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Mark Friesen

Mark Friesen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.supr-concond-mat.otherphysics.soc-ph

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Published work

64 published item(s)

preprint2023arXiv

Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration

We show that Ge concentration oscillations within the quantum well region of a Si/SiGe heterostructure can significantly enhance the spin-orbit coupling of the low-energy conduction-band valleys. Specifically, we find that for Ge oscillation wavelengths near $λ= 1.57~\text{nm}$ with an average Ge concentration of $\bar{n}_{\text{Ge}} = 5\%$ in the quantum well region, a Dresselhaus spin-orbit coupling is induced, at all physically relevant electric field strengths, which is over an order of magnitude larger than what is found in conventional Si/SiGe heterostructures without Ge concentration oscillations. This enhancement is caused by the Ge concentration oscillations producing wave-function satellite peaks a distance $2 π/λ$ away in momentum space from each valley, which then couple to the opposite valley through Dresselhaus spin-orbit coupling. Our results indicate that the enhanced spin-orbit coupling can enable fast spin manipulation within Si quantum dots using electric dipole spin resonance in the absence of micromagnets. Indeed, our calculations yield a Rabi frequency $Ω_{\text{Rabi}}/B > 500~\text{MHz/T}$ near the optimal Ge oscillation wavelength $λ= 1.57~\text{nm}$.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

How valley-orbit states in silicon quantum dots probe quantum well interfaces

The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Charge-noise resilience of two-electron quantum dots in Si/SiGe heterostructures

The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we show that both of these triplets are present in the typical operating regime, but that only the valley-excited triplet offers intrinsic protection against charge noise. We further show that this protection arises naturally in dots with stronger confinement. These results reveal an inherent advantage for silicon-based multi-electron qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-Fidelity Entangling Gates for Quantum-Dot Hybrid Qubits Based on Exchange Interactions

Quantum dot hybrid qubits exploit an extended charge-noise sweet spot that suppresses dephasing and has enabled the experimental achievement of high-fidelity single-qubit gates. However, current proposals for two-qubit gates require tuning the qubits away from their sweet spots. Here, we propose a two-hybrid-qubit coupling scheme, based on exchange interactions, that allows the qubits to remain at their sweet spots at all times. The interaction is controlled via the inter-qubit tunnel coupling. By simulating such gates in the presence of realistic quasistatic and $1\!/\!f$ charge noise, we show that our scheme should enable controlled-$Z$ gates of length $\sim$5~ns, and Z-CNOT gates of length $\sim$7~ns, both with fidelities $>$99.9\%.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Progress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe

Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $π$-rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Realization of a $CQ_3$ Qubit: energy spectroscopy and coherence

The energy landscape of a single electron in a triple quantum dot can be tuned such that the energy separation between ground and excited states becomes a flat function of the relevant gate voltages. These so-called sweet spots are beneficial for charge coherence, since the decoherence effects caused by small fluctuations of gate voltages or surrounding charge fluctuators are minimized. We propose a new operation point for a triple quantum dot charge qubit, a so-called $CQ_3$-qubit, having a third order sweet spot. We show strong coupling of the qubit to single photons in a frequency tunable high-impedance SQUID-array resonator. In the dispersive regime we investigate the qubit linewidth in the vicinity of the proposed operating point. In contrast to the expectation for a higher order sweet spot, we there find a local maximum of the linewidth. We find that this is due to a non-negligible contribution of noise on the quadrupolar detuning axis not being in a sweet spot at the proposed operating point. While the original motivation to realize a low-decoherence charge qubit was not fulfilled, our analysis provides insights into charge decoherence mechanisms relevant also for other qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Majorana bound states in nanowire-superconductor hybrid systems in periodic magnetic fields

We study how the shape of a periodic magnetic field affects the presence of Majorana bound states (MBS) in a nanowire-superconductor system. Motivated by the field configurations that can be produced by an array of nanomagnets, we consider spiral fields with an elliptic cross-section and fields with two sinusoidal components. We show that MBS are robust to imperfect helical magnetic fields. In particular, if the amplitude of one component is tuned to the value determined by the superconducting order parameter in the wire, the MBS can exist even if the second component has a much smaller amplitude. We also explore the effect of the chemical potential on the phase diagram. Our analysis is both numerical and analytical, with good agreement between the two methods.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Measurements of capacitive coupling within a quadruple quantum dot array

We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract all the parameters in the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot charge stability diagram. We also investigate the tunability of the capacitive coupling energy, using inter-dot barrier gate voltages to tune the inter- and intra-double dot capacitances, and change the capacitive coupling energy of the double dots over a range of 15-32 GHz. We provide a model for the capacitive coupling energy based on the electrostatics of a network of charge nodes joined by capacitors, which shows how the coupling energy should depend on inter-double dot and intra-double dot capacitances in the network, and find that the expected trends agree well with the measurements of coupling energy.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Repetitive quantum non-demolition measurement and soft decoding of a silicon spin qubit

Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logical qubit and the other serving as the ancilla. Making use of a two-qubit controlled-rotation gate, the state of the logical qubit is mapped onto the ancilla, followed by a destructive readout of the ancilla. Repeating this procedure enhances the logical readout fidelity from $75.5\pm 0.3\%$ to $94.5 \pm 0.2\%$ after 15 ancilla readouts. In addition, we compare the conventional thresholding method with an improved signal processing method called soft decoding that makes use of analog information in the readout signal to better estimate the state of the logical qubit. We demonstrate that soft decoding leads to a significant reduction in the required number of repetitions when the readout errors become limited by Gaussian noise, for instance in the case of readouts with a low signal-to-noise ratio. These results pave the way for the implementation of quantum error correction with spin qubits in silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet

The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of $\approx$ 99$\%$ using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in substrate. The coherence time measured using dynamical decoupling extends up to $\approx$ 400 $μ$s for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10 kHz $-$ 1 MHz range, possibly because charge noise affecting the spin via the micromagnet gradient. This work shows that an electron spin in a Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between double quantum dots by measuring the detuning energy shift ($\approx$ 75 $μ$eV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast conditional Landau-Zener-Stuckelberg interferences with conditonal $π$ phase flip time about 80 ps, showing promising pathways toward multi-qubit entanglement control in semiconductor quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane

We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Characterizing gate operations near the sweet spot of an exchange-only qubit

Optimal working points or "sweet spots" have arisen as an important tool for mitigating charge noise in quantum dot logical spin qubits. The exchange-only qubit provides an ideal system for studying this effect because $Z$ rotations are performed directly at the sweet spot, while $X$ rotations are not. Here for the first time we quantify the ability of the sweet spot to mitigate charge noise by treating $X$ and $Z$ rotations on an equal footing. Specifically, we optimize $X$ rotations and determine an upper bound on their fidelity. We find that sweet spots offer a fidelity improvement factor of at least 20 for typical GaAs devices, and more for Si devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High fidelity resonant gating of a silicon based quantum dot hybrid qubit

Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its weak spin-orbit coupling and hyperfine interaction, and several architectures based on gate defined quantum dots have been proposed and demonstrated experimentally. Recently, a quantum dot hybrid qubit formed by three electrons in double quantum dot was proposed, and non-adiabatic pulsed-gate operation was implemented experimentally, demonstrating simple and fast electrical manipulations of spin states with a promising ratio of coherence time to manipulation time. However, the overall gate fidelity of the pulse-gated hybrid qubit is limited by relatively fast dephasing due to charge noise during one of the two required gate operations. Here we perform the first microwave-driven gate operations of a quantum dot hybrid qubit, avoiding entirely the regime in which it is most sensitive to charge noise. Resonant detuning modulation along with phase control of the microwaves enables a pi rotation time of less than 5 ns (50 ps) around X(Z)-axis with high fidelities > 93 (96) %. We also implement Hahn echo and Carr-Purcell (CP) dynamic decoupling sequences with which we demonstrate a coherence time of over 150 ns. We further discuss a pathway to improve gate fidelity to above 99 %, exceeding the threshold for surface code based quantum error correction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High Fidelity Singlet-Triplet ${S}$-${T_-}$ Qubits in Inhomogeneous Magnetic Fields

We propose an optimal set of quantum gates for a singlet-triplet qubit in a double quantum dot with two electrons utilizing the $S$-$T_-$ subspace. Qubit rotations are driven by the applied magnetic field and an orthogonal field gradient provided by a micromagnet. We optimize the fidelity of this qubit as a function of magnetic fields, taking advantage of "sweet spots" where the rotation frequencies are independent of the energy level detuning, providing protection against charge noise. We simulate gate operations and qubit rotations in the presence of quasistatic noise from charge and nuclear spins as well as leakage to nonqubit states, and predict that in silicon quantum dots gate fidelities greater than $99\%$ can be achieved for two nearly-orthogonal rotation axes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Identifying single electron charge sensor events using wavelet edge detection

The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an alternative method for identifying charge sensor events using wavelet edge detection. The technique is convenient to use and we show that, with realistic signals and a single tunable parameter, wavelet detection can outperform thresholding and is significantly more tolerant to 1/f and low-frequency noise.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through this device enable the determination of the most likely location of the localized state, consistent with an electronically active impurity in the quantum well near the edge of the quantum dot. The experiments we report are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Decoherence of an exchange qubit by hyperfine interaction

We study three-electron-spin decoherence in a semiconductor triple quantum dot with a linear geometry. The three electron spins are coupled by exchange interactions J_{12} and J_{23}, and we clarify inhomogeneous and homogeneous dephasing dynamics for a logical qubit encoded in the (S=1/2,S_{z} =1/2) subspace. We first justify that qubit leakage via the fluctuating Overhauser field can be effectively suppressed by sufficiently large Zeeman and exchange splittings. For J_{12}=J_{23} and the case of J_{12} and J_{23} being different, we construct an effective pure dephasing Hamiltonian with the Zeeman splitting much larger than the exchange splitting. Both effective Hamiltonians have the same order of magnitude as that for a single-spin qubit, and the relevant dephasing time scales are of the same order as those for a single spin. We provide estimates of the dynamics of three-spin free induction decay, the decay of a Hahn spin echo, and the decay of echoes from a CPMG pulse sequence for GaAs quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot

Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally affects the qubit, but still allows qubit control and scalability. Here we demonstrate a long-lived single-electron spin qubit in a Si/SiGe quantum dot with all-electrical two-axis control. The spin is driven by resonant microwave electric fields in a transverse magnetic field gradient from a local micromagnet, and the spin state is read out in single-shot mode. Electron spin resonance occurs at two closely spaced frequencies, which we attribute to two valley states. Thanks to the weak hyperfine coupling in silicon, Ramsey and Hahn echo decay timescales of 1us and 40us, respectively, are observed. This is almost two orders of magnitude longer than the intrinsic timescales in III-V quantum dots, while gate operation times are comparable to those achieved in GaAs. This places the single-qubit rotations in the fault-tolerant regime and strongly raises the prospects of quantum information processing based on quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Microwave-driven coherent operations of a semiconductor quantum dot charge qubit

A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed operation, because of the strong coupling of electric fields to the electron. However, charge noise also couples strongly to this qubit, resulting in rapid dephasing at nearly all operating points, with the exception of one special 'sweet spot'. Fast dc voltage pulses have been used to manipulate semiconductor charge qubits, but these previous experiments did not achieve high-fidelity control, because dc gating requires excursions away from the sweet spot. Here, by using resonant ac microwave driving, we achieve coherent manipulation of a semiconductor charge qubit, demonstrating a Rabi frequency of up to 2GHz, a value approaching the intrinsic qubit frequency of 4.5GHz. Z-axis rotations of the qubit are well-protected at the sweet spot, and by using ac gating, we demonstrate the same protection for rotations about arbitrary axes in the X-Y plane of the qubit Bloch sphere. We characterize operations on the qubit using two independent tomographic approaches: standard process tomography and a newly developed method known as gate set tomography. Both approaches show that this qubit can be operated with process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Further, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins, or the addition of a third quantum dot. Here we demonstrate a new qubit that offers both simplicity - it requires no special preparation and lives in a double quantum dot with no added complexity - and is very fast: we demonstrate full control on the Bloch sphere with $π$-rotation times less than 100 ps in two orthogonal directions. We report full process tomography, extracting high fidelities equal to or greater than 85% for X-rotations and 94% for Z-rotations. We discuss a path forward to fidelities better than the threshold for quantum error correction.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tunneling in Nanoscale Devices

Theoretical treatments of tunneling in electronic devices are often based on one-dimensional (1D) approximations. Here we show that for many nanoscale devices, such as widely studied semiconductor gate-defined quantum dots, 1D approximations yield an incorrect functional dependence on the tunneling parameters (e.g., lead width and barrier length) and an incorrect magnitude for the transport conductance. Remarkably, the physics of tunneling in 2D or 3D also yields transport behavior that appears classical (like Ohm's law), even deep in the quantum regime.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-axis control of a singlet-triplet qubit with an integrated micromagnet

The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micro magnet, the magnetic field difference $ΔB$ between the two sides of the double dot is large enough to enable the achievement of coherent rotation of the qubit's Bloch vector about two different axes of the Bloch sphere. By measuring the decay of the quantum oscillations, the inhomogeneous spin coherence time $T_{2}^{*}$ is determined. By measuring $T_{2}^{*}$ at many different values of the exchange coupling $J$ and at two different values of $ΔB$, we provide evidence that the micromagnet does not limit decoherence, with the dominant limits on $T_{2}^{*}$ arising from charge noise and from coupling to nuclear spins.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coherent Quantum Oscillations in a Silicon Charge Qubit

Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127ps to 760ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Disorder-induced valley-orbit hybrid states in Si quantum dots

Quantum dots in silicon are promising candidates for implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these devices. Here we introduce a novel, systematic effective mass theory of valley-orbit coupling in disordered silicon systems. This theory reveals valley-orbit hybridization effects that are detrimental for storing quantum information in the valley degree of freedom, including non-vanishing dipole matrix elements between valley states and altered intervalley tunneling.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Fast coherent manipulation of three-electron states in a double quantum dot

A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on a system with more electrons per quantum dot, in a double dot with three electrons. We demonstrate that tailored pulse sequences can be used to induce coherent rotations between 3-electron quantum states. Certain pulse sequences yield coherent oscillations with a very high figure of merit (the ratio of coherence time to rotation time) of >100. The presence of the third electron enables very fast rotations to all possible states, in contrast to the case when only two electrons are used, in which some rotations are slow. The minimum oscillation frequency we observe is >5 GHz.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High-fidelity gates in quantum dot spin qubits

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet (ST) and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance (LQR), and a gate-like process known as stimulated Raman adiabatic passage (STIRAP). These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling $g$ and the detuning $ε$, which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity ($f$) for fixed $g$ as a function of the other control parameters; this yields an $f^\text{opt}(g)$ that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound $f^\text{max}$ that is specific to the qubit-gate combination. We show that similar gate fidelities ($ \sim 99.5$%) should be attainable for ST qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields $ΔB$ produced by nuclear spins.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Mediated gates between spin qubits

In a typical quantum circuit, nonlocal quantum gates are applied to nonproximal qubits. If the underlying physical interactions are short-range (e.g., exchange interactions between spins), intermediate swap operations must be introduced, thus increasing the circuit depth. Here we develop a class of "mediated" gates for spin qubits, which act on nonproximal spins via intermediate ancilla qubits. At the end of the operation, the ancillae return to their initial states. We show how these mediated gates can be used (1) to generate arbitrary quantum states and (2) to construct arbitrary quantum gates. We provide some explicit examples of circuits that generate common states [e.g., Bell, Greenberger-Horne-Zeilinger (GHZ), W, and cluster states] and gates (e.g.,square-root-SWAP, SWAP, CNOT, and Toffoli gates). We show that the depths of these circuits are often shorter than those of conventional swap-based circuits. We also provide an explicit experimental proposal for implementing a mediated gate in a triple-quantum-dot system.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Probing Quantum Phase Transitions on a Spin Chain with a Double Quantum Dot

Quantum phase transitions (QPTs) in qubit systems are known to produce singularities in the entanglement, which could in turn be used to probe the QPT. Current proposals to measure the entanglement are challenging however, because of their nonlocal nature. Here we show that a double quantum dot coupled locally to a spin chain provides an alternative and efficient probe of QPTs. We propose an experiment to observe a QPT in a triple dot, based on the well-known singlet projection technique.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Single-qubit gates in two steps with rotation axes in a single plane

Any single-qubit unitary operation or quantum gate can be considered a rotation. Typical experimental implementations of single-qubit gates involve two or three fixed rotation axes, and up to three rotation steps. Here we show that, if the rotation axes can be tuned arbitrarily in a fixed plane, then two rotation steps are sufficient for implementing a single-qubit gate, and one rotation step is sufficient for implementing a state transformation. The results are relevant for "exchange-only" logical qubits encoded in three-spin blocks, which are important for universal quantum computation in decoherence free subsystems and subspaces.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Comparing algorithms for graph isomorphism using discrete- and continuous-time quantum random walks

Berry and Wang [Phys. Rev. A {\bf 83}, 042317 (2011)] show numerically that a discrete-time quantum random walk of two noninteracting particles is able to distinguish some non-isomorphic strongly regular graphs from the same family. Here we analytically demonstrate how it is possible for these walks to distinguish such graphs, while continuous-time quantum walks of two noninteracting particles cannot. We show analytically and numerically that even single-particle discrete-time quantum random walks can distinguish some strongly regular graphs, though not as many as two-particle noninteracting discrete-time walks. Additionally, we demonstrate how, given the same quantum random walk, subtle differences in the graph certificate construction algorithm can nontrivially impact the walk's distinguishing power. We also show that no continuous-time walk of a fixed number of particles can distinguish all strongly regular graphs when used in conjunction with any of the graph certificates we consider. We extend this constraint to discrete-time walks of fixed numbers of noninteracting particles for one kind of graph certificate; it remains an open question as to whether or not this constraint applies to the other graph certificates we consider.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of Randomness on Quantum Data Buses of Heisenberg Spin Chains

A strongly coupled spin chain can mediate long-distance effective couplings or entanglement between remote qubits, and can be used as a quantum data bus. We study how the fidelity of a spin-1/2 Heisenberg chain as a spin bus is affected by static random exchange couplings and magnetic fields. We find that, while non-uniform exchange couplings preserve the isotropy of the qubit effective couplings, they cause the energy levels, the eigenstates, and the magnitude of the couplings to vary locally. On the other hand, random local magnetic fields lead to an avoided level crossing for the bus ground state manifold, and cause the effective qubit couplings to be anisotropic. Interestingly, the total magnetic moment of the ground state of an odd-size bus may not be parallel to the average magnetic field. Its alignment depends on both the direction of the average field and the field distribution, in contrast with the ground state of a single spin which always aligns with the applied magnetic field to minimize the Zeeman energy. Lastly, we calculate sensitivities of the spin bus to such local variations, which are potentially useful for evaluating decoherence when dynamical fluctuations in the exchange coupling or magnetic field are considered.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effective mass theory of monolayer δ-doping in the high-density limit

Monolayer δ-doped structures in silicon have attracted renewed interest with their recent incorporation into atomic-scale device fabrication strategies as source and drain electrodes and in-plane gates. Modeling the physics of δ-doping at this scale proves challenging, however, due to the large computational overhead associated with ab initio and atomistic methods. Here, we develop an analytical theory based on an effective mass approximation. We specifically consider the Si:P materials system, and the limit of high donor density, which has been the subject of recent experiments. In this case, metallic behavior including screening tends to smooth out the local disorder potential associated with random dopant placement. While smooth potentials may be difficult to incorporate into microscopic, single-electron analyses, the problem is easily treated in the effective mass theory by means of a jellium approximation for the ionic charge. We then go beyond the analytic model, incorporating exchange and correlation effects within a simple numerical model. We argue that such an approach is appropriate for describing realistic, high-density, highly disordered devices, providing results comparable to density functional theory, but with greater intuitive appeal, and lower computational effort. We investigate valley coupling in these structures, finding that valley splitting in the low-lying Γband grows much more quickly than the Γ-Δband splitting at high densities. We also find that many-body exchange and correlation corrections affect the valley splitting more strongly than they affect the band splitting.

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preprint2012arXiv

Non-interacting multi-particle quantum random walks applied to the graph isomorphism problem for strongly regular graphs

We investigate the quantum dynamics of particles on graphs ("quantum random walks"), with the aim of developing quantum algorithms for determining if two graphs are isomorphic (related to each other by a relabeling of vertices). We focus on quantum random walks of multiple non-interacting particles on strongly regular graphs (SRGs), a class of graphs with high symmetry that is known to have pairs of graphs that are hard to distinguish. Previous work has already demonstrated analytically that two-particle non-interacting quantum walks cannot distinguish non-isomorphic SRGs of the same family. Here, we demonstrate numerically that three-particle non-interacting quantum walks have significant, but not universal, distinguishing power for pairs of SRGs, proving a fundamental difference between the distinguishing power of two-particle and three-particle non-interacting walks. We analytically show why this distinguishing power is possible, whereas it is forbidden for two-particle non-interacting walks. Based on sampling of SRGs with up to 64 vertices, we find no difference in the distinguishing power of bosonic and fermionic walks. In addition, we find that the four-fermion non-interacting walk has greater distinguishing power than the three-particle walks on SRGs, showing that increasing particle number increases distinguishing power. However, we also analytically show that no non-interacting walk with a fixed number of particles can distinguish all SRGs, thus demonstrating a potential fundamental difference between the distinguishing power of interacting and noninteracting walks.

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preprint2012arXiv

Power law scaling for the adiabatic algorithm for search engine ranking

An important method for search engine result ranking works by finding the principal eigenvector of the "Google matrix." Recently, a quantum algorithm for preparing this eigenvector and evidence of an exponential speedup for some scale-free networks were presented. Here, we show that the run-time depends on features of the graphs other than the degree distribution, and can be altered sufficiently to rule out a general exponential speedup. For a sample of graphs with degree distributions that more closely resemble the Web than in previous work, the proposed algorithm for eigenvector preparation does not appear to run exponentially faster than the classical case.

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preprint2012arXiv

Pulse-gated quantum dot hybrid qubit

A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-like. Here, we show how to take full advantage of the level crossings in a pulsed gating scheme, which decomposes the spin qubit into a series of charge transitions. We develop one and two-qubit dc quantum gates that are simpler than the previously proposed ac gates. We obtain closed form solutions for the control sequences and show that these sub-nanosecond gates can achieve high fidelities.

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preprint2012arXiv

Resonant Adiabatic Passage with Three Qubits

We investigate the non-adiabatic implementation of an adiabatic quantum teleportation protocol, finding that perfect fidelity can be achieved through resonance. We clarify the physical mechanisms of teleportation, for three qubits, by mapping their dynamics onto two parallel and mutually-coherent adiabatic passage channels. By transforming into the adiabatic frame, we explain the resonance by analogy with the magnetic resonance of a spin-1/2 particle. Our results establish a fast and robust method for transferring quantum states, and suggest an alternative route toward high precision quantum gates.

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preprint2012arXiv

Two-electron dephasing in single Si and GaAs quantum dots

We study the dephasing of two-electron states in a single quantum dot in both GaAs and Si. We investigate dephasing induced by electron-phonon coupling and by charge noise analytically for pure orbital excitations in GaAs and Si, as well as for pure valley excitations in Si. In GaAs, polar optical phonons give rise to the most important contribution, leading to a typical dephasing rate of ~5.9 GHz. For Si, intervalley optical phonons lead to a typical dephasing rate of ~140 kHz for orbital excitations and ~1.1 MHz for valley excitations. For harmonic, disorder-free quantum dots, charge noise is highly suppressed for both orbital and valley excitations, since neither has an appreciable dipole moment to couple to electric field variations from charge fluctuators. However, both anharmonicity and disorder break the symmetry of the system, which can lead to increased dipole moments and therefore faster dephasing rates.

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preprint2011arXiv

A fast "hybrid" silicon double quantum dot qubit

We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occupied dot. The architecture is relatively simple to fabricate, a universal set of fast operations can be implemented electrically, and the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.

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preprint2011arXiv

Controllable anisotropic exchange coupling between spin qubits in quantum dots

The exchange coupling between quantum dot spin qubits is isotropic, which restricts the types of quantum gates that can be formed. Here, we propose a method for controlling anisotropic interactions between spins arranged in a bus geometry. The symmetry is broken by an external magnetic field, resulting in XXZ-type interactions that can efficiently generate Greenberger-Horne-Zeilinger (GHZ) states or universal gate sets for exchange-only quantum computing. Analysis of the bus ground state provides a link between quantum critical phenomena and the communication capacity.

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preprint2011arXiv

Cooling of cryogenic electron bilayers via the Coulomb interaction

Heat dissipation in current-carrying cryogenic nanostructures is problematic because the phonon density of states decreases strongly as energy decreases. We show that the Coulomb interaction can prove a valuable resource for carrier cooling via coupling to a nearby, cold electron reservoir. Specifically, we consider the geometry of an electron bilayer in a silicon-based heterostructure, and analyze the power transfer. We show that across a range of temperatures, separations, and sheet densities, the electron-electron interaction dominates the phonon heat-dissipation modes as the main cooling mechanism. Coulomb cooling is most effective at low densities, when phonon cooling is least effective in silicon, making it especially relevant for experiments attempting to perform coherent manipulations of single spins.

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preprint2011arXiv

Heisenberg Spin Bus as a Robust Transmission Line for Perfect State Transfer

We study the protocol known as quantum state transfer for a strongly coupled antiferromagnetic spin chain or ring (acting as a spin bus), with weakly coupled external qubits. By treating the weak coupling as a perturbation, we find that perfect state transfer (PST) is possible when second order terms are included in the expansion. We also show that PST is robust against variations in the couplings along the spin bus and between the bus and the qubits. As evidence of the quantum interference which mediates PST, we show that the optimal time for PST can be smaller with larger qubit separations, for an even-size chain or ring.

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preprint2011arXiv

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed.

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preprint2011arXiv

Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot

We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupation that are analogous to Coulomb diamonds. Excited-state energies can be read directly from the plot, and we develop a rate model that enables a quantitative understanding of the relative sizes of different electron tunnel rates.

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preprint2011arXiv

Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot

We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T.

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preprint2011arXiv

Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective two-electron regime. The singlet-triplet splitting is an essential parameter describing spin qubits, and we extract this splitting from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state.

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preprint2011arXiv

Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot

Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extracted from transport data in the multiple-electron regime, we identify a novel spin-flip cotunneling process that lifts a singlet blockade.

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preprint2010arXiv

Even-Odd Effects of Heisenberg Chains on Long-range Interaction and Entanglement

A strongly coupled Heisenberg chain provides an important channel for quantum communication through its many-body ground state. Yet, the nature of the effective interactions and the ability to mediate long-range entanglement differs significantly for chains of opposite parity. Here, we contrast the characters of even and odd-size chains when they are coupled to external qubits. Additional parity effects emerge in both cases, depending on the positions of the attached qubits. Some striking results include (i) the emergence of maximal entanglement and (ii) Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions for qubits attached to an even chain, and (iii) the ability of chains of either parity to mediate qubit entanglement that is undiminished by distance.

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preprint2010arXiv

Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measurement rate. Such signatures provide a means to calibrate the absolute electron number and verify single electron occupation. Pulsed gate voltage measurements are used to validate the approach.

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preprint2010arXiv

Theory of valley-orbit coupling in a Si/SiGe quantum dot

Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular magnetic fields, and (most importantly for valley coupling) the small local tilt of the quantum well interface away from the crystallographic axes. In absence of a tilt, valley splitting occurs only between pairs of states with the same orbital quantum numbers. However, tilting is ubiquitous in conventional silicon heterostructures, leading to valley-orbit coupling. In this context, "valley splitting" is no longer a well defined concept, and the quantity of merit for qubit applications becomes the ground state gap. For typical dots used as qubits, a rich energy spectrum emerges, as a function of magnetic field, tilt angle, and orbital quantum number. Numerical and analytical solutions are obtained for the ground state gap and for the mixing fraction between the ground and excited states. This mixing can lead to valley scattering, decoherence, and leakage for Si spin qubits.

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preprint2010arXiv

Tunable spin-selective loading of a silicon spin qubit

The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications.

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preprint2010arXiv

Two-particle quantum walks applied to the graph isomorphism problem

We show that the quantum dynamics of interacting and noninteracting quantum particles are fundamentally different in the context of solving a particular computational problem. Specifically, we consider the graph isomorphism problem, in which one wishes to determine whether two graphs are isomorphic (related to each other by a relabeling of the graph vertices), and focus on a class of graphs with particularly high symmetry called strongly regular graphs (SRG's). We study the Green's functions that characterize the dynamical evolution single-particle and two-particle quantum walks on pairs of non-isomorphic SRG's and show that interacting particles can distinguish non-isomorphic graphs that noninteracting particles cannot. We obtain the following specific results: (1) We prove that quantum walks of two noninteracting particles, Fermions or Bosons, cannot distinguish certain pairs of non-isomorphic SRG's. (2) We demonstrate numerically that two interacting Bosons are more powerful than single particles and two noninteracting particles, in that quantum walks of interacting bosons distinguish all non-isomorphic pairs of SRGs that we examined. By utilizing high-throughput computing to perform over 500 million direct comparisons between evolution operators, we checked all tabulated pairs of non-isomorphic SRGs, including graphs with up to 64 vertices. (3) By performing a short-time expansion of the evolution operator, we derive distinguishing operators that provide analytic insight into the power of the interacting two-particle quantum walk.

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preprint2010arXiv

Valley splitting in a Si/SiGe quantum point contact

We present the theory and measurement of valley splitting in a quantum point contact (QPC) in a modulation doped Si/SiGe heterostructure. Our measurements are performed on a submicron Schottky-gated device. An effective mass theory is developed for a QPC formed in a quantum well, grown on a miscut substrate. Both theory and experiments include a perpendicular magnetic field. Our results indicate that both QPC and magnetic confinement can enhance the valley splitting by reducing the spatial extent of the electronic wavefunction. Consequently, the valley splitting can be much larger than the spin splitting for small magnetic fields. We also observe different valley splittings for different transverse modes in the QPC, supporting the notion that when steps are present at the quantum well interface, the spatial extent of the wavefunction plays a dominant role in determining the valley splitting.

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preprint2008arXiv

Multiscale theory of valley splitting

The coupling between $z$ valleys in the conduction band of a Si quantum well arises from phenomena occurring within several atoms from the interface, thus ruling out a theoretical description based on pure effective mass theory. However, the complexity and size of a realistic device precludes an analytical atomistic description. Here, we develop a fully analytical multiscale theory of valley coupling, by combining effective mass and tight binding approaches. The results are of particular interest for silicon qubits and quantum devices, but also provide insight for GaAs quantum wells.

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preprint2007arXiv

Controllable valley splitting in silicon quantum devices

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived spin states appropriate for quantum computing. Here we show that the small valley splittings observed in previous experiments on Si/SiGe heterostructures result from atomic steps at the quantum well interface. Lateral confinement in a quantum point contact limits the electron wavefunctions to several steps, and enhances the valley splitting substantially, up to 1.5 meV. The combination of electronic and magnetic confinement produces a valley splitting larger than the spin splitting, which is controllable over a wide range. These results improve the outlook for realizing spin qubits with long coherence times in silicon-based devices.

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preprint2006arXiv

Elastically Relaxed Free-standing Strained-Si Nanomembranes

Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain, by fabricating membranes in which the final strain state is controlled by elastic strain sharing, i.e., without the formation of defects. We grow Si/SiGe layers on a substrate from which they can be released, forming nanomembranes. X-ray diffraction measurements confirm a final strain predicted by elasticity theory. The effec-tiveness of elastic strain to alter electronic properties is demonstrated by low-temperature longi-tudinal-Hall effect measurements on a strained-Si quantum well before and after release. Elastic strain sharing and film transfer offers an intriguing path towards complex, multiple-layer struc-tures in which each layer's properties are controlled elastically, without the introduction of unde-sirable defects.

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preprint2006arXiv

Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells

We present an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter, $v_v$, which encapsulates the physics of the quantum well interface. The new effective mass parameter is computed by means of a tight binding theory. The resulting formalism provides rather simple analytical results for several geometries of interest, including a finite square well, a quantum well in an electric field, and a modulation doped two-dimensional electron gas. Of particular importance is the problem of a quantum well in a magnetic field, grown on a miscut substrate. The latter may pose a numerical challenge for atomistic techniques like tight-binding, because of its two-dimensional nature. In the effective mass theory, however, the results are straightforward and analytical. We compare our effective mass results with those of the tight binding theory, obtaining excellent agreement.

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preprint2005arXiv

Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG

The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in comparison with its physical dimension. To investigate this issue, we fabricate several types of devices in silicon-germanium heterostructures using two different etches, CF$_4$ and SF$_6$. We estimate the depletion width associated with each etch by two methods: (i) conductance measurements in etched wires of decreasing thickness (to determine the onset of depletion), (ii) capacitance measurements of quantum dots (to estimate the size of the active region). We find that the SF$_6$ etch causes a much smaller depletion width, making it more suitable for device fabrication.

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preprint2005arXiv

Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the tunnel barriers of the dot. The leakage current from the gates is reduced by minimizing their active area. Further suppression of the leakage is achieved by increasing the etch depth of the channel. The top gates are used to put the dot into the Coulomb blockade regime, and conductance oscillations are observed as the voltage on the side gate is varied.

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preprint2003arXiv

Valley splitting in strained silicon quantum wells

A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing architectures. The valley splitting is computed for realistic devices using the quantitative nanoelectronic modeling tool NEMO. A simple, analytically solvable tight-binding model is developed, it yields much physical insight, and it reproduces the behavior of the splitting in the NEMO results. The splitting is in general nonzero even in the absence of electric field in contrast to previous works. The splitting in a square well oscillates as a function of S, the number of layers in the quantum well, with a period that is determined by the location of the valley minimum in the Brillouin zone. The envelope of the splitting decays as $S^3$. Finally the feasibility of observing such oscillations experimentally in modern Si/SiGe heterostructures is discussed.

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preprint2002arXiv

Design and proof of concept for silicon-based quantum dot quantum bits

Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum bit. The novel structure incorporates vertical and lateral tunneling, provides controlled coupling between dots, and enables single electron occupation of each dot. Precise modeling of the design elucidates its potential for scalable quantum computing. For the first time it is possible to translate the requirements of fault-tolerant error correction into specific requirements for gate voltage control electronics in quantum dots. We demonstrate that these requirements are met by existing pulse generators in the kHz-MHz range, but GHz operation is not yet achievable. Our calculations further pinpoint device features that enhance operation speed and robustness against leakage errors. We find that the component technologies for silicon quantum dot quantum computers are already in hand.

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preprint2002arXiv

Experimental observation of high field diamagnetic fluctuations in Niobium

We have performed a magnetic study of a bulk metallic sample of Nb with critical temperature $T_{c}=8.5$ K. Magnetization versus temperature (M {\it vs} T) data obtained for fixed magnetic fields above 1 kOe show a superconducting transition which becomes broader as the field is increased. The data are interpreted in terms of the diamagnetic lowest Landau level (LLL) fluctuation theory. The scaling analysis gives values of the superconducting transition temperature $T_{c}(H)$ consistent with $H_{c2}(T)$% . We search for universal 3D LLL behavior by comparing scaling results for Nb and YBaCuO, but obtain no evidence for universality.

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preprint1998arXiv

3D XY scaling theory of the superconducting phase transition

The intermediate 3D XY scaling theory of superconductivity at zero and nonzero magnetic fields is developed, based only upon the dimensional hypothesis $B\sim (Length)^{-2}$. Universal as well as nonuniversal aspects of the theory are identified, including background terms and demagnetization effects. Two scaling regions are predicted: an "inner" region (very near the zero field superconducting transition, $T_c$), where the fields $B$, $H$, and $H_{ex}$ differ substantially, due to the presence of diamagnetic fluctuations, and an "outer" region (away from $T_c$), where the fields can all be treated similarly. The characteristic field ($H_0$) and temperature ($t_1$) scales, separating the two regimes, are estimated. Scaling theories of the phase transition line, magnetization, specific heat, and conductivity are discussed. Multicritical behavior, involving critical glass fluctuations, is investigated along the transition line, $T_m(B)$, at nonzero fields.

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