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Susanne Mueller

Susanne Mueller appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

4 published item(s)

preprint2016arXiv

Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells

Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and compare it with another sample in the non-inverted semiconducting regime. Activated behavior in conjunction with a strong suppression of the resistance peak at the charge neutrality point in a parallel magnetic field attest to the topological hybridization gap between electron and hole bands in the inverted sample. We observe an unconventional Landau level spectrum with energy gaps modulated by the magnetic field applied perpendicular to the quantum wells. This is caused by strong spin-orbit interaction provided jointly by the InAs and the GaSb quantum wells.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with $n$-type doping by phosphine. The four contacts have different separations ($d$ = 9, 12, 16 and 29 nm) to the central 6 nm $\times$ 6 nm QD island, leading to different tunnel and capacitive coupling. Cryogenic transport measurements in the Coulomb-blockade (CB) regime are used to characterize these tunnel barriers. We find that field enhancement near the apex of narrow dopant leads is an important effect that influences both barrier breakdown and the magnitude of the tunnel current in the CB transport regime. From CB-spectroscopy measurements, we extract the mutual capacitances between the QD and the four contacts, which scale inversely with the contact separation $d$. The capacitances are in excellent agreement with numerical values calculated from the pattern geometry in the hydrogen resist. We show that by engineering the source-drain tunnel barriers to be asymmetric, we obtain a much simpler excited-state spectrum of the QD, which can be directly linked to the orbital single-particle spectrum.

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preprint2015arXiv

Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.

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preprint2015arXiv

Non-local transport via edge-states in InAs/GaSb coupled quantum wells

We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,μ$m in length down to a few $μ$m gradually develop a pronounced resistance plateau near charge-neutrality, which comes along with distinct non-local transport along the edges. Plateau resistances are found to be above or below the quantized value expected for helical edge channels. We discuss these results based on the interplay between imperfect edges and residual local bulk conductivity.

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