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Swastibrata Bhattacharyya

Swastibrata Bhattacharyya appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-el

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Published work

3 published item(s)

preprint2022arXiv

Structural Deformation and Metal-Semiconductor Transition in Coupled Carbon Chains

The transition between gapped (semiconducting) and gapless (metallic) phases and tunability of bandgap in materials is a very lucrative yet considerably challenging goal for new-age device preparation. For bulk materials and for two-dimensional layered systems, this is a rapidly expanding field. We theoretically propose a one-dimensional pure carbon material with a tunable bandgap. We find that two parallel coupled polyyne chains show metallic behaviour with bands crossing on the Fermi level, unlike the single semiconducting chain. The number of nodal points (two) is robust under transverse and longitudinal strain, indicating the symmetry-protected nature of the metallic phase. Sliding one chain with respect to the other breaks reflection symmetry and a clear bandgap opens up at the nodes, leading to a gapped phase. By varying the slide parameter, the bandgap can be tuned efficiently. This work initiates and indicates possible topological phases of real one-dimensional materials without the involvement of edge modes.

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preprint2014arXiv

Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS$_{2}$

The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory calculations, we show that the band gap of few layers of MoS$_2$ can be tuned by applying i) normal compressive (NC), ii) biaxial compressive (BC), and iii) biaxial tensile (BT) strain. A reversible semiconductor to metal transition (S-M transition) is observed under all three types of strain. In the case of NC strain, the threshold strain at which S-M transition occurs increases with increasing number of layers and becomes maximum for the bulk. On the other hand, the threshold strain for S-M transition in both BC and BT strain decreases with the increase in number of layers. The difference in the mechanisms for the S-M transition is explained for different types of applied strain. Furthermore, the effect of strain type and number of layers on the transport properties are also studied using Botzmann transport theory. We optimize the transport properties as a function of number of layers and applied strain. 3L- and 2L-MoS$_2$ emerge as the most efficient thermoelectric material under NC and BT strain, respectively. The calculated thermopower is large and comparable to some of the best thermoelectric materials. A comparison between the feasibility of these three types of strain is also discussed.

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preprint2012arXiv

Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides

Using first-principles calculations we show that the band gap of bilayer sheets of semiconducting transition metal dichalcogenides (TMDs) can be reduced smoothly by applying vertical compressive pressure. These materials undergo a universal reversible semiconductor to metal (S-M) transition at a critical pressure. S-M transition is attributed to lifting the degeneracy of the bands at fermi level caused by inter-layer interactions via charge transfer from metal to chalcogens. The S-M transition can be reproduced even after incorporating the band gap corrections using hybrid functionals and GW method. The ability to tune the band gap of TMDs in a controlled fashion over a wide range of energy, opens-up possibility for its usage in a range of applications.

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