ( = -4.88 eV), AuAlO ( = -4.14 eV). These values are 10 times larger than that in hole-doped three-dimensional (3D) CuFeS ( = -0.44 eV). For future calculations of the and phase diagram by quantum Monte Carlo simulations, we propose the negative Hubbard model with the anti-bonding single -band model for CuAlO, AgAlO and AuAlO by using the parameters obtained from electronic structure calculations. The behavior of in the 2D Delafossite of CuAlO, AgAlO and AuAlO and 3D Chalcopyrite of CuFeS shows the interesting chemical trend, increases exponentially in the weak coupling regime ( 2 eV) (where is the band width of Hubbard model) for the hole-doped CuFeS, and then goes through a maximum when (2.8 eV, 3.5 eV) for the hole-doped AgAlO and AuAlO, and finally decreases with increasing in the strong coupling regime, where (1.7 eV), for the hole-doped CuAlO. In this strong coupling regime, one can expect that = 1,000 2,000 K by assuming the relation of the very strong coupling as = 50 100 and the superconducting gap = 4.53 eV 50,000 K.