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Nicolas Lorente

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Electron paramagnetic resonance of alkali metal atoms and dimers on ultrathin MgO

Electron paramagnetic resonance (EPR) can provide unique insight into the chemical structure and magnetic properties of dopants in oxide and semiconducting materials that are of interest for applications in electronics, catalysis, and quantum sensing. Here, we demonstrate that EPR in combination with scanning tunneling microscopy (STM) allows for probing the bonding and charge state of alkali metal atoms on an ultrathin magnesium oxide layer on a Ag substrate. We observe a magnetic moment of $1μ_\mathrm{B}$ for Li$_2$, LiNa, and Na$_2$ dimers corresponding to spin radicals with a charge state of $+1e$. Single alkali atoms have the same charge state and no magnetic moment. The ionization of the adsorbates is attributed to charge transfer through the oxide to the metal substrate. Our work highlights the potential of EPR-STM to provide insight into dopant atoms that are relevant for the control of the electrical properties of surfaces and nanodevices.

preprint2012arXiv

Correlation-mediated processes for electron-induced switching between Neel states of Fe anti-ferromagnetic chains

The controlled switching between two quasi-stable Neel states in adsorbed anti-ferromagnetic Fe chains has recently been achieved by Loth et al [Science 335, 196 (2012)]. In order to rationalize their data, we evaluate the rate of tunneling electron-induced switching between the Néel states. Good agreement is found with the experiment permitting us to identify three switching mechanisms: (i) low-bias direct electron-induced transitions, (ii) intermediate-bias switching via spin-wave-like excitation, and (iii) high-bias transitions mediated by domain wall formation. Spin correlations in the anti-ferromagnetic chains are the switching driving force leading to a marked chain-size dependence.

preprint2012arXiv

Excitation of local magnetic moments by tunnelling electrons

The advent of milli-kelvin scanning tunneling microscopes (STM) with inbuilt magnetic fields has opened access to the study of magnetic phenomena with atomic resolution at surfaces. In the case of single atoms adsorbed on a surface, the existence of different magnetic energy levels localized on the adsorbate is due to the breaking of the rotational invariance of the adsorbate spin by the interaction with its environment, leading to energy terms in the meV range. These structures were revealed by STM experiments in IBM Almaden in the early 2000's for atomic adsorbates on CuN surfaces. The experiments consisted in the study of the changes in conductance caused by inelastic tunnelling of electrons (IETS, Inelastic Electron Tunnelling Spectroscopy). Manganese and Iron adatoms were shown to have different magnetic anisotropies induced by the substrate. More experiments by other groups followed up, showing that magnetic excitations could be detected in a variety of systems: e.g. complex organic molecules showed that their magnetic anistropy was dependent on the molecular environment, piles of magnetic molecules showed that they interact via intermolecular exchange interaction, spin waves were excited on ferromagnetic surfaces and in Mn chains, and magnetic impurities have been analyzed on semiconductors. These experiments brought up some intriguing questions: the efficiency of magnetic excitations was very high, the excitations could or could not involve spin flip of the exciting electron and singular-like behavior was sometimes found at the excitation thresholds. These facts called for extended theoretical analysis; perturbation theories, sudden-approximation approaches and a strong coupling scheme successfully explained most of the magnetic inelastic processes. In addition, many-body approaches were also used to decipher the interplay between inelas

preprint2011arXiv

Negative differential resistance in scanning tunneling microscopy: simulations on C$_{60}$-based molecular overlayers

We determine the conditions in which negative differential resistance (NDR) appears in the C$_{60}$-based molecular device of [Phys. Rev. Lett. {\bf 100}, 036807 (2008)] by means of ab-initio electron-transport simulations. Our calculations grant access to bias-dependent intrinsic properties of the molecular device, such as electronic levels and their partial widths. We show that these quantities depend on the molecule-molecule and molecule-electrode interactions of the device. Hence, NDR can be tuned by modifying the bias behavior of levels and widths using both types of interactions.

preprint2007arXiv

Creating pseudo Kondo-resonances by field-induced diffusion of atomic hydrogen

In low temperature scanning tunneling microscopy (STM) experiments a cerium adatom on Ag(100) possesses two discrete states with significantly different apparent heights. These atomic switches also exhibit a Kondo-like feature in spectroscopy experiments. By extensive theoretical simulations we find that this behavior is due to diffusion of hydrogen from the surface onto the Ce adatom in the presence of the STM tip field. The cerium adatom possesses vibrational modes of very low energy (3-4meV) and very high efficiency (> 20%), which are due to the large changes of Ce-states in the presence of hydrogen. The atomic vibrations lead to a Kondo-like feature at very low bias voltages. We predict that the same low-frequency/high-efficiency modes can also be observed at lanthanum adatoms.