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Paper detail

Fabrication and Investigation of Nitrogen doped Ultra-Nano-Crystalline Diamond Hall-bar Devices

Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.

preprint2013arXivOpen access
Nina EikenbergKumar GanesanKin Kiong LeeMark T. EdmondsLaurens H. Willems van BeverenSteven Prawer
cond-mat.mes-hallcond-mat.mtrl-sci
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Nina EikenbergKumar GanesanKin Kiong LeeMark T. EdmondsLaurens H. Willems van BeverenSteven Prawer

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