BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Supriya Chakraborty

Supriya Chakraborty appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-sciCryptography and SecurityEmerging TechnologiesHardware Architecture

Catalog footprint

What is connected

3works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2020arXiv

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX) layer of good quality crystalline Germanium oxide with thickness around 0.62 micron. The crystalline BOX layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy, cross-sectional HRTEM with SAED and EDS established that the top Ge layer was recrystallized during annealing with faceted crystallites. The top layer has a small tensile strain of around +0.4\% and has estimated dislocation density of 2.7 x 10^{7}cm^{-2}. The thickness, crystallinity and electrical characteristics of the top layer and the quality of the BOX layer of GeO_{2} are such that it can be utilized for device fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Investigation of Data Deletion Vulnerabilities in NAND Flash Memory Based Storage

Semiconductor NAND Flash based memory technology dominates the electronic Non-Volatile storage media market. Though NAND Flash offers superior performance and reliability over conventional magnetic HDDs, yet it suffers from certain data-security vulnerabilities. Such vulnerabilities can expose sensitive information stored on the media to security risks. It is thus necessary to study in detail the fundamental reasons behind data-security vulnerabilities of NAND Flash for use in critical applications. In this paper, the problem of unreliable data-deletion/sanitization in commercial NAND Flash media is investigated along with the fundamental reasons leading to such vulnerabilities. Exhaustive software based data recovery experiments (multiple iterations) has been carried out on commercial NAND Flash storage media (8 GB and 16 GB) for different types of filesystems (NTFS and FAT) and OS specific delete/Erase instructions. 100 % data recovery is obtained for windows and linux based delete/Erase commands. Inverse effect of performance enhancement techniques like wear levelling, bad block management etc. is also observed with the help of software based recovery experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unified Characterization Platform for Emerging NVM Technology: Neural Network Application Benchmarking Using off-the-shelf NVM Chips

In this paper, we present a unified FPGA based electrical test-bench for characterizing different emerging NonVolatile Memory (NVM) chips. In particular, we present detailed electrical characterization and benchmarking of multiple commercially available, off-the-shelf, NVM chips viz.: MRAM, FeRAM, CBRAM, and ReRAM. We investigate important NVM parameters such as: (i) current consumption patterns, (ii) endurance, and (iii) error characterization. The proposed FPGA based testbench is then utilized for a Proof-of-Concept (PoC) Neural Network (NN) image classification application. Four emerging NVM chips are benchmarked against standard SRAM and Flash technology for the AI application as active weight memory during inference mode.

0 citations0 reviewsNo code linkedOpen access