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A. Svane

A. Svane appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

14 published item(s)

preprint2015arXiv

Electronic Structure, Transport and Phonons of SrAg$Ch$F ($Ch$=S, Se, Te): Bulk Superlattice Thermoelectrics

We report calculations of the electronic structure, vibrational properties and transport for the p-type semiconductors, SrAg$Ch$F ($Ch$=S, Se and Te). We find soft phonons with low frequency optical branches intersecting the acoustic modes below 50 $cm^{-1}$, indicative of a material with low thermal conductivity. The bands at and near the valence band maxima are highly two dimensional, which leads to high thermopowers even at high carrier concentrations, which is a combination that suggests good thermoelectric performance. These materials may be regarded as bulk realizations of superlattice thermoelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$

Electronic and transport properties of CuGaTe$_2$, a hole-doped ternary copper based chalcopyrite type semiconductor, are studied using calculations within the Density Functional Theory and solving the Boltzmann transport equation within the constant relaxation time approximation. The electronic bandstructures are calculated by means of the full-potential linear augmented plane wave method, using the Tran-Blaha modified Becke-Johnson potential. The calculated band gap of 1.23 eV is in agreement with the experimental value of 1.2 eV. The carrier concentration- and temperature dependent thermoelectric properties of CuGaTe$_2$ are derived, and a figure of merit of $zT= 1.69$ is obtained at 950 K for a hole concentration of $3.7\cdot10^{19}$ cm$^{-3}$, in agreement with a recent experimental finding of $zT= 1.4$, confirming that CuGaTe$_2$ is a promising material for high temperature thermoelectric applications. The good thermoelectric performance of p-type CuGaTe$_2$ is associated with anisotropic transport from a combination of heavy and light bands. Also for CuSbS$_2$ (chalcostibite) a better performance is obtained for p-type than for n-type doping. The variation of the thermopower as a function of temperature and concentration suggests that CuSbS$_2$ will be a good thermoelectric material at low temperatures, similarly to the isostructural CuBiS$_2$ compound.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic topological transition in LaSn$_3$ under pressure

The electronic structure, Fermi surface and elastic properties of the iso-structural and iso-electronic LaSn$_3$ and YSn$_3$ intermetallic compounds are studied under pressure within the framework of density functional theory including spin-orbit coupling. The LaSn$_3$ Fermi surface consists of two sheets, of which the second is very complex. Under pressure a third sheet appears around compression $V/V_0=0.94$, while a small topology change in the second sheet is seen at compression $V/V_0=0.90$. This may be in accordance with the anomalous behaviour in the superconducting transition temperature observed in LaSn$_3$, which has been suggested to reflect a Fermi surface topological transition, along with a non-monotonic pressure dependence of the density of states at the Fermi level. The same behavior is not observed in YSn$_3$, the Fermi surface of which already includes three sheets at ambient conditions, and the topology remains unchanged under pressure. The reason for the difference in behaviour between LaSn$_3$ and YSn$_3$ is the role of spin-orbit coupling and the hybridization of La - $4f$ states with the Sn - $p$ states in the vicinity of the Fermi level, which is well explained using the band structure calculation. The elastic constants and related mechanical properties are calculated at ambient as well as at elevated pressures. The elastic constants increase with pressure for both compounds and satisfy the conditions for mechanical stability under pressure.

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preprint2013arXiv

Structural, Vibrational, Elastic and Topological Properties of PaN Under Pressure

Electronic, structural, vibrational and elastic properties of PaN have been studied both at ambient and high pressures, using first principles methods with several commonly used parameterizations of the exchange-correlation energy. The generalized gradient approximation (GGA) reproduces the ground state properties satisfactorily. Under pressure PaN is found to undergo a structural transition from NaCl to the R-3m structure near 58 GPa. The high pressure behavior of the acoustic phonon branch along the (1,0,0) and (1,1,0) directions, and the C44 elastic constant are anomalous, which signals the structural transition. With GGA exchange-correlation, a topological transition in the charge density occurs near the structural transition which may be regarded as a quantum phase transition, where the order parameter obeys a mean field scaling law. However, the topological transition is absent when other exchange-correlation functionals are invoked (local density approximation (LDA) and hybrid functional). Therefore, this constitutes an example of GGA and LDA leading to qualitatively different predictions, and it is of great interest to examine experimentally whether this topological transition occurs.

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preprint2013arXiv

The Electronic Correlation Strength of Pu

An electronic quantity, the correlation strength, is defined as a necessary step for understanding the properties and trends in strongly correlated electronic materials. As a test case, this is applied to the different phases of elemental Pu. Within the GW approximation we have surprisingly found a "universal" scaling relationship, where the f-electron bandwidth reduction due to correlation effects is shown to depend only on the local density approximation bandwidth and is otherwise independent of crystal structure and lattice constant.

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preprint2012arXiv

Effect of van der Waals interactions on the structural and elastic properties of black phosphorus

The structural and elastic properties of orthorhombic black phosphorus have been investigated using first-principles calculations based on density functional theory. The structural parameters have been calculated using the local density approximation (LDA), the generalized gradient approximation (GGA), and with several dispersion corrections to include van der Waals interactions. It is found that the dispersion corrections improve the lattice parameters over LDA and GGA in comparison with experimental results. The calculations reproduce well the experimental trends under pressure and show that van der Waals interactions are most important for the crystallographic b-axis, in the sense that they have the largest effect on the bonding between the phosphorus layers. The elastic constants are calculated and are found to be in good agreement with experimental values. The calculated C$_{22}$ elastic constant is significantly larger than the C$_{11}$ and C$_{33}$ parameters, implying that black phosphorus is stiffer against strain along the a-axis than along the b- and c-axes. From the calculated elastic constants,the mechanical properties such as bulk modulus, shear modulus, Young's modulus and Poisson's ratio are obtained. The calculated Raman active optical phonon frequencies and their pressure variations are in excellent agreement with available experimental results.

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preprint2010arXiv

Rare Earth Monopnictides and Monochalcogenides from First Principles: Towards an Electronic Phase Diagram of Strongly Correlated Materials

We present results of an ab-initio study of the electronic structure of 140 rare earth compounds. Specifically we predict an electronic phase diagram of the entire range of rare earth monopnictides and monochalcogenides, composed of metallic, semiconducting and heavy fermion-like regions, and exhibiting valency transitions brought about by a complex interplay between ligand chemistry and lanthanide contraction. The calculations exploit the combined effect of a first-principles methodology, which can adequately describe the dual character of electrons, itinerant vs. localized, and high throughput computing made possible by the increasing available computational power. Our findings, including the predicted "intermediate valent" compounds SmO and TmSe, are in overall excellent agreement with the available experimental data. The accuracy of the approach, proven e.g. through the lattice parameters calculated to within 1.5% of the experimental values, and its ability to describe localization phenomena in solids, makes it a competitive atomistic simulation approach in the search for and design of new materials with specific physical properties and possible technological applications.

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preprint2010arXiv

Superconductivity in SnO: a Nonmagnetic Analog to Fe-based Superconductors?

We found that under pressure SnO with alpha-PbO structure, the same structure as in many Fe-based superconductors, e.g. beta-FeSe, undergoes a transition to a superconducting state for p > 6 GPa with a maximum Tc of 1.4 K at p = 9.3 GPa. The pressure dependence of Tc reveals a dome-like shape and superconductivity disappears for p > 16 GPa. It is further shown from band structure calculations that SnO under pressure exhibits a Fermi surface topology similar to that reported for some Fe-based superconductors and that the nesting between the hole and electron pockets correlates with the change of Tc as a function of pressure.

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preprint2009arXiv

Density functional study of elastic and vibrational properties of the Heusler-type alloys Fe$_2$VAl and Fe$_2$VGa

The structural and elastic properties as well as phonon-dispersion relations of the Heusler-type alloys Fe$_2$VAl and Fe$_2$VGa are computed using density-functional and density-functional perturbation theory within the generalized-gradient approximation. The calculated equilibrium lattice constants agree well with the experimental values. The elastic constants of Fe$_2$VAl and Fe$_2$VGa are predicted for the first time. From the elastic constants the shear modulus, Young's modulus, Poisson's ratio, sound velocities and Debye temperatures are obtained. By analyzing the ratio between the bulk and shear modulii, we conclude that both Fe$_2$VAl and Fe$_2$VGa are brittle in nature. The computed phonon-dispersion relation shows that both compounds are dynamically stable in the L1$_2$ structure without any imaginary phonon frequencies. The isomer shifts of Fe in the two compounds are discussed in terms of the Fe s partial density of states, which reveal larger ionicity/less hybridization in Fe$_2$VGa than in Fe$_2$VAl. For the same reason the Cauchy pressure is negative in Fe$_2$VAl but positive in Fe$_2$VGa

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preprint2009arXiv

Electronic structure and ionicity of actinide oxides from first principles calculations

The ground state electronic structures of the actinide oxides AO, A2O3 and AO2 (A=U, Np, Pu, Am, Cm, Bk, Cf) are determined from first-principles calculations, using the self-interaction corrected local spin-density (SIC-LSD) approximation. Emphasis is put on the degree of f-electron localization, which for AO2 and A2O3 is found to follow the stoichiometry, namely corresponding to A(4+) ions in the dioxide and A(3+) ions in the sesquioxides. In contrast, the A(2+) ionic configuration is not favorable in the monoxides, which therefore become metallic. The energetics of the oxidation and reduction of the actinide dioxides is discussed, and it is found that the dioxide is the most stable oxide for the actinides from Np onwards. Our study reveals a strong link between preferred oxidation number and degree of localization which is confirmed by comparing to the ground state configurations of the corresponding lanthanide oxides. The ionic nature of the actinide oxides emerges from the fact that only those compounds will form where the calculated ground state valency agrees with the nominal valency expected from a simple charge counting.

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preprint2009arXiv

High pressure structural study of fluoro perovskite CsCdF3 upto 60 GPa: A combined experimental and theoretical study

The structural behaviour of CsCdF3 under pressure is investigated by means of theory and experiment. High-pressure powder x-ray diffraction experiments were performed up to a maximum pressure of 60 GPa using synchrotron radiation. The cubic $Pm\bar{3}m$ crystal symmetry persists throughout this pressure range. Theoretical calculations were carried out using the full-potential linear muffin-tin orbital method within the local density approximation and the generalized gradient approximation for exchange and correlation effects. The calculated ground state properties -- the equilibrium lattice constant, bulk modulus and elastic constants -- are in good agreement with experimental results. Under ambient conditions, CsCdF3 is an indirect gap insulator with the gap increasing under pressure.

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preprint2006arXiv

First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN semiconductors

We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.

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preprint2005arXiv

Self-interaction correction in multiple scattering theory

We propose a simplified version of self-interaction corrected local spin-density (SIC-LSD) approximation, based on multiple scattering theory, which implements self-interaction correction locally, within the KKR method. The multiple scattering aspect of this new SIC-LSD method allows for the description of crystal potentials which vary from site to site in a random fashion and the calculation of physical quantities averaged over ensembles of such potentials using the coherent potential approximation (CPA). This facilitates applications of the SIC to alloys and pseudoalloys which could describe disordered local moment systems, as well as intermediate valences. As a demonstration of the method, we study the well-known $α$-$γ$ phase transition in Ce, where we also explain how SIC operates in terms of multiple scattering theory.

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preprint2004arXiv

The Electronic Structure of Europium Chalcogenides and Pnictides

The electronic structure of some europium chalcogenides and pnictides is calculated using the {\it ab-initio} self-interaction corrected local-spin-density approximation (SIC-LSD). This approach allows both a localised description of the rare earth $f-$electrons and an itinerant description of $s$, $p$ and $d$-electrons. Localising different numbers of $f$-electrons on the rare earth atom corresponds to different nominal valencies, and the total energies can be compared, providing a first-principles description of valency. All the chalcogenides are found to be insulators in the ferromagnetic state and to have a divalent configuration. For the pnictides we find that EuN is half-metallic and the rest are normal metals. However a valence change occurs as we go down the pnictide column of the Periodic Table. EuN and EuP are trivalent, EuAs is only just trivalent and EuSb is found to be divalent. Our results suggest that these materials may find application in spintronic and spin filtering devices.

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