Researcher profile

Steven Flynn

Steven Flynn contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Correlation of Crystal Quality and Extreme Magnetoresistance of WTe$_2$

High quality single crystals of WTe$_2$ were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher quality single crystals than are typically obtained via halide assisted vapor transport methods. Magnetoresistance (MR)values at 9 Tesla and 2 Kelvin as high as 1.75 million \%, nearly an order of magnitude higher than previously reported for this material, were obtained on crystals with residual resistivity ratio (RRR) of approximately 1250. The MR follows a near B$^2$ law (B = 1.95(1)) and, assuming a semiclassical model, the average carrier mobility for the highest quality crystal was found to be ~167,000 cm$^2$/Vs at 2 K. A correlation of RRR, MR ratio and average carrier mobility ($μ_{avg}$) is found with the cooling rate during the flux growth.

preprint2015arXiv

The Effect of Dopants on the Magnetoresistance of WTe2

Elucidating the nature of the large, non-saturating magnetoresistance in WTe2 is a significant step in functionalizing this phenomenon for applications. Here, Mo, Re, and Ta doped WTe2 are compared to determine whether isovalent and aliovalent substitutions have different effects on the large magnetoresistance. By 1% substitution, isoelectronic doping reduces the magnetoresistance by a factor of 1.2 with an apparent linear trend, whereas aliovalent doping reduces the effect by over an order of magnitude while following a higher-order decay. The apparent increased sensitivity of the magnetoresistive effect to aliovalent doping over simple isoelectronic disorder supports the conclusion that the large magnetoresistance in WTe2 arises from interactions between balanced hole and electron populations.

preprint2014arXiv

Titanic Magnetoresistance in WTe2

Magnetoresistance is the change of a material's electrical resistance in response to an applied magnetic field. In addition to its intrinsic scientific interest, it is a technologically important property, placing it in "Pasteur's quadrant" of research value: materials with large magnetorsistance have found use as magnetic sensors 1, in magnetic memory 2, hard drives 3, transistors 4, and are the subject of frequent study in the field of spintronics 5, 6. Here we report the observation of an extremely large one-dimensional positive magnetoresistance (XMR) in the layered transition metal dichalcogenide (TMD) WTe2; 452,700 percent at 4.5 Kelvin in a magnetic field of 14.7 Tesla, and 2.5 million percent at 0.4 Kelvin in 45 Tesla, with no saturation. The XMR is highly anisotropic, maximized in the crystallographic direction where small pockets of holes and electrons are found in the electronic structure. The determination of the origin of this effect and the fabrication of nanostructures and devices based on the XMR of WTe2 will represent a significant new direction in the study and uses of magnetoresistivity. *The published version of the paper includes co-authors Tian Liang and Max Hirschberger. **This paper has been published with new MR data to 60T where the MR of WTe2 reaches 13 million percent (at 0.5K) and still shows no signs of saturation. We also have new electron diffraction patterns to lower temperature (10K). We discuss the possible origin of the MR as coming from an electron-hole 'resonance' condition established by a perfect n/p ratio of 1 (more details in a new "extended data" section). This makes WTe2, possibly, the first realization of a perfectly balanced semimetal. ***The paper is published as "Large non-saturating magnetoresistance in WTe2" in Nature (2014), DOI:10.1038/nature13763