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Sudip Malick

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cond-mat.str-el

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2 publications

preprint2022arXiv

Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl2_2Si2_2

We explore the electronic and topological properties of single crystal SrAl2_2Si2_2 using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced peak near 50 K. We observe several remarkable features at low temperatures, such as large non-saturating magnetoresistance, Shubnikov-de Haas oscillations and cusp-like magneto-conductivity. The maximum value of magnetoresistance turns out to be 459\% at 2 K and 12 T. The analysis of the cusp-like feature in magneto-conductivity indicates a clear signature of weak anti-localization. Our Hall resistivity measurements confirm the presence of two types of charge carriers in SrAl2_2Si2_2, with low carrier density.

Open access
preprint2022arXiv

Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs

The effect of 50\% Cu doping at the Au site in the topological Dirac semimetal CaAuAs is investigated through electronic band structure calculations, electrical resistivity, and magnetotransport measurements. Electronic structure calculations a suggest broken-symmetry-driven topological phase transition from the Dirac to triple-point state in CaAuAs via alloy engineering. The electrical resistivity of both the CaAuAs and CaAu0.5_{0.5}Cu0.5_{0.5}As compounds shows metallic behavior. Nonsaturating quasilinear magnetoresistance (MR) behavior is observed in CaAuAs. On the other hand, MR of the doped compound shows a pronounced cusplike feature in the low-field regime. Such behavior of MR in CaAu0.5_{0.5}Cu0.5_{0.5}As is attributed to the weak antilocalization (WAL) effect. The WAL effect is analyzed using different theoretical models, including the semiclassical ∼B\sim\sqrt{B} one which accounts for the three-dimensional WAL and modified Hikami-Larkin-Nagaoka model. Strong WAL effect is also observed in the longitudinal MR, which is well described by the generalized Altshuler-Aronov model. Our study suggests that the WAL effect originates from weak disorder and the spin-orbit coupled bulk state. Interestingly, we have also observed the signature of chiral anomaly in longitudinal MR, when both current and field are applied along the cc axis. The Hall resistivity measurements indicate that the charge conduction mechanism in these compounds is dominated by the holes with a concentration ∼\sim1020^{20} cm−3^{-3} and mobility ∼102\sim 10^2 cm2^2 V−1^{-1} S−1^{-1}.

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