BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Sudhansu Sekhar Das

Sudhansu Sekhar Das contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

Trust snapshot

Quick read

Trust 17 - Baseline
4works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2026arXiv

Effect of Number of Bilayers on the Anomalous Hall Effect in [Si/Fe]N Multilayers

The influence of varying the number of bilayers (N) on the anomalous Hall effect (AHE) in sputtered Si/Fe multilayers has been investigated. Both the AHE and magnetisation data reveal the in-plane magnetic anisotropy in the samples. Large enhancement of about 24 times in the saturation anomalous Hall resistance (R_Ahs) and anomalous Hall sensitivity (S) has been observed upon decreasing N from 20 to 1. When compared with the bulk Fe, the values of R_Ahs and anomalous Hall coefficient, Rs obtained for N= 1 were enhanced by about 5 and 3 orders of magnitude, respectively. The Rs follows the longitudinal electrical resistivity Rho as Rs proportional to Rho^2.1, suggesting side jump as the dominant mechanism of the AHE. The S as high as 22 Ohm/T over a wide operational field range of -8 to +8 kOe has been obtained for N = 1.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Magnetization and anomalous Hall effect in SiO2/Fe/SiO2 trilayers

SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with (110) texture and that the two SiO2 layers are amorphous. Magnetic measurements performed with the applied field in in-plane and perpendicular direction to the film plane confirmed that the samples are soft ferromagnetic having strong in-plane magnetic anisotropy. The temperature dependence of magnetization shows complex behavior with the coexistence of both ferromagnetic and superparamagnetic properties. The transport properties of the samples as studied through Hall effect measurements show anomalous Hall effect (AHE). An enhancement of about 14 times in the saturation anomalous Hall resistance (R_Ahs) was observed upon reducing the t_Fe from 300 to 50 Angstrom. The maximum value of R_Ahs = 2.3 Ohm observed for tFe = 50 Angstrom sample is about 4 orders of magnitude larger than that reported for bulk Fe. When compared with the single Fe film, a maximum increase of about 56% in the R_Ahs was observed in sandwiched Fe (50 Angstrom) film. Scaling law suggests that the R_s follows the longitudinal resistivity (Rho) as, R_s proportional to (Rho)^1.9, suggesting side jump as the dominant mechanism of the AHE. A maximum enhancement of about 156% in the sensitivity S was observed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Positive versus negative resistance response to hydrogenation in palladium and its alloys

Resistive solid state sensors are widely used in multiple applications, including molecular and gas detection. Absorption or intercalation of the target species varies the lattice parameters and an effective thickness of thin films, which is usually neglected in analyzing their transport properties in general and the sensor response in particular. Here, we explore the case of palladium-based thin films absorbing hydrogen and demonstrate that expansion of thickness is an important mechanism determining the magnitude and the very polarity of the resistance response to hydrogenation in high resistivity films. The model of the resistance response that takes into account modifications of thickness was tested and confirmed in three Pd-based systems with variable resistivity: thin Pd films above and below the percolation threshold, thick Pd-SiO2 granular composite films with different content of silica, and Pd-rich CoPd alloys where resistivity depends on Co concentration. Superposition of the bulk resistivity increase due to hydride formation and decrease of film resistance due to thickness expansion provides a consistent explanation of the hydrogenation response in both continuous and discontinuous films with different structures and compositions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Study of magnetic interface and its effect in Fe/NiFe bilayers of alternating order

We present a comprehensive study on the magnetization reversal in Fe/NiFe bilayer system by alternating the order of the magnetic layers. All the samples show growth-induced uniaxial magnetic anisotropy due to oblique angle deposition technique. Strong interfacial exchange coupling between the Fe and NiFe layers leads to the single-phase hysteresis loops in the bilayer system. The strength of coupling being dependent on the interface changes upon alternating the order of magnetic layers. The magnetic parameters such as coercivity HC, and anisotropy field HK become almost doubled when NiFe layer is grown over the Fe layers. This enhancement in the magnetic parameters is primarily dependent on the increase of the thickness and magnetic moment of Fe-NiFe interfacial layer as revealed from the polarized neutron reectivity (PNR) data of the bilayer samples. The difference in the thickness and magnetization of the Fe-NiFe interfacial layer indicates the modification of the microstructure by alternating the order of the magnetic layers of the bilayers. The interfacial magnetic moment increased by almost 18 % when NiFe layer is grown over the Fe layer. In spite of the different values of anisotropy fields and modified interfacial exchange coupling, the Gilbert damping constant values of the ferromagnetic bilayers remain similar to single NiFe layer.

0 citations0 reviewsNo code linkedOpen access