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Researcher profile

Sungjae Cho

Sungjae Cho contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

6 published item(s)

preprint2021arXiv

Dirac-Source Diode with Sub-unity Ideality Factor

An increase in power consumption necessitates a low-power circuit technology to extend Moore&#39;s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (n) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky diode, n<1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (100000). The realisation of a DS Schottky diode paves the way for the development of low-power electronic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature

We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature. Spin-sensitive electrical measurements unveil full spin-polarization reversal by an applied gate voltage. The observed gate-tunable charge-to-spin conversion is explained by the ideal work function mismatch between 2H-TaS2 and graphene, which allows strong interface-induced Bychkov-Rashba interaction with a spin-gap reaching 70 meV, while keeping the Dirac nature of the spectrum intact across electron and hole sectors. The reversible electrical generation and control of the nonequilibrium spin polarization vector, not previously observed in a nonmagnetic material, are elegant manifestations of emergent 2D Dirac fermions with robust spin-helical structure. Our experimental findings, supported by first-principles relativistic electronic structure and transport calculations, demonstrate a route to design low-power spin-logic circuits from layered materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Thickness-Controlled Black Phosphorus Tunnel Field-Effect Transistor for Low Power Switches

The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore&#39;s law reaching its limits, the development of alternative transistor architectures is urgently needed. Transistors require a switching voltage of at least 60 mV for each tenfold increase in current, that is, a subthreshold swing (SS) of 60 mV per decade (dec). Alternative tunnel field-effect transistors (TFETs) are widely studied to achieve a sub-thermionic SS and high I60 (the current where SS becomes 60 mV/dec). Heterojunction (HJ) TFETs show promise for delivering a high I60, but experimental results do not meet theoretical expectations due to interface problems in the HJs constructed from different materials. Here, we report a natural HJ-TFET with spatially varying layer thickness in black phosphorus without interface problems. We achieved record-low average SS values over 4-5 dec of current (SSave_4dec = ~22.9 mV/dec and SSave_5dec = ~26.0 mV/dec) with record-high I60 (I60 = 0.65-1 uA/um), paving the way for application in low-power switches.

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preprint2012arXiv

Insulating behavior in ultra-thin bismuth selenide field effect transistors

Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type, and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.

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preprint2012arXiv

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate the most fundamental signature of the STI: ambipolar metallic electronic transport in the topological surface of an insulating bulk. Here we show that the surfaces of thin (<10 nm), low-doped Bi2Se3 (\approx10^17/cm3) crystals are strongly electrostatically coupled, and a gate electrode can completely remove bulk charge carriers and bring both surfaces through the Dirac point simultaneously. We observe clear surface band conduction with linear Hall resistivity and well-defined ambipolar field effect, as well as a charge-inhomogeneous minimum conductivity region. A theory of charge disorder in a Dirac band explains well both the magnitude and the variation with disorder strength of the minimum conductivity (2 to 5 e^2/h per surface) and the residual (puddle) carrier density (0.4 x 10^12 cm^-2 to 4 x 10^12 cm^-2). From the measured carrier mobilities 320 cm^2/Vs to 1,500 cm^2/Vs, the charged impurity densities 0.5 x 10^13 cm^-2 to 2.3 x 10^13 cm^-2 are inferred. They are of a similar magnitude to the measured doping levels at zero gate voltage (1 x 10^13 cm^-2 to 3 x 10^13 cm^-2), identifying dopants as the charged impurities.

0 citations0 reviewsNo code linkedOpen access