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T. Fournier

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cond-mat.mes-hall cond-mat.supr-con

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preprint2015arXiv

Reversibility of Superconducting Nb Weak Links Driven by the Proximity Effect in a Quantum Interference Device

We demonstrate the role of proximity effect in the thermal hysteresis of superconducting constrictions. From the analysis of successive thermal instabilities in the transport characteristics of micron-size superconducting quantum interference devices with a well-controlled geometry, we obtain a complete picture of the different thermal regimes. These determine whether the junctions are hysteretic or not. Below the superconductor critical temperature, the critical current switches from a classical weak-link behavior to one driven by the proximity effect. The associated small amplitude of the critical current makes it robust with respect to the heat generation by phase-slips, leading to a non-hysteretic behavior.

preprint2011arXiv

Fabrication of stable and reproducible sub-micron tunnel junctions

We have performed a detailed study of the time stability and reproducibility of sub-micron $Al/AlO_{x}/Al$ tunnel junctions, fabricated using standard double angle shadow evaporations. We have found that by aggressively cleaning the substrate before the evaporations, thus preventing any contamination of the junction, we obtained perfectly stable oxide barriers. We also present measurements on large ensembles of junctions which prove the reproducibility of the fabrication process. The measured tunnel resistance variance in large ensembles of identically fabricated junctions is in the range of only a few percents. Finally, we have studied the effect of different thermal treatments on the junction barrier. This is especially important for multiple step fabrication processes which imply annealing the junction.

preprint2006arXiv

Measurement of thermal conductance of silicon nanowires at low temperature

We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on Silicon On Insulator (SOI) substrate. We measure the thermal conductance of the phonon wave guide by the 3 method. The cross-section of the nanowire approaches the dominant phonon wavelength in silicon which is of the order of 100 nm at 1K. Above 1.3K the conductance behaves as T3, but a deviation is measured at the lowest temperature which can be attributed to the reduced geometry.