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Researcher profile

Pietro Gambardella

Pietro Gambardella contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.chem-ph

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Published work

14 published item(s)

preprint2026arXiv

Dynamical Stabilization of Inverted Magnetization and Antimagnons by Spin Injection in an Extended Magnetic System

Dynamical perturbations can modify the energy landscape of a physical system, such that unstable equilibrium configurations become stable when subject to an external drive. The magnetic analog of such dynamical stabilization corresponds to saturation of the magnetization against an external field. Here we report dynamical stabilization of the magnetization in thin film bismuth-substituted yttrium iron garnet by spin current injection from an adjacent Pt layer. Magneto-optical Kerr effect measurements demonstrate magnetization reversal against magnetic fields up to 3000 times larger than the film's coercivity once the spin injection surpasses a critical threshold associated with negative damping. Micromagnetic simulations reveal that this process is mediated by the excitation of a large population of incoherent magnons with non-zero wave vector, leading to a transient shortening and subsequent stabilization of the inverted magnetization. The elementary excitations of the high-energy inverted magnetization state are shown to be antimagnons, quasi-particles carrying opposite energy and spin relative to magnons. Our results further reveal how the system's size and minimization of nonlinear magnon scattering processes play a key role in dynamical stabilization, opening new avenues for magnetic state control beyond conventional magnetization switching. Dissipation-driven phase transitions in large-area magnetic systems provide a solid-state platform to study magnonic analogs of relativistic phenomena, such as Klein tunneling and black holes, as well as spin-wave amplification and lasing.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Generating unconventional spin-orbit torques with patterned phase gradients in tungsten thin films

A key aim in spintronics is to achieve current-induced magnetization switching via spin-orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy-metal devices, giving variations in thickness, composition, or interface quality. However, the small gradients achievable with common growth techniques limit both the impact of this approach and understanding of the underlying physical mechanisms. Here, spin-orbit torques are patterned on a mesoscopic length scale in tungsten thin films using direct-write laser annealing. Through transmission electron microscopy, resistivity, and second harmonic measurements, the continuous transformation of the crystalline phase of W films from the highly spin-orbit coupled, high resistivity $β$ phase to the minimally spin-orbit coupled, low resistivity $α$ phase is tracked with increasing laser fluence. Gradients with different steepness are patterned in the tungsten phase to create spin-orbit torque channels and, when interfaced with CoFeB, tungsten wires with a sufficiently strong gradient can switch the magnetization without an applied magnetic field. Therefore, exploiting the unique microstructure of mixed-phase W allows precise control of the local electronic current density and direction, as well as local spin-orbit torque efficiency, providing a new avenue for the design of efficient spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Current-driven dynamics and ratchet effect of skyrmion bubbles in a ferrimagnetic insulator

Magnetic skyrmions are compact chiral spin textures that exhibit a rich variety of topological phenomena and hold potential for developing high-density memory devices and novel computing schemes driven by spin currents. Here, we demonstrate room temperature interfacial stabilization and current-driven control of skyrmion bubbles in the ferrimagnetic insulator Tm3Fe5O12 (TmIG) coupled to Pt. We track the current-induced motion of individual skyrmion bubbles. The ferrimagnetic order of the crystal together with the interplay of spin-orbit torques and pinning determine the skyrmion dynamics in TmIG and result in a strong skyrmion Hall effect characterized by a negative deflection angle and hopping motion. Further, we show that the velocity and depinning threshold of the skyrmion bubbles can be modified by exchange coupling TmIG to an in-plane magnetized Y3Fe5O12 layer, which distorts the spin texture of the skyrmions and leads to a directional-dependent rectification of their dynamics. This effect, which is equivalent to a magnetic ratchet, is exploited to control the skyrmion flow in a racetrack-like device.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Spin-orbit torques and magnetization switching in Gd/Fe multilayers generated by current injection in NiCu alloys

Light transition metals have recently emerged as a sustainable material class for efficient spin-charge interconversion. We report measurements of current-induced spin-orbit torques generated by Ni$_{1-x}$Cu$_{x}$ alloys in perpendicularly magnetized ferrimagnetic Gd/Fe multilayers. We show that the spin-orbit torque efficiency of Ni$_{1-x}$Cu$_{x}$ increases with the Ni/Cu atomic ratio, reaching values comparable to those of Pt for Ni$_{55}$Cu$_{45}$. Furthermore, we demonstrate magnetization switching of a 20-nm-thick Gd/Fe multilayer with a threshold current that decreases with increasing Ni concentration, similar to the spin-orbit torque efficiency. Our findings show that Ni$_{1-x}$Cu$_{x}$$-$based magnetic heterostructures allow for efficient control of the magnetization by electric currents.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electron paramagnetic resonance of alkali metal atoms and dimers on ultrathin MgO

Electron paramagnetic resonance (EPR) can provide unique insight into the chemical structure and magnetic properties of dopants in oxide and semiconducting materials that are of interest for applications in electronics, catalysis, and quantum sensing. Here, we demonstrate that EPR in combination with scanning tunneling microscopy (STM) allows for probing the bonding and charge state of alkali metal atoms on an ultrathin magnesium oxide layer on a Ag substrate. We observe a magnetic moment of $1μ_\mathrm{B}$ for Li$_2$, LiNa, and Na$_2$ dimers corresponding to spin radicals with a charge state of $+1e$. Single alkali atoms have the same charge state and no magnetic moment. The ionization of the adsorbates is attributed to charge transfer through the oxide to the metal substrate. Our work highlights the potential of EPR-STM to provide insight into dopant atoms that are relevant for the control of the electrical properties of surfaces and nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Engineering the spin-orbit torque efficiency and magnetic properties of Tb/Co ferrimagnetic multilayers by stacking order

We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic anisotropy, compensation temperature and SOT-induced switching are highly sensitive to the stacking order of Co and Tb and to the element in contact with Pt. Our study further shows that Tb is an efficient SOT generator when in contact with Co, such that its position in the stack can be adjusted to generate torques additive to those generated by Pt. With optimal stacking and layer thickness, the dampinglike SOT efficiency reaches up to 0.3, which is more than twice that expected from the Pt/Co bilayer. Moreover, the magnetization can be easily switched by the injection of pulses with current density of about 0.5-2*107A/cm2 despite the extremely high perpendicular magnetic anisotropy barrier (up to 7.8 T). Efficient switching is due to the combination of large SOTs and low saturation magnetization owing to the ferrimagnetic character of the multilayers. We observed current-driven DW motion in the absence of any external field, which is indicative of homochiral Néel-type DWs stabilized by the interfacial Dzyaloshinkii-Moriya interaction. These results show that the stacking order in transition metal/rare-earth synthetic ferrimagnets plays a major role in determining the magnetotransport properties relevant for spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Giant orbital Hall effect and orbital-to-spin conversion in 3d, 5d, and 4f metallic heterostructures

The orbital Hall effect provides an alternative means to the spin Hall effect to convert a charge current into a flow of angular momentum. Recently, compelling signatures of orbital Hall effects have been identified in 3d transition metals. Here, we report a systematic study of the generation, transmission, and conversion of orbital currents in heterostructures comprising 3d, 5d, and 4f metals. We show that the orbital Hall conductivity of Cr reaches giant values of the order of 5*10^5 Ohm^{-1} m^{-1} and that Pt presents a strong orbital Hall effect in addition to the spin Hall effect. Measurements performed as a function of thickness of nonmagnetic Cr, Mn, and Pt layers and ferromagnetic Co and Ni layers reveal how the orbital and spin currents compete or assist each other in determining the spin-orbit torques acting on the magnetic layer. We further show how this interplay can be drastically modulated by introducing 4 f spacers between the nonmagnetic and magnetic layers. Gd and Tb act as very efficient orbital-to-spin current converters, boosting the spin-orbit torques generated by Cr by a factor of 4 and reversing the sign of the torques generated by Pt. To interpret our results, we present a generalized drift-diffusion model that includes both spin and orbital Hall effects and describes their interconversion mediated by spin-orbit coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnon transport and thermoelectric effects in ultrathin Tm3Fe5O12/Pt nonlocal devices

The possibility of electrically exciting and detecting magnon currents in magnetic insulators has opened exciting perspectives for transporting spin information in electronic devices. However, the role of the magnetic field and the nonlocal thermal gradients on the magnon transport remain unclear. Here, by performing nonlocal harmonic voltage measurements, we investigate magnon transport in perpendicularly magnetized ultrathin Tm3Fe5O12 (TmIG) films coupled to Pt electrodes. We show that the first harmonic nonlocal voltage captures spin-driven magnon transport in TmIG, as expected, and the second harmonic is dominated by thermoelectric voltages driven by current-induced thermal gradients at the detector. The magnon diffusion length in TmIG is found to be on the order of 0.3 μm at 0.5 T and gradually decays to 0.2 μm at 0.8 T, which we attribute to the suppression of the magnon relaxation time due to the increase of the Gilbert damping with field. By performing current, magnetic field, and distance dependent nonlocal and local measurements we demonstrate that the second harmonic nonlocal voltage exhibits five thermoelectric contributions, which originate from the nonlocal spin Seebeck effect and the ordinary, planar, spin, and anomalous Nernst effects. Our work provides a guide on how to disentangle magnon signals from diverse thermoelectric voltages of spin and magnetic origin in nonlocal magnon devices, and establish the scaling laws of the thermoelectric voltages in metal/insulator bilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spin-orbit torque switching of magnetic tunnel junctions for memory application

Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer torques (STT), which have emerged as a leading non-volatile memory technologie, SOT broaden the scope of current-induced magnetic switching to applications that run close to the clock speed of the central processing unit and unconventional computing architectures. In this paper, we review the fundamental characteristics of SOT and their use to switch magnetic tunnel junction (MTJ) devices, the elementary unit of the magnetoresistive random access memory (MRAM). In the first part, we illustrate the physical mechanisms that drive the SOT and magnetization reversal in nanoscale structures. In the second part, we focus on the SOT-MTJ cell. We discuss the anatomy of the MTJ in terms of materials and stack development, summarize the figures of merit for SOT switching, review the field-free operation of perpendicularly magnetized MTJs, and present options to combine SOT, STT and voltage-gate assisted switching. In the third part, we consider SOT-MRAMs in the perspective of circuit integration processes, introducing considerations on scaling and performance, as well as macro-design architectures. We thus bridge the fundamental description of SOT-driven magnetization dynamics with an application-oriented perspective, including device and system-level considerations, goals, and challenges.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Molecular Approach for Engineering Interfacial Interactions in Magnetic-Topological Insulator Heterostructures

Controlling interfacial interactions in magnetic/topological insulator heterostructures is a major challenge for the emergence of novel spin-dependent electronic phenomena. As for any rational design of heterostructures that rely on proximity effects, one should ideally retain the overall properties of each component while tuning interactions at the interface. However, in most inorganic interfaces interactions are too strong, consequently perturbing, and even quenching, both the magnetic moment and the topological surface states at each side of the interface. Here we show that these properties can be preserved by using ligand chemistry to tune the interaction of magnetic ions with the surface states. By depositing Co-based porphyrin and phthalocyanine monolayers on the surface of Bi$_2$Te$_3$ thin films, robust interfaces are formed that preserve undoped topological surface states as well as the pristine magnetic moment of the divalent Co ions. The selected ligands allow us to tune the interfacial hybridization within this weak interaction regime. These results, which are in stark contrast with the observed suppression of the surface state at the first quintuple layer of Bi$_2$Se$_3$ induced by the interaction with Co phthalocyanines, demonstrate the capability of planar metal-organic molecules to span interactions from the strong to the weak limit.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Chiral Domain Wall Injector Driven by Spin-orbit Torques

Memory and logic devices that encode information in magnetic domains rely on the controlled injection of domain walls to reach their full potential. In this work, we exploit the chiral coupling induced by the Dzyaloshinskii-Moriya interaction between in-plane and out-of-plane magnetized regions of a Pt/Co/AlO\textsubscript{x} trilayer in combination with current-driven spin-orbit torques to control the injection of domain walls into magnetic conduits. We demonstrate that the current-induced domain nucleation is strongly inhibited for magnetic configurations stabilized by the chiral coupling and promoted for those that have the opposite chirality. These configurations allow for efficient domain wall injection using current densities of the order of $4\times$\SI{e11}{A m^{-2}}, which are lower than those used in other injection schemes. Furthermore, by setting the orientation of the in-plane magnetization using an external field, we demonstrate the use of a chiral domain wall injector to create a controlled sequence of alternating domains in a racetrack structure driven by a steady stream of unipolar current pulses.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effects of Oxidation of Top and Bottom Interfaces on the Electric, Magnetic, and Spin-Orbit Torque Properties of Pt/Co/AlOx Trilayers

Oxidation strongly influences the properties of magnetic layers employed in spintronic devices. We study the effect of oxidation on the structural, magnetic, and electrical properties as well as current-induced spin-orbit torques (SOTs) in Pt/Co/AlOx, Pt/CoOx/Co/AlOx, and PtOx/Co/AlOx layers. We show how the saturation magnetization, perpendicular magnetic anisotropy, anomalous Hall resistance, and SOT are systematically affected by the degree of oxidation of both the Pt/Co and Co/Al interfaces. Oxidation of the Co/Al interface results in a 21% and 42% variation of the dampinglike and fieldlike SOT efficiencies, which peak at 0.14 and 0.07, respectively. The insertion of a paramagnetic CoOx layer between Pt and Co maintains a very strong perpendicular magnetic anisotropy and improves the dampinglike and fieldlike SOT efficiencies, up to 0.26 and 0.20, respectively. In contrast with recent reports, we do not find that the oxidation of Pt leads to a significant enhancement of the torques. Rather, we find that oxygen migrates from Pt to the Co and Al layers, leading to a time-dependent oxidation profile and an effective spin Hall conductivity that decreases with increasing oxygen concentration. Finally, we study current-induced switching in Pt/Co/AlOx with different degrees of oxidation and find a linear relationship between the critical switching current and the effective magnetic anisotropy controlled by the oxidation of Al. These results highlight the importance of interfaces and oxidation effects on the SOT and magnetotransport properties of heavy metal/ferromagnet/oxide trilayers and provide information on how to improve the SOT efficiency and magnetization-switching characteristics of these systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers

We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo, W) at the Pt/Co interface on the spin-orbit torques, Hall effect, magnetoresistance, saturation magnetization, and magnetic anisotropy. We find that the damping-like spin-orbit torque decreases substantially for all samples with a spacer layer compared to the reference Pt/Co bilayer, consistently with the opposite sign of the atomic spin-orbit coupling constant of the spacer elements relative to Pt. The reduction of the damping-like torque is monotonic with atomic number for the isoelectronic 3d, 4d, and 5d elements, with the exception of V that has a stronger effect than Cr. The field-like spin-orbit torque almost vanishes for all spacer layers irrespective of their composition, suggesting that this torque predominantly originates at the Pt/Co interface. The anomalous Hall effect, magnetoresistance, and saturation magnetization are also all reduced substantially, whereas the sheet resistance is increased in the presence of the spacer layer. Finally, we evidence a correlation between the amplitude of the spin-orbit torques, the spin Hall-like magnetoresistance, and the perpendicular magnetic anisotropy. These results highlight the significant influence of ultrathin spacer layers on the magnetotransport properties of heavy metal/ferromagnetic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales

We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measurements provide direct evidence of magnetization reversal and switching distributions. Close to the critical switching voltage we observe stochastic reversal events due to a finite incubation delay preceding the magnetization reversal. Upon increasing the pulse amplitude to twice the critical voltage the reversal becomes quasi-deterministic, leading to reliable bipolar switching at sub-ns timescales in zero external field. We further investigate the switching probability as a function of dc bias of the MTJ and external magnetic field, providing insight on the parameters that determine the critical switching voltage.

0 citations0 reviewsNo code linkedOpen access