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Stephen Derenzo

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cond-mat.mtrl-sci nucl-ex physics.ins-det

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preprint2022arXiv

Monte Carlo Calculations of the Extraction of Scintillation Light from Cryogenic N-type GaAs

The high scintillation luminosity of n-type GaAs at 10K is surprising because (1) with a refractive index of about 3.5, escape is inhibited by total internal reflection and (2) narrow-beam experiments at 90K report infrared absorption coefficients of several per cm. This paper presents Monte Carlo calculations showing that the high luminosity at 10K can be explained if (1) narrow-beam absorption is almost all optical scattering and (2) the absolute absorption coefficient is below 0.1 per cm. Sixteen surface reflector configurations are simulated for a range of internal scattering and absolute absorption coefficients, and these can guide the design of cryogenic scintillating GaAs targets for the direct detection of dark matter. The discussion section presents a possible infrared scattering mechanism based on the metallic nature of n-type GaAs. Appendix A describes the Monte Carlo program steps in detail. Appendix B shows how narrow-beam and integrating sphere experiments can measure the cryogenic optical scattering and absolute absorption coefficients.

preprint2020arXiv

How Silicon and Boron Dopants Govern the Cryogenic Scintillation Properties of N-type GaAs

This paper is the first report describing how the concentrations of silicon and boron govern the cryogenic scintillation properties of n-type GaAs. It shows that valence band holes are promptly trapped on radiative centers and then combine radiatively with silicon donor band electrons at rates that increase with the density of free carriers. It also presents the range of silicon and boron concentrations needed for efficient light emission under X-ray excitation, which along with its low band gap and apparent absence of afterglow, make scintillating GaAs suitable for the detection of rare, low-energy electronic excitations from interacting dark matter particles. A total of 29 samples from four different suppliers were studied. Luminosities and timing responses were measured for the four principal emission bands centered at 860, 930, 1070, and 1335 nm, and for the total emissions. Excitation pulses of 40 kVp X-rays were provided by a light-excited X-ray tube driven by an ultra-fast laser. Scintillation emissions from 800 to 1350 nm were measured using an InGaAs photomultiplier. Within the concentration ranges of free carriers from 2 x 10^16/cm3 to 6 x 10^17/cm3 and boron from 1.5 x 10^18/cm3 to 6 x 10^18/cm3, nine samples have luminosities > 70 photons/keV and two have luminosities > 110 photons/keV. Other samples in that range have lower luminosities due to higher concentrations of non-radiative centers. The decay times decrease by typically a factor of ten with increasing free carrier concentrations from 10^17/cm3 to 2 x 10^18/cm3.