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Syed Rizwan

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3 publications

preprint2022arXiv

Emergence of strong room-temperature ferroelectricity and multiferroicity in 2D-Ti3_3C2_2Tx_x free-standing MXene film

Two-dimensional (2D) multiferroics are key candidate materials towards advancement of smart technology. Here, we employed a simple synthesis approach to address the long-awaited dream of developing ferroelectric and multiferroic 2D materials, specially in the new class of materials called MXenes. The etched Ti3_3C2_2Tx_x MXene was first synthesized after HF-treatment followed by delamination process for successful synthesis of free-standing Ti3_3C2_2Tx_x film. The free-standing film was then exposed to air at room-temperature as well as heated at different temperature to form TiO2_2 layer derived from the Ti3_3C2_2Tx_x MXene itself. TiO2_2 is reported to be an incipient ferroelectric that assumes a ferroelectric phase in composite form. The structural and morphological analysis confirmed successful synthesis of free-standing film and the Raman spectroscopy revealed the formation of different phases of TiO2_2. The ferroelectric measurement showed a clear polarization hysteresis loop at room-temperature. Also, the magnetic hysteresis was observed in the film indicating a possibility of coupling between ferroelectric and ferromagnetic phases at room-temperature. The magnetoelectric coupling test was also performed that showed a clear, switchable spontaneous polarization under applied magnetic field. This is the first report on existence of ferroelectric phase and multiferroic coupling in 2D free-standing MXene film at room-temperature which opens-up possibility of 2D materials-based electric and magnetic data storage applications at room-temperature.

preprint2020arXiv

Silicon carbide-assisted co-existence of magnetic phases in well-optimized Ti3_3SiC2_2-etched MXene

Here, we report the first successful exfoliation of two-dimensional Ti3_3C2_2Tx_x MXene through selective etching of silicon from titanium silicon carbide (Ti3_3SiC2_2) MAX. The successful etching and exfoliation of MXene is confirmed through the shifting of all (00l) peaks to lower angles along with the increase in c-lattice parameter as determined by X-ray diffraction technique to detail the material structure. The c-lattice parameter of multilayered MXene was found to be 19.34Å which was increased to 26.22 Å after delamination process indicating the successful intercalation of TMA+ ions within the MXene Sheets. The scanning electron microscopy (SEM) images show the formation of 2D layered structure. The magnetic measurement of the etched MXene sample was measured using superconducting quantum interference device (SQUID: Quantum Design). The magnetization vs magnetic (M-H) curves clearly indicate the ferromagnetic-dominant hysteresis loops at low-temperature as well as at room-temperature along with the presence of small diamagnetic phase due to the presence of silicon carbide (SiC) present in MXene structure. The presence of SiC phase is confirmed through XRD and Raman spectra that show the sharp peaks and vibrational modes of SiC within 2D MXene structure. The present work shows the co-existence of ferromagnetic and diamagnetic phases making it suitable 2D material for future spintronics devices.

preprint2019arXiv

A ππ-shaped Quantum Device for Implementation of Bell States in Solid State Environment

Electronic spin-qubit is key ingredient for quantum information processing in a solid state environment. We present a ππ-shaped two-qubit entanglement device capable of measuring the resultant states in Bell basis. In our device, source spins (↑s\uparrow_s or ↓s\downarrow_s) are electrically generated and tunnelled to channel where they interact with channel spins (↑c\uparrow_c or ↓c\downarrow_c) via exchange interaction which is responsible for 2-qubit entanglement. Electrical control over spins gives rise to the Bell states. The USWAPU_{\sqrt{SWAP}} and CNOT gate operations are implemented through these Bell states for universal quantum computation. ππ-shaped quantum device can be used as a solid state interconnect between different parts of the circuit in integrated chips.

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