Source author record

Stephan W. Koch

Stephan W. Koch appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.mes-hall physics.optics cond-mat.other physics.ins-det

Catalog footprint

What is connected

8works

5topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors

The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) with Bi concentrations below $10 \%$, it is shown that this method works very efficiently, especially due to its reasonably low demand on computer memory. The resulting bandstructure and wavefunctions are used to compute the interaction matrix elements that serve as input to microscopic calculations of the optical properties and intrinsic losses relevant for optoelectronic applications of dilute bismides.

preprint2020arXiv

Ultrafast band-gap renormalization and build-up of optical gain in monolayer MoTe$_2$

The dynamics of band-gap renormalization and gain build-up in monolayer MoTe$_2$ is investigated by evaluating the non-equilibrium Dirac-Bloch equations with the incoherent carrier-carrier and carrier-phonon scattering treated via quantum-Boltzmann type scattering equations. For the case where an approximately $300$ fs-long high intensity optical pulse generates charge-carrier densities in the gain regime, the strong Coulomb coupling leads to a relaxation of excited carriers on a few fs time scale. The pump-pulse generation of excited carriers induces a large band-gap renormalization during the time scale of the pulse. Efficient phonon coupling leads to a subsequent carrier thermalization within a few ps, which defines the time scale for the optical gain build-up energetically close to the low-density exciton resonance.

preprint2016arXiv

Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys

Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This dependence breaks down at high concentrations where empirical models accounting only for the As-Bi interaction are not applicable. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.

preprint2016arXiv

Gain spectroscopy of a type-II VECSEL chip

Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by experimental spectra. The results show a gain buildup on the type-II chip which is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from reduced electron-hole scattering.

preprint2015arXiv

Optically bright $p$-excitons indicating strong Coulomb coupling in transition-metal dichalcogenides

It is shown that the strong Coulomb coupling in intrinsic suspended semiconducting transition metal dichalcogenides can exceed the critical value needed for an excitonic ground state. The dipole-allowed optical excitations then correspond to intra-excitonic transitions such that the optically bright excitonic transitions near the Dirac points have a $p$-like symmetry whereas the $s$-like states are dipole forbidden. The large intrinsic coupling strength seems to be a generic property of the semiconducting transition metal dichalcogenides and strong Coulomb-coupling signatures in the form of the optical selection rules can be observed even in samples grown on typical substrates like SiO$_2$. For the examples of WS$_2$ and WSe$_2$, excellent agreement of the computed excitonic resonance energies with recent experiments is demonstrated.

preprint2012arXiv

Classical theory of second-harmonic generation from magnetic metamaterials

Strong second-harmonic generation has recently been experimentally observed from metamaterials consisting of periodic arrays of metal split ring resonators with an effective negative magnetic permeability [Science, 313, 502 (2006)]. To explore the underlying physical mechanism, a classical model derived from microscopic theory is employed here. The quasi-free electrons inside the metal are approximated as a classical Coulomb-interacting electron gas, and their motion under the excitation of an external electromagnetic field is described by the cold-plasma wave equations. Through numerical simulations, it is demonstrated that the microscopic theory includes the dominant physical mechanisms bothqualitatively and quantitatively.

preprint2011arXiv

Terahertz excitation of a coherent three-level Λ-type exciton-polariton microcavity mode

Interactions of few-cycle terahertz pulses with the induced optical polarization in a quantum-well microcavity reveal that the lower and higher exciton-polariton modes together with the optically forbidden 2p-exciton state form a unique Λ-type three-level system. Pronounced nonlinearities are observed via time-resolved strong-terahertz and weak-optical excitation spectroscopy and explained with a fully microscopic theory. The results show that the terahertz pulses strongly couple the exciton-polariton states to the 2p-exciton state while no resonant transition between the two polariton levels is observed.

preprint2009arXiv

A classical theory for second-harmonic generation from metallic nanoparticles

In this article, we develop a classical electrodynamic theory to study the optical nonlinearities of metallic nanoparticles. The quasi-free electrons inside the metal are approximated as a classical Coulomb-interacting electron gas, and their motion under the excitation of an external electromagnetic field is described by the plasma equations. This theory is further tailored to study second-harmonic generation. Through detailed experiment-theory comparisons, we validate this classical theory as well as the associated numerical algorithm. It is demonstrated that our theory not only provides qualitative agreement with experiments, it also reproduces the overall strength of the experimentally observed second-harmonic signals.