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Researcher profile

Deep Jariwala

Deep Jariwala contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.opticscond-mat.str-elastro-ph.IMcond-mat.dis-nncond-mat.otherquant-ph

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Published work

14 published item(s)

preprint2022arXiv

Cavity-Enhanced Linear Dichroism in a van der Waals Antiferromagnet

Optical birefringence is a fundamental optical property of crystals widely used for filtering and beam splitting of photons. Birefringent crystals concurrently possess the property of linear dichroism (LD) that allows asymmetric propagation or attenuation of light with two different polarizations. This property of LD has been widely studied from small molecules to polymers and crystals but has rarely been engineered per will. Here, we use the newly discovered spin-charge coupling in van der Waals antiferromagnetic (AFM) insulator FePS3 to induce large in-plane optical anisotropy and consequently LD. We report that the LD in this AFM insulator is tunable both spectrally and magnitude-wise as a function of cavity coupling. We demonstrate near-unity LD in the visible-near infrared range in cavity-coupled FePS3 crystals and derive its dispersion as a function of cavity length and FePS3 thickness. Our results hold wide implications for use of cavity tuned LD as a diagnostic probe for strongly correlated quantum materials as well as opens new opportunities for miniaturized, on-chip beam-splitters and tunable filters.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Cavity-Enhanced Raman Scattering from 2D Hybrid Perovskites

Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) are promising candidates for optoelectronic applications due to their efficient light emission properties, and strong dielectric confinement effects. Raman spectroscopy is a versatile, non-contact and often non-destructive technique, widely used to characterize crystalline materials. However, the inherently weak phonon scattering, strong background, and complex nature of the Raman signals from HOIPs present challenges in obtaining reliable signals. Further, the fragile nature of the 2D HOIP crystals results in rapid degradation upon exposure to heat, light and moisture, which presents further difficulty in enhancing Raman scattered photon signals. Herein, we report a novel approach to enhance the weak Raman scattering signals in Ruddlesden-Popper (RP) phase HOIPs by introducing an open-cavity comprising HOIP crystals on a gold substrate. We observe 15x enhancement of the Raman signals due to the Purcell effect inside the high-index HOIP crystals. Our simple approach can be extended to enhance the study of phonon scattering in other HOIP and van der Waals layered crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

High Density, Localized Quantum Emitters in Strained 2D Semiconductors

Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach to creating large areas of localized emitters with high density (~150 emitters/um2) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WSe2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters opens a new path towards scalable, tunable, and versatile quantum light sources.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nanomaterials for Quantum Information Science and Engineering

Quantum information science and engineering (QISE) which entails use of quantum mechanical states for information processing, communications, and sensing and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. In this review, we consider how nanomaterials (i.e. materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. We identify the materials challenges for specific types of qubits, and we identify how emerging nanomaterials may overcome these challenges. Challenges for and progress towards nanomaterials based quantum devices are identified. We aim to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next generation quantum devices for scalable and practical quantum applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs

Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ultrathin Broadband Metasurface Superabsorbers from a van der Waals Semimetal

Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and semiconductors have been demonstrated, semimetals-based metasurfaces in the vis-NIR range are notably missing. Here, we experimentally demonstrate a broadband metasurface superabsorber based on large area, semimetallic, van der Waals PtSe2 thin films in agreement with electromagnetic simulations. Our results show that PtSe2 is an ultrathin and scalable semimetal that concurrently possesses high index and high extinction across the vis-NIR range. Consequently, the thin-film PtSe2 on a reflector separated by a dielectric spacer can absorb > 85 % for the unpatterned case and ~97 % for the optimized 2D metasurface in the 400-900 nm range making it one of the strongest and thinnest broadband perfect absorbers to date. Our results present a scalable approach to photodetection and solar energy harvesting, demonstrating the practical utility of high index, high extinction semimetals for nanoscale optics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS$_2$ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS$_2$ induces a large strain of ~5% in the MoS$_2$ which, coupled with charge transfer, leads to degenerate doping of the MoS$_2$ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kohm-um, as measured using local conductance probes. This approach was adopted to characterize MoS$_2$-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kohm-um. Our results highlight that the MoS$_2$/Metal interface is sensitive to device fabrication methods, and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Light-Matter Coupling in Scalable Van der Waals Superlattices

Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. We present optical dispersion engineering in a superlattice structure comprised of alternating layers of 2D excitonic chalcogenides and dielectric insulators. By carefully designing the unit cell parameters, we demonstrate > 90 % narrowband absorption in < 4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants. Our results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically-thin layers.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Multi-scale photonic emissivity engineering for relativistic lightsail thermal regulation

The Breakthrough Starshot Initiative aims to send a gram-scale probe to Proxima Centuri B using a laser-accelerated lightsail traveling at relativistic speeds. Thermal management is a key lightsail design objective because of the intense laser powers required but has generally been considered secondary to accelerative performance. Here, we demonstrate nanophotonic photonic crystal slab reflectors composed of 2H-phase molybdenum disulfide and crystalline silicon nitride, highlight the inverse relationship between the thermal band extinction coefficient and the lightsail&#39;s maximum temperature, and examine the trade-off between the acceleration distance and setting realistic sail thermal limits, ultimately realizing a thermally endurable acceleration minimum distance of 16.3~Gm. We additionally demonstrate multi-scale photonic structures featuring thermal-wavelength-scale Mie resonant geometries, and characterize their broadband Mie resonance-driven emissivity enhancement and acceleration distance reduction. Our results highlight new possibilities in simultaneously controlling optical and thermal response over broad wavelength ranges in ultralight nanophotonic structures.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook

The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as the emergence of many different quasiparticles, including plasmons, polaritons, trions and excitons with large, tunable binding energies that all can be controlled and modulated through electrical means has given rise to many device applications. In addition, these materials exhibit both room-temperature spin and valley polarization, magnetism, superconductivity, piezoelectricity that are intricately dependent on the composition, crystal structure, stacking, twist angle, layer number and phases of these materials. Initial results on graphene exfoliated from single bulk crystals motivated the development of wide-area, high purity synthesis and heterojunctions with atomically clean interfaces. Now by opening this design space to new synthetic two-dimensional materials &#34;beyond graphene&#34;, it is possible to explore uncharted opportunities in designing novel heterostructures for electrical tunable devices. To fully reveal the emerging functionalities and opportunities of these atomically thin materials in practical applications, this review highlights several representative and noteworthy research directions in the use of electrical means to tune these aforementioned physical and structural properties, with an emphasis on discussing major applications of beyond graphene 2D materials in tunable devices in the past few years and an outlook of what is to come in the next decade.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direct Visualisation of Out-of-Equilibrium Structural Transformations in Atomically-Thin Chalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of sustained research interest due to their extraordinary electronic and optical properties. They also exhibit a wide range of structural phases because of the different orientations that the atoms can have within a single layer, or due to the ways that different layers can stack. Here we report the first study of direct-visualization of structural transformations in atomically-thin layers under highly non-equilibrium thermodynamic conditions. We probe these transformations at the atomic scale using real-time, aberration corrected scanning transmission electron microscopy and observe strong dependence of the resulting structures and phases on both heating rate and temperature. A fast heating rate (25 C/sec) yields highly ordered crystalline hexagonal islands of sizes of less than 20 nm which are composed of a mixture of 2H and 3R phases. However, a slow heating rate (25 C/min) yields nanocrystalline and sub-stoichiometric amorphous regions. These differences are explained by different rates of sulfur evaporation and redeposition. The use of non-equilibrium heating rates to achieve highly crystalline and quantum-confined features from 2D atomic layers present a new route to synthesize atomically-thin, laterally confined nanostrucutres and opens new avenues for investigating fundamental electronic phenomena in confined dimensions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of &#39;all-2D&#39; vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Hybrid Exciton-Plasmon-Polaritons in van der Waals Semiconductor Gratings

Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured multilayer transition metal dichalcogenides by themselves provide an ideal platform for excitation and control of excitonic modes, paving the way to exciton-photonics. Hence, we show that by patterning the TMDCs into nanoresonators, strong dispersion and avoided crossing of excitons and hybrid polaritons with interaction potentials exceeding 410 meV may be controlled with great precision. We further observe that inherently strong TMDC exciton absorption resonances may be completely suppressed due to excitation of hybrid photon states and their interference. Our work paves the way to a next generation of integrated exciton optoelectronic nano-devices and applications in light generation, computing, and sensing.

0 citations0 reviewsNo code linkedOpen access