Researcher profile

Edith Bourret

Edith Bourret contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

The third dimension of ferroelectric domain walls

Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded in a 3D material, however, the domain walls are not perfectly flat and can form networks, which leads to complex physical structures. We demonstrate the importance of the nanoscale structure for the emergent transport properties, studying electronic conduction in the 3D network of neutral and charged domain walls in ErMnO$_3$. By combining tomographic microscopy techniques and finite element modelling, we clarify the contribution of domain walls within the bulk and show the significance of curvature effects for the local conduction down to the nanoscale. The findings provide insights into the propagation of electrical currents in domain wall networks, reveal additional degrees of freedom for their control, and provide quantitative guidelines for the design of domain wall based technology.

preprint2021arXiv

Neutron Response of the EJ-254 Boron-Loaded Plastic Scintillator

Organic scintillators doped with capture agents provide a detectable signal for neutrons over a broad energy range. This work characterizes the fast and slow neutron response of EJ-254, an organic plastic scintillator with 5% natural boron loading by weight. For fast neutrons, the primary mechanism for light generation in organic scintillators is n-p elastic scattering. To study the fast neutron response, the proton light yield of EJ-254 was measured at the 88-Inch Cyclotron at Lawrence Berkeley National Laboratory. Using a broad-spectrum neutron source and a double time-of-flight technique, the EJ-254 proton light yield was obtained over the energy range of approximately 270 keV to 4.5 MeV and determined to be in agreement with other plastic scintillators comprised of the same polymer base. To isolate the slow neutron response, an AmBe source with polyethylene moderator was made incident on the EJ-254 scintillator surrounded by an array of EJ-309 observation detectors. Events in the EJ-254 target coincident with the signature 477.6 keV $γ$ ray (resulting from deexcitation of the residual $^{7}$Li nucleus following boron neutron capture) were identified. Pulse shape discrimination was used to evaluate the temporal differences in the response of EJ-254 scintillation signals arising from $γ$-ray and fast/slow neutron interactions. Clear separation between $γ$-ray and fast neutrons signals was not achieved and the neutron capture feature was observed to overlap both the $γ$-ray and fast neutron bands. Taking into account the electron light nonproportionality, the neutron-capture light yield in EJ-254 was determined to be 89.4$\pm$1.1 keVee.

preprint2020arXiv

How Silicon and Boron Dopants Govern the Cryogenic Scintillation Properties of N-type GaAs

This paper is the first report describing how the concentrations of silicon and boron govern the cryogenic scintillation properties of n-type GaAs. It shows that valence band holes are promptly trapped on radiative centers and then combine radiatively with silicon donor band electrons at rates that increase with the density of free carriers. It also presents the range of silicon and boron concentrations needed for efficient light emission under X-ray excitation, which along with its low band gap and apparent absence of afterglow, make scintillating GaAs suitable for the detection of rare, low-energy electronic excitations from interacting dark matter particles. A total of 29 samples from four different suppliers were studied. Luminosities and timing responses were measured for the four principal emission bands centered at 860, 930, 1070, and 1335 nm, and for the total emissions. Excitation pulses of 40 kVp X-rays were provided by a light-excited X-ray tube driven by an ultra-fast laser. Scintillation emissions from 800 to 1350 nm were measured using an InGaAs photomultiplier. Within the concentration ranges of free carriers from 2 x 10^16/cm3 to 6 x 10^17/cm3 and boron from 1.5 x 10^18/cm3 to 6 x 10^18/cm3, nine samples have luminosities > 70 photons/keV and two have luminosities > 110 photons/keV. Other samples in that range have lower luminosities due to higher concentrations of non-radiative centers. The decay times decrease by typically a factor of ten with increasing free carrier concentrations from 10^17/cm3 to 2 x 10^18/cm3.