BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Syedah Afsheen Zahra

Syedah Afsheen Zahra contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-ph

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

Emergence of strong room-temperature ferroelectricity and multiferroicity in 2D-Ti$_3$C$_2$T$_x$ free-standing MXene film

Two-dimensional (2D) multiferroics are key candidate materials towards advancement of smart technology. Here, we employed a simple synthesis approach to address the long-awaited dream of developing ferroelectric and multiferroic 2D materials, specially in the new class of materials called MXenes. The etched Ti$_3$C$_2$T$_x$ MXene was first synthesized after HF-treatment followed by delamination process for successful synthesis of free-standing Ti$_3$C$_2$T$_x$ film. The free-standing film was then exposed to air at room-temperature as well as heated at different temperature to form TiO$_2$ layer derived from the Ti$_3$C$_2$T$_x$ MXene itself. TiO$_2$ is reported to be an incipient ferroelectric that assumes a ferroelectric phase in composite form. The structural and morphological analysis confirmed successful synthesis of free-standing film and the Raman spectroscopy revealed the formation of different phases of TiO$_2$. The ferroelectric measurement showed a clear polarization hysteresis loop at room-temperature. Also, the magnetic hysteresis was observed in the film indicating a possibility of coupling between ferroelectric and ferromagnetic phases at room-temperature. The magnetoelectric coupling test was also performed that showed a clear, switchable spontaneous polarization under applied magnetic field. This is the first report on existence of ferroelectric phase and multiferroic coupling in 2D free-standing MXene film at room-temperature which opens-up possibility of 2D materials-based electric and magnetic data storage applications at room-temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Multiferroic Ti$_3$C$_2$T$_x$ MXene with Tunable Ferroelectric-controlled High Performance Resistive Memory Devices

Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is rarely reported in literature. We reported a simple approach to reveal frequency-dependent ferroelectricity and mutiferroicity in Ti$_3$C$_2$T$_x$ MXene film at room-temperature. To study the frequency and poling effect on ferroelectricity as well as multiferroicity, we performed electric polarization vs. electric field measurement at different external frequencies measured under zero and non-zero static magnetic fields. In order to further investigate this effect, the magneto-electric (ME) coupling was also performed to confirm the multiferroic nature of our synthesized Ti$_3$C$_2$T$_x$ MXene film. The ferroelectric hysteresis effect was attributed to the switching of electric domain walls under low frequencies that continue to respond to at much extent to the higher frequencies. The coupling between disordered electric dipoles with local spin moments could cause presence of strong magneto-electric coupling. Moreover, the bipolar resistive switching in trilayer memory devices also supports the ferroelectric behavior of HT- Ti$_3$C$_2$T$_x$ MXene film and showed uniform repeatability in switching behavior due to minimum dielectric loss inside ferroelectric HT-Ti$_3$C$_2$T$_x$ MXene along with improved on/off ratio in comparison to non-ferroelectric Ti$_3$C$_2$T$_x$ MXene. The unique multiferroic behavior along with ferroelectric-tuned memristor devices reported here at room temperature will help understand the intrinsic nature of 2D materials and will establish novel data storage devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Silicon carbide-assisted co-existence of magnetic phases in well-optimized Ti$_3$SiC$_2$-etched MXene

Here, we report the first successful exfoliation of two-dimensional Ti$_3$C$_2$T$_x$ MXene through selective etching of silicon from titanium silicon carbide (Ti$_3$SiC$_2$) MAX. The successful etching and exfoliation of MXene is confirmed through the shifting of all (00l) peaks to lower angles along with the increase in c-lattice parameter as determined by X-ray diffraction technique to detail the material structure. The c-lattice parameter of multilayered MXene was found to be 19.34Å which was increased to 26.22 Å after delamination process indicating the successful intercalation of TMA+ ions within the MXene Sheets. The scanning electron microscopy (SEM) images show the formation of 2D layered structure. The magnetic measurement of the etched MXene sample was measured using superconducting quantum interference device (SQUID: Quantum Design). The magnetization vs magnetic (M-H) curves clearly indicate the ferromagnetic-dominant hysteresis loops at low-temperature as well as at room-temperature along with the presence of small diamagnetic phase due to the presence of silicon carbide (SiC) present in MXene structure. The presence of SiC phase is confirmed through XRD and Raman spectra that show the sharp peaks and vibrational modes of SiC within 2D MXene structure. The present work shows the co-existence of ferromagnetic and diamagnetic phases making it suitable 2D material for future spintronics devices.

0 citations0 reviewsNo code linkedOpen access