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Steven Prawer

Steven Prawer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallquant-phcond-mat.supr-conphysics.optics

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Published work

12 published item(s)

preprint2015arXiv

A TEM study of Si-SiO2 interfaces in silicon nanodevices

The fabrication of micro- and nano-scale silicon electronic devices requires precision lithography and controlled processing to ensure that the electronic properties of the device are optimized. Importantly, the Si-SiO2 interface plays a crucial role in defining these properties. While transmission electron microscopy (TEM) can be used to observe the device architecture, substrate / contact crystallinity and interfacial roughness, the preparation and isolation of the device active area is problematic. In this work, we describe the use of focussed ion beam technologies to isolate and trench-cut targeted device structures for subsequent TEM analysis. Architectures studied include radio frequency, single electron transistors and electrically detected, magnetic resonance devices that have also undergone ion implantation, rapid thermal and forming gas anneals.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Direct measurement and modelling of internal strains in ion-implanted diamond

We present a phenomenological model and Finite Element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution X-ray diffraction (HR-XRD); secondly, the mass density variation of a sample implanted with 500 keV He ions well above its amorphization threshold is characterized with Electron Energy Loss Spectroscopy (EELS). At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage density peak towards greater depth values with respect to those predicted by TRIM simulations, which are well accounted for in the model presented here. The model is then further validated by comparing TEM-measured and simulated thickness values of a buried amorphous carbon layer formed at different depths by implantation of 500 keV He ions through a variable-thickness mask to simulate the simultaneous implantation of ions at different energies.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic properties and metrology of the diamond NV- center under pressure

The negatively charged nitrogen-vacancy (NV-) center in diamond has realized new frontiers in quantum technology. Here, the center's optical and spin resonances are observed under hydrostatic pressures up to 60 GPa. Our observations motivate powerful new techniques to measure pressure and image high pressure magnetic and electric phenomena. Our observations further reveal a fundamental inadequacy of the current model of the center and provide new insight into its electronic structure.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Fabrication and Investigation of Nitrogen doped Ultra-Nano-Crystalline Diamond Hall-bar Devices

Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Phonon-induced dephasing of chromium colour centres in diamond

We report on the coherence properties of single photons from chromium-based colour centres in diamond. We use field-correlation and spectral lineshape measurements to reveal the interplay between slow spectral wandering and fast dephasing mechanisms as a function of temperature. We show that the zero-phonon transition frequency and its linewidth follow a power-law dependence on temperature indicating that the dominant fast dephasing mechanisms for these centres are direct electron-phonon coupling and phonon-modulated Coulomb coupling to nearby impurities. Further, the observed reduction in the quantum yield for photon emission as a function of temperature is consistent with the opening of additional nonradiative channels through thermal activation to higher energy states predominantly and indicates a near-unity quantum efficiency at 4 K.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Chromium single photon emitters in diamond fabricated by ion implantation

Controlled fabrication and identification of bright single photon emitters is at the heart of quantum optics and materials science. Here we demonstrate a controlled engineering of a chromium bright single photon source in bulk diamond by ion implantation. The Cr center has fully polarized emission with a ZPL centered at 749 nm, FWHM of 4 nm, an extremely short lifetime of ~1 ns, and a count rate of 500 kcounts/s. By combining the polarization measurements and the vibronic spectra, a model of the center has been proposed consisting of one interstitial chromium atom with a transition dipole along one of the <100> directions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface

This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which were used to estimate donor activation levels, reported high implant recoveries when using 14 keV phosphorus ions however, it was not possible to correlate the intensity of the hyperfine resonance signal with the electrical measurements in the presence of an SiO2 interface due to donor state ionisation (i.e. compensation effects). Comparative measurements made on silicon with an H-passivated surface reported higher donor hyperfine signal levels consistent with lower surface defect densities at the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Flux noise in ion-implanted nanoSQUIDs

Focused ion beam (FIB) technology has been used to fabricate miniature Nb DC SQUIDs which incorporate resistively-shunted microbridge junctions and a central loop with a hole diameter ranging from 1058 nm to 50 nm. The smallest device, with a 50 nm hole diameter, has a white flux noise level of 2.6 microphy_{0}/Hz^{0.5} at 10^{4} Hz. The scaling of the flux noise properties and focusing effect of the SQUID with the hole size were examined. The observed low-frequency flux noise of different devices were compared with the contribution due to the spin fluctuation of defects during FIB processing and the thermally activated flux hopping in the SQUID washer.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Processing of Photonic Crystal Nanocavity for Quantum Information in Diamond

The realization of photonic crystals (PC) in diamond is of major importance for the entire field of spintronics based on fluorescent centers in diamond. The processing steps for the case of diamond differ from those commonly used, due to the extreme chemical and mechanical properties of this material. The present work summarizes the state of the art in the realization of PC's in diamond. It is based on the creation of a free standing diamond membrane into which the desired nano-sized patterns are milled by the use of Focused-Ion-Beam (FIB). The optimal fabrication-oriented structure parameters are predicted by simulations. The milling strategies, the method of formation the diamond membrane, recipes for dielectric material-manipulation in FIB and optical characterization constraints are discussed in conjunction with their implication on PC cavity design. The thus produced structures are characterized via confocal photoluminescence.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Design of flexible ultrahigh-Q microcavities in diamond-based photonic crystal slabs

We design extremely flexible ultrahigh-Q diamond-based double-heterostructure photonic crystal slab cavities by modifying the refractive index of the diamond. The refractive index changes needed for ultrahigh-Q cavities with $Q ~ 10^7$, are well within what can be achieved ($Δn \sim 0.02$). The cavity modes have relatively small volumes $V<2 (λ/n)^3$, making them ideal for cavity quantum electro-dynamic applications. Importantly for realistic fabrication, our design is flexible because the range of parameters, cavity length and the index changes, that enables an ultrahigh-Q is quite broad. Furthermore as the index modification is post-processed, an efficient technique to generate cavities around defect centres is achievable, improving prospects for defect-tolerant quantum architectures.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Room temperature triggered single-photon source in the near infrared

We report the realization of a solid-state triggered single-photon source with narrow emission in the near infrared at room temperature. It is based on the photoluminescence of a single nickel-nitrogen NE8 colour centre in a chemical vapour deposited diamond nanocrystal. Stable single-photon emission has been observed in the photoluminescence under both continuous-wave and pulsed excitations. The realization of this source represents a step forward in the application of diamond-based single-photon sources to Quantum Key Distribution (QKD) under practical operating conditions.

0 citations0 reviewsNo code linkedOpen access