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Researcher profile

Sucismita Chutia

Sucismita Chutia contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2008arXiv

Multiscale theory of valley splitting

The coupling between $z$ valleys in the conduction band of a Si quantum well arises from phenomena occurring within several atoms from the interface, thus ruling out a theoretical description based on pure effective mass theory. However, the complexity and size of a realistic device precludes an analytical atomistic description. Here, we develop a fully analytical multiscale theory of valley coupling, by combining effective mass and tight binding approaches. The results are of particular interest for silicon qubits and quantum devices, but also provide insight for GaAs quantum wells.

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preprint2007arXiv

Valley Kondo Effect in Silicon Quantum Dots

Recent progress in the fabrication of quantum dots using silicon opens the prospect of observing the Kondo effect associated with the valley degree of freedom. We compute the dot density of states using an Anderson model with infinite Coulomb interaction $U$, whose structure mimics the nonlinear conductance through a dot. The density of states is obtained as a function of temperature and applied magnetic field in the Kondo regime using an equation-of-motion approach. We show that there is a very complex peak structure near the Fermi energy, with several signatures that distinguish this spin-valley Kondo effect from the usual spin Kondo effect seen in GaAs dots. We also show that the valley index is generally not conserved when electrons tunnel into a silicon dot, though the extent of this non-conservation is expected to be sample-dependent. We identify features of the conductance that should enable experimenters to understand the interplay of Zeeman splitting and valley splitting, as well as the dependence of tunneling on the valley degree of freedom.

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preprint2006arXiv

Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells

We present an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter, $v_v$, which encapsulates the physics of the quantum well interface. The new effective mass parameter is computed by means of a tight binding theory. The resulting formalism provides rather simple analytical results for several geometries of interest, including a finite square well, a quantum well in an electric field, and a modulation doped two-dimensional electron gas. Of particular importance is the problem of a quantum well in a magnetic field, grown on a miscut substrate. The latter may pose a numerical challenge for atomistic techniques like tight-binding, because of its two-dimensional nature. In the effective mass theory, however, the results are straightforward and analytical. We compare our effective mass results with those of the tight binding theory, obtaining excellent agreement.

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