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Anjan K. Gupta

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Published work

11 published item(s)

preprint2019arXiv

Elimination of thermal bistability in superconducting weak links by an inductive shunt

The quantum phase-coherent behavior of superconducting weak links (WL) is often quenched in the finite voltage state, due to the heat dissipation and related thermal hysteresis. The latter can be reduced by improving heat evacuation and/or by lowering the critical current, so that a phase-dynamic regime is obtained, albeit over a narrow bias-current and temperature range. Here we demonstrate that an inductive shunt with well-chosen parameters introduces unexpected nonlinear dynamics that destabilize an otherwise stable fixed point in the dissipative branch. This leads to a nonhysteretic behavior with large voltage oscillations in intrinsically hysteretic WL-based micron-size superconducting quantum interference devices. A dynamic thermal model quantitatively describes our observations and further allows us to elaborate on the optimal shunting conditions.

preprint2015arXiv

Controlling hysteresis in superconducting constrictions with a resistive shunt

We demonstrate control of the thermal hysteresis in superconducting constrictions by adding a resistive shunt. In order to prevent thermal relaxation oscillations, the shunt resistor is placed in close vicinity of the constriction, making the inductive current-switching time smaller than the thermal equilibration time. We investigate the current-voltage characteristics of the same constriction with and without the shunt-resistor. The widening of the hysteresis-free temperature range is explained on the basis of a simple model.

preprint2015arXiv

Reversibility of Superconducting Nb Weak Links Driven by the Proximity Effect in a Quantum Interference Device

We demonstrate the role of proximity effect in the thermal hysteresis of superconducting constrictions. From the analysis of successive thermal instabilities in the transport characteristics of micron-size superconducting quantum interference devices with a well-controlled geometry, we obtain a complete picture of the different thermal regimes. These determine whether the junctions are hysteretic or not. Below the superconductor critical temperature, the critical current switches from a classical weak-link behavior to one driven by the proximity effect. The associated small amplitude of the critical current makes it robust with respect to the heat generation by phase-slips, leading to a non-hysteretic behavior.

preprint2015arXiv

Weakening of the spin density wave gap at low temperatures in SrFe$_2$As$_2$ single crystals

We report on temperature dependent scanning tunneling microscopy and spectroscopy studies of undoped SrFe$_{2}$As$_{2}$ single crystals from 6 K to 292 K. Resistivity data show spin density wave (SDW) transition at T$_{SDW}$ $\approx$ 205 K and the superconducting transition at $\sim$ 21 K while magnetic susceptibility does not show any superconductivity. Conductance maps and local tunneling spectra show an electronically homogeneous surface at all studied temperatures. Tunnel spectra correlate well with the SDW transition with a depression in the density of states near the Fermi energy below T$_{SDW}$. On further lowering the temperature, the width of this partial energy gap associated with the SDW decreases. Using the anti-correlation of superconducting phase with SDW, we interpret this gap weakening as a precursor to superconductivity. This may give rise to a facile nucleation of superconductivity near defects.

preprint2014arXiv

Electronic inhomogeneities in the superconducting phase of CaFe1.96Ni0.04As2 single crystals

Superconductivity in Iron-Arsenic based pnictides emerges in close proximity to an antiferromagnetic (AFM)ordered parent state and the AFM phase overlaps with superconducting (SC) phase in some pnictides for certain range of doping. CaFe2-xNixAs2 belongs to this category, where both the phases overlap. Here we use scanning tunneling microscopy and spectroscopy to investigate the local electronic properties of uderdoped CaFe1.96Ni0.04As2 single crystals in the vicinity of the boundary of the two phases. Both resistivity and magnetic measurements show that a tiny portion (~ 1.2 %) of this compound becomes superconductor below the SC onset temperature TC ~ 15 K. Topographic images show reasonably flat surface with signatures of atomic resolution. High temperature spectra are spatially homogeneous and show signatures of spin density wave (SDW) gap with a finite density of states near the Fermi energy. Below TC, spectra show significant spatial inhomogeneity with a SDW gap everywhere but at some locations we also see an asymmetric or symmetric depression in ~ +/- 5 meV energy range together with the SDW gap. Inhomogeneity reduces significantly as the temperature goes above TC and disappears completely far above TC. These observations are discussed in terms of an inhomogeneous electronic phase that may exist due to the vicinity of this composition to the SC dome boundary on the underdoped side of the phase diagram.

preprint2014arXiv

Evidence for topological surface states in metallic single crystals of Bi2Te3

Bi2Te3 is a member of a new class of materials known as topological insulators which are supposed to be insulating in the bulk and conducting on the surface. However experimental verification of the surface states has been difficult in electrical transport measurements due to a conducting bulk. We report low temperature magnetotransport measurements on single crystal samples of Bi2Te3. We observe metallic character in our samples and large and linear magnetoresistance from 1.5 K to 290 K with prominent Shubnikov-de Haas (SdH) oscillations whose traces persist upto 20 K. Even though our samples are metallic we are able to obtain a Berry phase close to the value of π expected for Dirac fermions of the topological surface states. This indicates that we might have obtained evidence for the topological surface states in metallic single crystals of Bi2Te3. Other physical quantities obtained from the analysis of the SdH oscillations are also in close agreement with those reported for the topological surface states. The linear magnetoresistance observed in our sample, which is considered as a signature of the Dirac fermions of the surface states, lends further credence to the existence of topological surface states.

preprint2014arXiv

Temperature and phase dynamics in superconducting weak-link

A time dependent thermal model for a superconducting constriction based weak-link (WL) is discussed for investigating the deterministic dynamics of its temperature and phase. A new dynamic regime is found where a non-zero voltage exists across the WL and its temperature stabilizes between the bath temperature and superconductor's critical temperature. This regime exists over a limited bias current range and gives rise to a new hysteretic regime in current-voltage characteristics. We also discuss the effect of fluctuations on the current-voltage characteristics and experimental implications of this dynamic regime.

preprint2010arXiv

Hysteresis in superconducting short weak links and $μ$-SQUIDs

Thermal hysteresis in a micron-size Superconducting Quantum Interference Device ($μ$-SQUID), with weak links as Josephson junctions, is an obstacle for improving its performance for magnetometery. Following the "hot-spot" model of Skocpol et al. [J. Appl. Phys. {\bf 45}, 4054 (1974)] and by incorporating the temperature dependence of thermal conductivity of superconductor using a linear approximation, we find a much better agreement with the observed temperature dependence of the retrapping current in short superconducting Nb-based weak links and $μ$-SQUIDs. In addition, using the temperature dependence of the critical current, we find that above a certain temperature hysteresis disappears. We analyze the current-voltage characteristics and the weak link temperature variation in both the hysteretic and non-hysteretic regimes. We also discuss the effect of the weak link geometry in order to widen the temperature range of hysteresis-free operation.

preprint2010arXiv

Scanning Tunneling Microscopy and Spectroscopy study of charge inhomogeneities in bilayer Graphene

We report room temperature scanning tunneling microscopy and spectroscopy study of bilayer graphene prepared by mechanical exfoliation on SiO$_2$/Si surface and electrically contacted with gold pads using a mechanical mask. The bulk conductivity shows contribution from regions of varying electron density indicating significant charge inhomogeneity. Large scale topographic images show ripple like structures with a roughness of $\sim$1nm while the small scale atomic resolution images show graphite-like triangular lattice. Local dI/dV-V tunnel spectra have an asymmetric V-shape with the minima location showing significant spatial variation indicating inhomogeneity in electron density of order 10$^{11}$ cm-2. The minima in spectra at a fixed location also shifts linearly with the gate voltage with a slope consistent with the field induced carrier density.

preprint2010arXiv

Tip induced doping effects in local tunnel spectra of graphene

We report on tip induced doping in local tunnel spectra of single layer graphene (SLG) with tunable back-gate using room temperature scanning tunneling microscopy and spectroscopy (STM/S). The SLG samples, prepared on silicon dioxide surface by exfoliation method and verified by Raman spectra, show atomically resolved honeycomb lattice. Local tunnel spectra show two minima with a clear evolution in the position of both with doping by the back gate. A similar variation in spectra is also observed spatially due to charge inhomogeneity. With doping the two minima move in opposite directions with one showing nearly a square root dependence and the other a linear dependence on gate voltage. We explain these features as arising from the STM tip induced and bias voltage dependent doping in SLG.

preprint2009arXiv

Evidence of mobile carriers with Charge Ordering gap in Epitaxial Pr$_{0.625}$Ca$_{0.375}$MnO$_{3}$ Thin Films

Epitaxial thin films of charge-ordered Pr$_{0.625}$Ca$_{0.375}$MnO$_{3}$ have been studied using variable temperature Scanning tunneling microscopy and spectroscopy (STM/STS). The as grown films were found to be granular while the annealed films show atomic terraces at all temperatures and are found to be electronically homogeneous in 78-300K temperature range. At high temperatures (T$>$T$_{CO}\approx$ 230 K) the local tunnel spectra of the annealed films show a depression in the density of states (DOS) near Fermi energy implying a pseudogap with a significant DOS at E$_F$. The gap feature becomes more robust with cooling with a sharp jump in DOS at E$_F$ at T$_{CO}$ and with a gap value of $\sim$0.3 eV at 78K. At low temperatures we find a small but finite DOS at E$_F$ indicative of some delocalized carriers in the CO phase together with an energy gap. This is consistent with bulk transport, which shows weakening of the activation gap with cooling below 200K, and indicates the presence of two types of carriers at low temperatures.