Source author record

Sung Wng Kim

Sung Wng Kim appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con cond-mat.str-el physics.comp-ph

Catalog footprint

What is connected

6works

5topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2022arXiv

First principle investigations of the structural, electronic, and phase stability in 2D layered ZnSb

Recently, the two dimensional (2D) materials have become a potential candidates for various technological applications in spintronics and optoelectronics. In the present study, the structural, electronic, and phase stability of 2D layered ZnSb compounds of four different phases viz. wurzite(w), tetragonal (t), hexagonal (h), and orthorhombic (o) have been tuned using the first principle calculations based on density functional theory (DFT). We invoked the Perdew-Burke-Ernzerhof (PBE) functional and the projected augmented wave (PAW) method during all the calculations. Based on our numerical results, we predicted the novel tetragonal phase as stable phase of ZnSb next to existing orthorhombic structure. We reported the pressure induced phase transition between orthorhombic to tetragonal phase at 12.48 GPa/atom. The projected density of states indicates the strong p-d hybridization between Sb-5p and Zn-3d states confirming the nature of strong covalent bonding between them. The electronic band structures suggest that t-ZnSb, w-ZnSb, and h-ZnSb are metallic in nature whereas o-ZnSb is semiconducting with narrow band gap of 0.03 eV using PBE. We predicted the possibility of extracting the two dimensional (2D) monolayer sheet in t-ZnSb and o-ZnSb according to the exfoliation energy criterion. In addition, the 2D monolayer (ML) of o-ZnSb has been predicted to be dynamically stable but that of t-ZnSb is not stable as manifested in phonon dispersion bands. Surprisingly, the semiconducting band gap nature of o-ZnSb changes from indirect and narrow to direct and sizable while going from 3D bulk to 2D ML structure. Further, we estimated the value of work functions for the surfaces of t-ZnSb and o-ZnSb as 4.61 eV and 4.04 eV respectively. Such materials can find the niche applications in next generation electronic devices utilizing 2D hetero-structures.

preprint2021arXiv

Reshaped Weyl fermionic dispersions driven by Coulomb interactions in MoTe2

We report the direct evidence of impacts of the Coulomb interaction in a prototypical Weyl semimetal, MoTe2, that alter its bare bands in a wide range of energy and momentum. Our quasiparticle interference patterns measured using scanning tunneling microscopy are shown to match the joint density of states of quasiparticle energy bands including momentum-dependent self-energy corrections, while electronic energy bands based on the other simpler local approximations of the Coulomb interaction fail to explain neither the correct number of quasiparticle pockets nor shape of their dispersions observed in our spectrum. With this, we predict a transition between type-I and type-II Weyl fermions with doping and resolve its disparate quantum oscillation experiments, thus highlighting the critical roles of Coulomb interactions in layered Weyl semimetals.

preprint2016arXiv

Phase transitions via selective elemental vacancy engineering in complex oxide thin films

Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, oxygen vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling oxygen vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structure of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and oxygen vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, oxygen vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.

preprint2016arXiv

Stacking-sequence-independent band structure and shear exfoliation of two-dimensional electride materials

The electronic band structure of crystals is generally influenced by the periodic arrangement of their constituent atoms. Specifically, the emerging two-dimensional (2D) layered structures have shown different band structures with respect to their stacking configurations. Here, based on first-principles density-functional theory calculations, we demonstrate that the band structure of the recently synthesized 2D Ca$_2$N electride changes little for the stacking sequence as well as the lateral interlayer shift. This intriguing invariance of band structure with respect to geometrical variations can be attributed to a complete screening of [Ca$_2$N]$^{+}$ cationic layers by anionic excess electrons delocalized between the cationic layers. The resulting weak interactions between 2D dressed cationic layers give rise to not only a shallow potential barrier for bilayer sliding but also an electron-doping facilitated shear exfoliation. Our findings open a route for exploration of the peculiar geometry-insensitive electronic properties in 2D electride materials, which will be useful for future thermally stable electronic applications.

preprint2014arXiv

Superconductivity of Ca2InN with a layered structure embedding an anionic indium chain array

We report the emergence of superconductivity in Ca2InN consisting of a 2-dimensional (2D) array of zigzag indium chains embedded between Ca2N layers. A sudden drop of resistivity and a specific-heat (Cp) jump attributed to the superconducting transition were observed at 0.6 K. The Sommerfeld coefficient γ= 4.24 mJ/mol K2 and Debye temperature ΘD = 322 K were determined from the Cp of the normal conducting state and the superconducting volume fraction was estimated to be ~80% from the Cp jump, assuming a BCS-type weak coupling. Density functional theory calculations demonstrated that the electronic bands near the Fermi level (EF) are mainly derived from In 5p orbitals with π and σ bonding states and the Fermi surface is composed of cylindrical parts, corresponding to the quasi-2D electronic state of the In chain array. By integrating the projected density of states of In-p component up to EF, a valence electron population of ~1.6 electrons/In was calculated, indicating that the partially anionic state of In. The In 3d binding energies observed in Ca2InN by x-ray photoemission spectroscopy were negatively shifted from that in In metal. The superconductivity of Ca2InN is associated with the p-p bonding states of the anionic In layer.

preprint2012arXiv

Two-dome structure in electron-doped iron arsenide superconductors

Iron arsenide superconductors based on the material LaFeAsO1-xFx are characterized by a two-dimensional Fermi surface (FS) consisting of hole and electron pockets yielding structural and antiferromagnetic transitions at x = 0. Electron doping by substituting O2- with F- suppresses these transitions and gives rise to superconductivity with a maximum Tc = 26 K at x = 0.1. However, the over-doped region cannot be accessed due to the poor solubility of F- above x = 0.2. Here we overcome this problem by doping LaFeAsO with hydrogen. We report the phase diagram of LaFeAsO1-xHx (x < 0.53) and, in addition to the conventional superconducting dome seen in LaFeAsO1-xFx, we find a second dome in the range 0.21 < x < 0.53, with a maximum Tc of 36 K at x = 0.3. Density functional theory calculations reveal that the three Fe 3d bands (xy, yz, zx) become degenerate at x = 0.36, whereas the FS nesting is weakened monotonically with x. These results imply that the band degeneracy has an important role to induce high Tc.