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Researcher profile

Ajay K. Bhat

Ajay K. Bhat contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2013arXiv

Tunable Superlattice in Graphene To Control the Number of Dirac Points

Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band structure of graphene leading to the emergence of new Dirac cones. This controlled modification of the band structure persists up to 100 K.

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preprint2011arXiv

Dual top gated graphene transistor in the quantum Hall regime

We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport measurements at low temperature and in the presence of magnetic field show various integer and fractionally quantized conductance plateaus. We explain these results based on the mixing of the edge channels and find that inhomogeneity plays an important role in defining the exact quantization of these plateaus, an issue critical for the metrology applications of \emph{p-n} junctions.

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preprint2011arXiv

Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric

We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent) of our devices induced by gate voltage when the system is in the insulating phase. The response is reversible and hysteretic, and the area of hysteresis loop becomes larger as the rate of gate sweep is slowed down. A phase lag exists between the response of the conductance and the gate voltage. This indicates the existence of a memory of the system and we discuss its possible origins.

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