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Source author record

K. G. Rana

K. G. Rana appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2013arXiv

Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping

We have investigated electron transport in Nb doped SrTiO$_3$ single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature invariant. We rationalize this using the hydrogenic theory for shallow donors. Further, we probe electrical transport across Schottky interfaces of Au on TiO$_2$ terminated n-type SrTiO$_3$. Quantitative analysis of macroscopic I-V measurements reveal thermionic emission dominated transport for the low doped substrate whereas it deviates from such behavior for the high doped substrate. This work is relevant for designing devices to study electronic transport using oxide-semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale

We investigate electron transport across a complex oxide heterointerface of La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) on Nb:SrTiO$_3$ (Nb:STO) at different temperatures. For this, we employ the conventional current-voltage method as well as the technique of Ballistic Electron Emission Microscopy (BEEM), which can probe lateral inhomogeneities in transport at the nanometer scale. From current-voltage measurements, we find that the Schottky Barrier height (SBH) at the LSMO/Nb:STO interface decreases at low temperatures accompanied by a larger than unity ideality factor. This is ascribed to the tunneling dominated transport caused by the narrowing of the depletion width at the interface. However, BEEM studies of such unbiased interfaces, do not exhibit SBH lowering at low temperatures, implying that this is triggered by the modification of the interface due to an applied bias and is not an intrinsic property of the interface. Interestingly, the SBH at the nanoscale, as extracted from BEEM studies, at different locations in the device is found to be spatially homogeneous and similar both at room temperature and at low temperatures. Our results highlight the application of BEEM in characterizing electron transport and their homogeneity at such unbiased complex oxide interfaces and yields new insights into the origin of the temperature dependence of the SBH at biased interfaces.

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preprint2013arXiv

Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3

SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. New oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport, that originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.

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