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Researcher profile

Deji Akinwande

Deji Akinwande contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phcond-mat.mtrl-scicond-mat.dis-nnphysics.optics

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Published work

8 published item(s)

preprint2022arXiv

2D Materials for Future Heterogeneous Electronics

Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators leave little doubt about the potential of 2DM for applications in electronics, photonics and sensing. So where are the integrated chips and enabled products? We try to answer this by summarizing the main challenges and opportunities that have thus far prevented 2DM applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below 30 K and understanding of the SVHE-induced spin/valley polarizations that can be electrically generated is limited. Here, we study the SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR) measurements show the spatial distribution of the SVHE at different temperatures, its persistence up to 160 K, and that it can be electrically modulated via gate and drain bias. A spin/valley drift and diffusion model together with reflection spectra data is used to interpret the KR data and predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at 160 K. The excess spin and valley per unit length along the edge is calculated to be 109 per micron at 45 K, which corresponds to a spin/valley polarization on the edge of 6%. These results are important steps towards practical use of the SVHE.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Integrated ultra-high-performance graphene optical modulator

With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous material integration into Silicon- and Nitride-based photonics has showed high-speed promise, albeit at the expense of millimeter- to centimeter-scale footprints. The hunt for an electro-optic modulator that combines high speed, energy efficiency, and compactness to support high component density on-chip continues. Using a double-layer graphene optical modulator integrated on a Silicon photonics platform, we are able to achieve 60 GHz speed (3 dB roll-off), micrometer compactness, and efficiency of 2.25 fJ/bit in this paper. The electro-optic response is boosted further by a vertical distributed-Bragg-reflector cavity, which reduces the driving voltage by about 40 times while maintaining a sufficient modulation depth (5.2 dB/V). Modulators that are small, efficient, and quick allow high photonic chip density and performance, which is critical for signal processing, sensor platforms, and analog- and neuromorphic photonic processors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Metaplastic and Energy-Efficient Biocompatible Graphene Artificial Synaptic Transistors for Enhanced Accuracy Neuromorphic Computing

CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or contain materials that are toxic to biological systems. In this work, we report on biocompatible bilayer graphene-based artificial synaptic transistors (BLAST) capable of mimicking synaptic behavior. The BLAST devices leverage a dry ion-selective membrane, enabling long-term potentiation, with ~50 aJ/m^2 switching energy efficiency, at least an order of magnitude lower than previous reports on two-dimensional material-based artificial synapses. The devices show unique metaplasticity, a useful feature for generalizable deep neural networks, and we demonstrate that metaplastic BLASTs outperform ideal linear synapses in classic image classification tasks. With switching energy well below the 1 fJ energy estimated per biological synapse, the proposed devices are powerful candidates for bio-interfaced online learning, bridging the gap between artificial and biological neural networks.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Multiferroic Ti$_3$C$_2$T$_x$ MXene with Tunable Ferroelectric-controlled High Performance Resistive Memory Devices

Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is rarely reported in literature. We reported a simple approach to reveal frequency-dependent ferroelectricity and mutiferroicity in Ti$_3$C$_2$T$_x$ MXene film at room-temperature. To study the frequency and poling effect on ferroelectricity as well as multiferroicity, we performed electric polarization vs. electric field measurement at different external frequencies measured under zero and non-zero static magnetic fields. In order to further investigate this effect, the magneto-electric (ME) coupling was also performed to confirm the multiferroic nature of our synthesized Ti$_3$C$_2$T$_x$ MXene film. The ferroelectric hysteresis effect was attributed to the switching of electric domain walls under low frequencies that continue to respond to at much extent to the higher frequencies. The coupling between disordered electric dipoles with local spin moments could cause presence of strong magneto-electric coupling. Moreover, the bipolar resistive switching in trilayer memory devices also supports the ferroelectric behavior of HT- Ti$_3$C$_2$T$_x$ MXene film and showed uniform repeatability in switching behavior due to minimum dielectric loss inside ferroelectric HT-Ti$_3$C$_2$T$_x$ MXene along with improved on/off ratio in comparison to non-ferroelectric Ti$_3$C$_2$T$_x$ MXene. The unique multiferroic behavior along with ferroelectric-tuned memristor devices reported here at room temperature will help understand the intrinsic nature of 2D materials and will establish novel data storage devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Real-time detection of Ochratoxin A in wine through insight of aptamer conformation in conjunction with graphene field-effect transistor

Mycotoxins comprise a frequent type of toxins present in food and feed. The problem of mycotoxin contamination has been recently aggravated due to the increased complexity of the farm-to-fork chains, resulting in negative effects on human and animal health and, consequently, economics. The easy-to-use, on-site, on-demand, and rapid monitoring of mycotoxins in food/feed is highly desired. In this work, we report on an advanced mycotoxin biosensor based on an array of graphene field-effect transistors integrated on a single silicon chip. A specifically designed aptamer against Ochratoxin A (OTA) was used as a recognition element, where it was covalently attached to graphene surface via pyrenebutanoic acid, succinimidyl ester (PBASE) chemistry. Namely, an electric field stimulation was used to promote more efficient π-π stacking of PBASE to graphene. The specific G-rich aptamer strand suggest its π-π stacking on graphene in free-standing regime and reconfiguration in G-quadruplex during binding an OTA molecule. This realistic behavior of the aptamer is sensitive to the ionic strength of the analyte solution, demonstrating a 10-fold increase in sensitivity at low ionic strengths. The graphene-aptamer sensors reported here demonstrate fast assay with the lowest detection limit of 1.4 pM for OTA within a response time as low as 10 s, which is more than 30 times faster compared to any other reported aptamer-based methods for mycotoxin detection. The sensors hold comparable performance when operated in real-time within a complex matrix of wine without additional time-consuming pre-treatment.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward-Dutton linear charge partition scheme that guarantees charge-conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2 FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Single-defect Memristor in MoS$_2$ Atomic-layer

Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in atomic monolayers of transitional metal dichalcogenide sandwich structures has added a new dimension of interest owing to the prospects of size scaling and the associated benefits. However, the origin of the switching mechanism in atomic sheets remains uncertain. Here, using monolayer MoS$_2$ as a model system, atomistic imaging and spectroscopy reveal that metal substitution into sulfur vacancy results in a non-volatile change in resistance. The experimental observations are corroborated by computational studies of defect structures and electronic states. These remarkable findings provide an atomistic understanding on the non-volatile switching mechanism and open a new direction in precision defect engineering, down to a single defect, for achieving optimum performance metrics including memory density, switching energy, speed, and reliability using atomic nanomaterials.

0 citations0 reviewsNo code linkedOpen access