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Researcher profile

Sunil Patil

Sunil Patil contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.atm-clusquant-ph

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Published work

3 published item(s)

preprint2011arXiv

Dual top gated graphene transistor in the quantum Hall regime

We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport measurements at low temperature and in the presence of magnetic field show various integer and fractionally quantized conductance plateaus. We explain these results based on the mixing of the edge channels and find that inhomogeneity plays an important role in defining the exact quantization of these plateaus, an issue critical for the metrology applications of \emph{p-n} junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Multiband Hamiltonians of the Luttinger-Kohn Theory and Ellipticity Requirements

Modern applications require a robust and theoretically strong tool for the realistic modeling of electronic states in low dimensional nanostructures. The $k \cdot p$ theory has fruitfully served this role for the long time since its creation. During last two decades several problems have been detected in connection with the application of the $k \cdot p$ approach to such nanostructures. These problems are closely related to the violation of the ellipticity conditions for the underlying system, the fact that until recently has been largely overlooked. We demonstrate that in many cases the models derived by a formal application of the Luttinger-Kohn theory fail to satisfy the ellipticity requirements. The detailed analysis, presented here on an example of the $6 \times 6$ Hamiltonians, shows that this failure has a strong impact on the physically important properties conventionally studied with these models.

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preprint2010arXiv

Tuning mechanical modes and influence of charge screening in nanowire resonators

We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of the resonant frequency with DC gate voltage (VgDC). The effect of electronic screening on the properties of the resonator can be seen in the amplitude. We observe the mixing of mechanical modes with VgDC. We also experimentally probe and quantitatively explain the hysteretic non-linear properties, as a function of VgDC, of the resonator using the Duffing equation.

0 citations0 reviewsNo code linkedOpen access