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T. Banerjee

T. Banerjee appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elnucl-exnucl-thphysics.app-ph

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Published work

10 published item(s)

preprint2021arXiv

Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors

Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context. Complex oxide heterostructures with perpendicular magnetic anisotropy (PMA), consisting of SrRuO$_3$ (SRO) grown on SrTiO$_3$ (STO) are strong material contenders. Utilizing the crystal orientation, magnetic anisotropy in such simple heterostructures can be tuned to either exhibit a perfect or slightly tilted PMA. Here, we investigate current-induced magnetization modulation in such tailored ferromagnetic layers with a material with strong spin-orbit coupling (Pt), exploiting the spin Hall effect. We find significant differences in the magnetic anisotropy between the SRO/STO heterostructures, as manifested in the first and second harmonic magnetoresistance measurements. Current-induced magnetization switching can be realized with spin-orbit torques, but for systems with perfect PMA this switching is probabilistic as a result of the high symmetry. Slight tilting of the PMA can break this symmetry and allow the realization of deterministic switching. Control over the magnetic anisotropy of our heterostructures therefore provides control over the manner of switching. Based on our findings, we propose a three-terminal spintronic memristor, with a magnetic tunnel junction design, that shows several resistive states controlled by electric charge. Non-volatile states can be written through SOT by applying an in-plane current, and read out as a tunnel current by applying a small out-of-plane current. Depending on the anisotropy of the SRO layer, the writing mechanism is either deterministic or probabilistic allowing for different functionalities to emerge. We envisage that the probabilistic MTJs could be used as synapses while the deterministic devices can emulate neurons

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Robust skyrmion-bubble textures in SrRuO$_3$ thin films stabilized by magnetic anisotropy

Topological spin textures in an itinerant ferromagnet, SrRuO$_3$ is studied combining Hall transport measurements and numerical simulations. We observe characteristic signatures of the Topological Hall Effect associated with skyrmions. A relatively large thickness of our films and absence of heavy metal layers make the interfacial Dzyaloshinskii-Moriya interaction an unlikely source of these topological spin textures. Additionally, the transport anomalies exhibit an unprecedented robustness to magnetic field tilting and temperature. Our numerical simulations suggest that this unconventional behavior results from magnetic bubbles with skyrmion topology stabilized by magnetodipolar interactions in an unexpected region of parameter space.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electric field control of spin lifetimes in Nb-SrTiO$_3$ by spin-orbit fields

We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb-SrTiO$_{3}$ with Co/AlO$_{x}$ spin injection contacts at room temperature. The in-plane spin lifetime $τ_\parallel$ as well as the ratio of the out-of-plane to in-plane spin lifetime $τ_\perp/τ_\parallel$ is manipulated by the built-in electric field at the semiconductor surface, without any additional gate contact. The origin of this manipulation is attributed to Rashba Spin-Orbit Fields (SOFs) at the Nb-SrTiO$_3$ surface and shown to be consistent with theoretical model calculations based on SOF spin flip scattering. Additionally, the junction can be set in a high or low resistance state, leading to a non-volatile control of $τ_\perp/τ_\parallel$, consistent with the manipulation of the Rashba SOF strength. Such room temperature electric field control over the spin state is essential for developing energy-efficient spintronic devices and shows promise for complex oxide based (spin)electronics

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preprint2015arXiv

Interface control of electronic transport across the magnetic phase transition in SrRuO_3/SrTiO_3 heterointerface

The emerging material class of complex-oxides, where manipulation of physical properties lead to new functionalities at their heterointerfaces, is expected to open new frontiers in Spintronics. For example, SrRuO_3 is a promising material where external stimuli like strain, temperature and structural distortions control the stability of electronic and magnetic states, across its magnetic phase transition, useful for Spintronics. Despite this, not much has been studied to understand such correlations in SrRuO_3. Here we explore the influence of electron-lattice correlation to electron-transport, at interfaces between SrRuO_3 and Nb:SrTiO_3 across its ferromagnetic transition, using a nanoscale transport probe and first-principles calculations. We find that the geometrical reconstructions at the interface and hence modifications in electronic structures dominate the transmission across its ferromagnetic transition, eventually flipping the charge-transport length-scale in SrRuO_3. This approach can be easily extended to other devices where competing ground states can lead to different functional properties across their heterointerfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Interplay of fission modes in mass distribution of light actinide nuclei 225,227Pa

Fission-fragment mass distributions were measured for 225,227Pa nuclei formed in fusion reactions of 19F + 206, 208Pb around fusion barrier energies. Mass-angle correlations do not indicate any quasi-fission like events in this bombarding energy range. Mass distributions were fitted by Gaussian distribution and mass variance extracted. At below-barrier energies, the mass variance was found to increase with decrease in energy for both nuclei. Results from present work were compared with existing data for induced fission of 224, 226Th and 228U around barrier energies. Enhancement in mass variance of 225, 227Pa nuclei at below-barrier energies shows evidence for presence of asymmetric fission events mixed with symmetric fission events. This is in agreement with the results of mass distributions of nearby nuclei 224, 226Th and 228U where two-mode fission process was observed. Two-mode feature of fission arises due to the shell effects changing the landscape of the potential energy surfaces at low excitation energies. The excitation-energy dependence of the mass variance gives strong evidence for survival of microscopic shell effects in fission of light actinide nuclei 225, 227Pa with initial excitation energy ~30 - 50 MeV.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Towards the understanding of the origin of charge-current-induced spin voltage signals in the topological insulator Bi$_2$Se$_3$

Topological insulators provide a new platform for spintronics due to the spin texture of the surface states that are topologically robust against elastic backscattering. Here, we report on an investigation of the measured voltage obtained from efforts to electrically probe spin-momentum locking in the topological insulator Bi$_2$Se$_3$ using ferromagnetic contacts. Upon inverting the magnetization of the ferromagnetic contacts, we find a reversal of the measured voltage. Extensive analysis of the bias and temperature dependence of this voltage was done, considering the orientation of the magnetization relative to the current. Our findings indicate that the measured voltage can arise due to fringe-field-induced Hall voltages, different from current-induced spin polarization of the surface state charge carriers, as reported recently. Understanding the nontrivial origin of the measured voltage is important for realizing spintronic devices with topological insulators.

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preprint2013arXiv

Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping

We have investigated electron transport in Nb doped SrTiO$_3$ single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature invariant. We rationalize this using the hydrogenic theory for shallow donors. Further, we probe electrical transport across Schottky interfaces of Au on TiO$_2$ terminated n-type SrTiO$_3$. Quantitative analysis of macroscopic I-V measurements reveal thermionic emission dominated transport for the low doped substrate whereas it deviates from such behavior for the high doped substrate. This work is relevant for designing devices to study electronic transport using oxide-semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale

We investigate electron transport across a complex oxide heterointerface of La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) on Nb:SrTiO$_3$ (Nb:STO) at different temperatures. For this, we employ the conventional current-voltage method as well as the technique of Ballistic Electron Emission Microscopy (BEEM), which can probe lateral inhomogeneities in transport at the nanometer scale. From current-voltage measurements, we find that the Schottky Barrier height (SBH) at the LSMO/Nb:STO interface decreases at low temperatures accompanied by a larger than unity ideality factor. This is ascribed to the tunneling dominated transport caused by the narrowing of the depletion width at the interface. However, BEEM studies of such unbiased interfaces, do not exhibit SBH lowering at low temperatures, implying that this is triggered by the modification of the interface due to an applied bias and is not an intrinsic property of the interface. Interestingly, the SBH at the nanoscale, as extracted from BEEM studies, at different locations in the device is found to be spatially homogeneous and similar both at room temperature and at low temperatures. Our results highlight the application of BEEM in characterizing electron transport and their homogeneity at such unbiased complex oxide interfaces and yields new insights into the origin of the temperature dependence of the SBH at biased interfaces.

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preprint2013arXiv

Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3

SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. New oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport, that originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin injection and perpendicular spin transport in graphite nanostructures

Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation length is not necessarily large when transport is via weakly interacting molecular orbitals. Here we use graphite as a model system and study spin transport in the direction perpendicular to the weakly bonded graphene sheets. We achieve injection of highly (75%) spin-polarized electrons into graphite nanostructures of 300-500 nm across and up to 17 nm thick, and observe transport without any measurable loss of spin information. Direct visualization of local spin transport in graphite-based spin-valve sandwiches also shows spatially uniform and near-unity transmission for electrons at 1.8 eV above the Fermi level.

0 citations0 reviewsNo code linkedOpen access