Computational materials design of attractive Fermion system with large negative effective U in the hole-doped Delafossite of CuAlO2, AgAlO2 and AuAlO2
In order to realize super-high-critical temperature (Tc) superconductors (Tc>1,000 K) based on general design rules for negative effective U (Ueff) systems by controlling purely-electronic and attractive Fermion mechanisms, we perform computational materials design for the negative Ueff system in hole-doped two-dimensional (2D) Delafossite CuAlO2, AgAlO2 and AuAlO2 from ab initio calculations. It is found that the large negative Ueff in the hole-doped attractive Fermion systems for CuAlO2 (Ueff = -4.53 eV), AgAlO2 (Ueff = -4.88 eV), AuAlO2 (Ueff = -4.14 eV). These values are 10 times larger than that in hole-doped three-dimensional (3D) CuFeS2 (Ueff = -0.44 eV). For future calculations of the Tc and phase diagram by quantum Monte Carlo simulations, we propose the negative Ueff Hubbard model with the anti-bonding single π-band model for CuAlO2, AgAlO2 and AuAlO2 by using the parameters obtained from ab initio electronic structure calculations. The behavior of Tc in the 2D Delafossite of CuAlO2, AgAlO2 and AuAlO2 and 3D Chalcopyrite of CuFeS2 shows the interesting chemical trend, i.e., Tc increases exponentially in the weak coupling regime ∣Ueff∣<W (∼ 2 eV) (where W is the band width of Hubbard model) for the hole-doped CuFeS2, and then Tc goes through a maximum when ∣Ueff∣∼W (2.8 eV, 3.5 eV) for the hole-doped AgAlO2 and AuAlO2, and finally Tc decreases with increasing ∣Ueff∣ in the strong coupling regime, where ∣Ueff∣>W (1.7 eV), for the hole-doped CuAlO2. In this strong coupling regime, one can expect that Tc = 1,000 ∼ 2,000 K by assuming the relation of the very strong coupling as 2Δ/kBTc = 50 ∼100 and the superconducting gap Δ∼∣Ueff∣ = 4.53 eV ∼ 50,000 K.
