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Sumeet Kumar Gupta

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Hardware Architecture Machine Learning Computer Vision cond-mat.mes-hall Emerging Technologies

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preprint2022arXiv

FlatENN: Train Flat for Enhanced Fault Tolerance of Quantized Deep Neural Networks

Model compression via quantization and sparsity enhancement has gained an immense interest to enable the deployment of deep neural networks (DNNs) in resource-constrained edge environments. Although these techniques have shown promising results in reducing the energy, latency and memory requirements of the DNNs, their performance in non-ideal real-world settings (such as in the presence of hardware faults) is yet to be completely understood. In this paper, we investigate the impact of bit-flip and stuck-at faults on activation-sparse quantized DNNs (QDNNs). We show that a high level of activation sparsity comes at the cost of larger vulnerability to faults. For instance, activation-sparse QDNNs exhibit up to 17.32% lower accuracy than the standard QDNNs. We also establish that one of the major cause of the degraded accuracy is sharper minima in the loss landscape for activation-sparse QDNNs, which makes them more sensitive to perturbations in the weight values due to faults. Based on this observation, we propose the mitigation of the impact of faults by employing a sharpness-aware quantization (SAQ) training scheme. The activation-sparse and standard QDNNs trained with SAQ have up to 36.71% and 24.76% higher inference accuracy, respectively compared to their conventionally trained equivalents. Moreover, we show that SAQ-trained activation-sparse QDNNs show better accuracy in faulty settings than standard QDNNs trained conventionally. Thus the proposed technique can be instrumental in achieving sparsity-related energy/latency benefits without compromising on fault tolerance.

preprint2020arXiv

TiM-DNN: Ternary in-Memory accelerator for Deep Neural Networks

The use of lower precision has emerged as a popular technique to optimize the compute and storage requirements of complex Deep Neural Networks (DNNs). In the quest for lower precision, recent studies have shown that ternary DNNs (which represent weights and activations by signed ternary values) represent a promising sweet spot, achieving accuracy close to full-precision networks on complex tasks. We propose TiM-DNN, a programmable in-memory accelerator that is specifically designed to execute ternary DNNs. TiM-DNN supports various ternary representations including unweighted {-1,0,1}, symmetric weighted {-a,0,a}, and asymmetric weighted {-a,0,b} ternary systems. The building blocks of TiM-DNN are TiM tiles -- specialized memory arrays that perform massively parallel signed ternary vector-matrix multiplications with a single access. TiM tiles are in turn composed of Ternary Processing Cells (TPCs), bit-cells that function as both ternary storage units and signed ternary multiplication units. We evaluate an implementation of TiM-DNN in 32nm technology using an architectural simulator calibrated with SPICE simulations and RTL synthesis. We evaluate TiM-DNN across a suite of state-of-the-art DNN benchmarks including both deep convolutional and recurrent neural networks. A 32-tile instance of TiM-DNN achieves a peak performance of 114 TOPs/s, consumes 0.9W power, and occupies 1.96mm2 chip area, representing a 300X and 388X improvement in TOPS/W and TOPS/mm2, respectively, compared to an NVIDIA Tesla V100 GPU. In comparison to specialized DNN accelerators, TiM-DNN achieves 55X-240X and 160X-291X improvement in TOPS/W and TOPS/mm2, respectively. Finally, when compared to a well-optimized near-memory accelerator for ternary DNNs, TiM-DNN demonstrates 3.9x-4.7x improvement in system-level energy and 3.2x-4.2x speedup, underscoring the potential of in-memory computing for ternary DNNs.

preprint2010arXiv

Compact Modeling of Parasitic Internal Fringe Capacitance Effects on the Threshold Voltage of High-K Gate Dielectric Nanoscale SOI MOSFETs

A compact model for the effect of parasitic internal fringe capacitance on threshold voltage in high-K gate dielectric SOI MOSFETs is developed. Our model includes the effects of the gate dielectric permittivity, spacer oxide permittivity, spacer width, gate length and width of MOS structure. A simple expression for parasitic internal fringe capacitance from the bottom edge of the gate electrode is obtained and the charges induced in the source and drain regions due to this capacitance are considered. We demonstrate an increase in surface potential along the channel due to these charges resulting in a decrease in the threshold voltage with increase in gate dielectric permittivity. The accuracy of the results obtained using our analytical model is verified using 2-D device simulations.