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Researcher profile

Surendra B. Anantharaman

Surendra B. Anantharaman contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.opticsquant-ph

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Published work

4 published item(s)

preprint2022arXiv

Cavity-Enhanced Raman Scattering from 2D Hybrid Perovskites

Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) are promising candidates for optoelectronic applications due to their efficient light emission properties, and strong dielectric confinement effects. Raman spectroscopy is a versatile, non-contact and often non-destructive technique, widely used to characterize crystalline materials. However, the inherently weak phonon scattering, strong background, and complex nature of the Raman signals from HOIPs present challenges in obtaining reliable signals. Further, the fragile nature of the 2D HOIP crystals results in rapid degradation upon exposure to heat, light and moisture, which presents further difficulty in enhancing Raman scattered photon signals. Herein, we report a novel approach to enhance the weak Raman scattering signals in Ruddlesden-Popper (RP) phase HOIPs by introducing an open-cavity comprising HOIP crystals on a gold substrate. We observe 15x enhancement of the Raman signals due to the Purcell effect inside the high-index HOIP crystals. Our simple approach can be extended to enhance the study of phonon scattering in other HOIP and van der Waals layered crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nanomaterials for Quantum Information Science and Engineering

Quantum information science and engineering (QISE) which entails use of quantum mechanical states for information processing, communications, and sensing and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. In this review, we consider how nanomaterials (i.e. materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. We identify the materials challenges for specific types of qubits, and we identify how emerging nanomaterials may overcome these challenges. Challenges for and progress towards nanomaterials based quantum devices are identified. We aim to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next generation quantum devices for scalable and practical quantum applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS$_2$ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS$_2$ induces a large strain of ~5% in the MoS$_2$ which, coupled with charge transfer, leads to degenerate doping of the MoS$_2$ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kohm-um, as measured using local conductance probes. This approach was adopted to characterize MoS$_2$-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kohm-um. Our results highlight that the MoS$_2$/Metal interface is sensitive to device fabrication methods, and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Light-Matter Coupling in Scalable Van der Waals Superlattices

Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. We present optical dispersion engineering in a superlattice structure comprised of alternating layers of 2D excitonic chalcogenides and dielectric insulators. By carefully designing the unit cell parameters, we demonstrate > 90 % narrowband absorption in < 4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants. Our results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically-thin layers.

0 citations0 reviewsNo code linkedOpen access