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Researcher profile

T. Choi

T. Choi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2013arXiv

Counting statistics of hole transfer in a p-type GaAs quantum dot with dense excitation spectrum

Low-temperature transport experiments on a p-type GaAs quantum dot capacitively coupled to a quantum point contact are presented. The time-averaged as well as time-resolved detection of charging events of the dot are demonstrated and they are used to extract the tunnelling rates into and out of the quantum dot. The extracted rates exhibit a super-linear enhancement with the bias applied across the dot which is interpreted in terms of a dense spectrum of excited states contributing to the transport, characteristic for heavy hole systems. The full counting statistics of charge transfer events and the effect of back action is studied. The normal cumulants as well as the recently proposed factorial cumulants are calculated and discussed in view of their importance for interacting systems.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Highly Tunable Hybrid Quantum Dots with Charge Detection

In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local Schottky-gates, these criteria are nicely fulfilled in the resulting hybrid device. To this end, a quantum dot with adjacent charge detector is defined. After tuning the quantum dot to contain only a single electron, we are able to observe the charge detector signal of the quantum dot state for a wide range of tunnel couplings.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Incommensurability and atomic structure of c(2x2)N/Cu(100)

We use a scanning tunneling microscope operating in a low temperature, ultrahigh vacuum environment to study the atomic structure of single layer films of Cu2N grown on Cu(100). The c(2x2) lattice of Cu2N is incommensurate, with a lattice constant of 3.72 +/- 0.02 angstrom that is 3% larger than the bare Cu(100) surface. This finding suggests that strain due to lattice mismatch contributes to self assembly in this system. We find that the image contrast on Cu2N islands depends on bias voltage, which reconciles several interpretations in the literature. We assign features in these STM images to the Cu, N and hollow sites in the Cu2N lattice with the aid of co-adsorbed CO molecules. This atomic registry allows us to characterize four different defects on Cu2N, which influence the sticking coefficient and electronic coupling of adsorbates.

0 citations0 reviewsNo code linkedOpen access