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Stepan Kovarik

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cond-mat.mtrl-sci physics.app-ph

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preprint2022arXiv

Electron paramagnetic resonance of alkali metal atoms and dimers on ultrathin MgO

Electron paramagnetic resonance (EPR) can provide unique insight into the chemical structure and magnetic properties of dopants in oxide and semiconducting materials that are of interest for applications in electronics, catalysis, and quantum sensing. Here, we demonstrate that EPR in combination with scanning tunneling microscopy (STM) allows for probing the bonding and charge state of alkali metal atoms on an ultrathin magnesium oxide layer on a Ag substrate. We observe a magnetic moment of $1μ_\mathrm{B}$ for Li$_2$, LiNa, and Na$_2$ dimers corresponding to spin radicals with a charge state of $+1e$. Single alkali atoms have the same charge state and no magnetic moment. The ionization of the adsorbates is attributed to charge transfer through the oxide to the metal substrate. Our work highlights the potential of EPR-STM to provide insight into dopant atoms that are relevant for the control of the electrical properties of surfaces and nanodevices.

preprint2020arXiv

Real-space imaging of atomic-scale spin textures at nanometer distances

Spin-polarized scanning tunneling microscopy (SP-STM) experiments on ultrathin films with non-collinear spin textures demonstrate that resonant tunneling allows for atomic-scale spin-sensitive imaging in real space at tip-sample distances of up to 8 nm. Spin-polarized resonance states evolving between the foremost atom of a magnetic probe tip and the opposed magnetic surface atom are found to provide a loophole from the hitherto existing dilemma of losing spatial resolution when increasing the tip-sample distance in a scanning probe setup. Bias-dependent series of SP-STM images recorded via resonant tunneling reveal spin sensitivity at resonance conditions, indicating that the spin-polarized resonance states act as mediators for the spin contrast across the nm-spaced vacuum gap. With technically feasible distances in the nm regime, resonant tunneling in SP-STM qualifies for a spin-sensitive read-write technique with ultimate lateral resolution in future spintronic applications.