Researcher profile

C. B. Winkelmann

C. B. Winkelmann contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2019arXiv

Magnetic-Field-Induced Transition in a Quantum Dot Coupled to a Superconductor

The magnetic moment of a quantum dot can be screened by its coupling to a superconducting reservoir, depending on the hierarchy of the superconducting gap and the relevant Kondo scale. This screening-unscreening transition can be driven by electrostatic gating, tunnel coupling, and, as we demonstrate here, magnetic field. We perform high-resolution spectroscopy of subgap excitations near the screening-unscreening transition of asymmetric superconductor - quantum dot - superconductor (S-QD-S) junctions formed by the electromigration technique. Our measurements reveal a re-entrant phase boundary determined by the competition between Zeeman energy and gap reduction with magnetic field. We further track the evolution of the phase transition with increasing temperature, which is also evidenced by thermal replicas of subgap states.

preprint2016arXiv

Single Quantum Level Electron Turnstile

We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates electron turnstile operation. Compared to the more conventional superconductor - normal metal - superconductor turnstile, our SQS device presents a number of novel properties, including higher immunity to the unavoidable presence of non-equilibrium quasiparticles in superconducting leads. In addition, we demonstrate its ability to deliver electrons with a very narrow energy distribution.

preprint2015arXiv

Charge Puddles in Graphene Near the Dirac Point

The charge carrier density in graphene on a dielectric substrate such as SiO$_2$ displays inhomogeneities, the so-called charge puddles. Because of the linear dispersion relation in monolayer graphene, the puddles are predicted to grow near charge neutrality, a markedly distinct property from conventional two-dimensional electron gases. By performing scanning tunneling microscopy/spectroscopy on a mesoscopic graphene device, we directly observe the puddles' growth, both in spatial extent and in amplitude, as the Dirac point is approached. Self-consistent screening theory provides a unified description of both the macroscopic transport properties and the microscopically observed charge disorder.

preprint2015arXiv

Controlling hysteresis in superconducting constrictions with a resistive shunt

We demonstrate control of the thermal hysteresis in superconducting constrictions by adding a resistive shunt. In order to prevent thermal relaxation oscillations, the shunt resistor is placed in close vicinity of the constriction, making the inductive current-switching time smaller than the thermal equilibration time. We investigate the current-voltage characteristics of the same constriction with and without the shunt-resistor. The widening of the hysteresis-free temperature range is explained on the basis of a simple model.

preprint2015arXiv

Reversibility of Superconducting Nb Weak Links Driven by the Proximity Effect in a Quantum Interference Device

We demonstrate the role of proximity effect in the thermal hysteresis of superconducting constrictions. From the analysis of successive thermal instabilities in the transport characteristics of micron-size superconducting quantum interference devices with a well-controlled geometry, we obtain a complete picture of the different thermal regimes. These determine whether the junctions are hysteretic or not. Below the superconductor critical temperature, the critical current switches from a classical weak-link behavior to one driven by the proximity effect. The associated small amplitude of the critical current makes it robust with respect to the heat generation by phase-slips, leading to a non-hysteretic behavior.

preprint2014arXiv

Ripples and Charge Puddles in Graphene on a Metallic Substrate

Graphene on a dielectric substrate exhibits spatial doping inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the Dirac point. Here we show the coexistence and correlation of charge puddles and topographic ripples in graphene decoupled from the metallic substrate it was grown on. The analysis of interferences of Dirac fermion-like electrons yields a linear dispersion relation, indicating that graphene on a metal can recover its intrinsic electronic properties.

preprint2013arXiv

Niobium-based superconducting nano-devices fabrication using all-metal suspended masks

We report a novel method for the fabrication of superconducting nanodevices based on niobium. The well-known difficulties of lithographic patterning of high-quality niobium are overcome by replacing the usual organic resist mask by a metallic one. The quality of the fabrication procedure is demonstrated by the realization and characterization of long and narrow superconducting lines and niobium-gold-niobium proximity SQUIDs.

preprint2013arXiv

Trapping hot quasi-particles in a high-power superconducting electronic cooler

The performance of hybrid superconducting electronic coolers is usually limited by the accumulation of hot quasi-particles in the superconducting leads. This issue is all the more stringent in large-scale and high-power devices, as required by applications. Introducing a metallic drain connected to the superconducting electrodes via a fine-tuned tunnel barrier, we efficiently remove quasi-particles and obtain electronic cooling from 300 mK down to 130 mK with a 400 pW cooling power. A simple thermal model accounts for the experimental observations.

preprint2009arXiv

Superconductivity in a single C60 transistor

Single molecule transistors (SMTs) are currently attracting enormous attention as possible quantum information processing devices. An intrinsic limitation to the prospects of these however is associated to the presence of a small number of quantized conductance channels, each channel having a high access resistance of at best $R_{K}/2=h/2e^{2}$=12.9 k$Ω$. When the contacting leads become superconducting, these correlations can extend throughout the whole system by the proximity effect. This not only lifts the resistive limitation of normal state contacts, but further paves a new way to probe electron transport through a single molecule. In this work, we demonstrate the realization of superconducting SMTs involving a single C60 fullerene molecule. The last few years have seen gate-controlled Josephson supercurrents induced in the family of low dimensional carbon structures such as flakes of two-dimensional graphene and portions of one-dimensional carbon nanotubes. The present study involving a full zero-dimensionnal fullerene completes the picture.