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T. C. Schulthess

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.supr-con

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preprint2015arXiv

A Bespoke Single-Band Hubbard Model Material

The Hubbard model, which augments independent-electron band theory with a single parameter to describe electron-electron correlations, is widely regarded to be the `standard model' of condensed matter physics. The model has been remarkably successful at addressing a range of correlation effects in solids, but beyond one dimension its solution is intractable. Much current research aims, therefore, at finding appropriate approximations to the Hubbard model phase diagram. Here we take the new approach of using ab initio electronic structure methods to design a material whose Hamiltonian is that of the single-band Hubbard model. Solution of the Hubbard model will then be available through measurement of the material's properties. After identifying an appropriate crystal class and several appropriate chemistries, we use density functional theory and dynamical mean-field theory to screen for the desired electronic band structure and metal-insulator transition. We then explore the most promising candidates for structural stability and suitability for doping and propose specific materials for subsequent synthesis. Finally, we identify a regime -- that should manifest in our bespoke material -- in which the single-band Hubbard model on a triangular lattice exhibits exotic d-wave superconductivity.

preprint2010arXiv

Dynamic cluster quantum Monte Carlo simulations of a two-dimensional Hubbard model with stripe-like charge density wave modulations: Interplay between inhomogeneity and superconductivity

Using dynamic cluster quantum Monte Carlo simulations, we study the superconducting behavior of a 1/8 doped two-dimensional Hubbard model with imposed uni-directional stripe-like charge density wave modulation. We find a significant increase of the pairing correlations and critical temperature relative to the homogeneous system when the modulation length-scale is sufficiently large. With a separable form of the irreducible particle-particle vertex, we show that optimized superconductivity is obtained for moderate modulation strength due to a delicate balance between the modulation enhanced pairing interaction, and a concomitant suppression of the bare particle-particle excitations by a modulation reduction of the quasi-particle weight.

preprint2009arXiv

Long-term Dynamics of the Electron-nuclear Spin System of a Semiconductor Quantum Dot

A quasi-classical theoretical description of polarization and relaxation of nuclear spins in a quantum dot with one resident electron is developed for arbitrary mechanisms of electron spin polarization. The dependence of the electron-nuclear spin dynamics on the correlation time $τ_c$ of electron spin precession, with frequency $Ω$, in the nuclear hyperfine field is analyzed. It is demonstrated that the highest nuclear polarization is achieved for a correlation time close to the period of electron spin precession in the nuclear field. For these and larger correlation times, the indirect hyperfine field, which acts on nuclear spins, also reaches a maximum. This maximum is of the order of the dipole-dipole magnetic field that nuclei create on each other. This value is non-zero even if the average electron polarization vanishes. It is shown that the transition from short correlation time to $Ωτ_c>1$ does not affect the general structure of the equation for nuclear spin temperature and nuclear polarization in the Knight field, but changes the values of parameters, which now become functions of $Ωτ_c$. For correlation times larger than the precession time of nuclei in the electron hyperfine field, it is found that three thermodynamic potentials ($χ$, $\bmξ$, $ς$) characterize the polarized electron-nuclear spin system. The values of these potentials are calculated assuming a sharp transition from short to long correlation times, and the relaxation mechanisms of these potentials are discussed. The relaxation of the nuclear spin potential is simulated numerically showing that high nuclear polarization decreases relaxation rate.

preprint2006arXiv

First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN semiconductors

We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.