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Researcher profile

Susmita Basak

Susmita Basak contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mes-hallcond-mat.supr-con

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Published work

5 published item(s)

preprint2012arXiv

Coexisting pseudogap, charge transfer gap, and Mott gap energy scales in the resonant inelastic x-ray scattering spectra of electron-doped cuprates

We present a computation of Cu K-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key normal-state energy scales: the pseudogap, charge transfer gap, and Mott gap. The calculations involve a three band Hubbard Hamiltonian based on Cu $d_{x^2-y^2}$ and O $p_x$, $p_y$ orbitals, with a self-energy correction which arises due to spin and charge fluctuations. Our theory reproduces characteristic features e.g., gap collapse, large spectral weight broadening, and spectral weight transfer as a function of doping, as seen in experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Lindhard and RPA susceptibility computations in extended momentum space in electron doped cuprates

We present an approximation for efficient calculation of the Lindhard susceptibility $χ^{L}(q,ω)$ in a periodic system through the use of simple products of real space functions and the fast Fourier transform (FFT). The method is illustrated by providing $χ^{L}(q,ω)$ results for the electron doped cuprate Nd$_{2-x}$Ce$_{x}$CuO$_{4}$ extended over several Brillouin zones. These results are relevant for interpreting inelastic X-ray scattering spectra from cuprates.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Novel Spin-texture on the warped Dirac-cone surface states in topological insulators

We have investigated the nature of surface states in the Bi2Te3 family of three-dimensional topological insulators using first-principles calculations as well as model Hamiltonians. When the surface Dirac cone is warped due to Dresselhaus spin-orbit coupling in rhombohedral structures, the spin acquires a finite out-of-plane component. We predict a novel in-plane spin-texture of the warped surface Dirac cone with spins not perpendicular to the electron momentum. Our k.p model calculation reveals that this novel in-plane spin-texture requires high order Dresselhaus spin-orbit coupling terms.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Intermediate coupling model of cuprates: adding fluctuations to a weak coupling model of pseudogap and superconductuctivity competition

We demonstrate that many features ascribed to strong correlation effects in various spectroscopies of the cuprates are captured by a calculation of the self-energy incorporating effects of spin and charge fluctuations. The self energy is calculated over the full doping range from half filling to the overdoped system. In the normal state, the spectral function reveals four subbands: two widely split incoherent bands representing the remnant of the two Hubbard bands, and two additional coherent, spin- and charge-dressed in-gap bands split by a spin-density wave, which collapses in the overdoped regime. The resulting coherent subbands closely resemble our earlier mean-field results. Here we present an overview of the combined results of our mean-field calculations and the newer extensions into the intermediate coupling regime.

0 citations0 reviewsNo code linkedOpen access