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Steffen Richter

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Published work

3 published item(s)

preprint2022arXiv

Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC

We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of the field and frequency dependencies of the magnetic response due to the spin transitions associated with the nitrogen defect in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation. We investigate spin transitions of hexagonal ($h$) and cubic ($k$) coordinated nitrogen including coupling with its nuclear spin (I=1), and we propose a model approach for the magnetic susceptibility to account for the spin transitions. From the THz-EPR-GSE measurements we can fully determine the polarization properties of the spin transitions and we obtain $g$ and hyperfine splitting parameters using magnetic field and frequency dependent Lorentzian oscillator lineshape functions. We propose frequency-scanning THz-EPR-GSE as a new and versatile method to study properties of spins in solid state materials.

preprint2016arXiv

Fundamental absorption edges in heteroepitaxial YBiO$_3$ thin films

The dielectric function of heteroepitaxial YBiO$_3$ grown on $a$-Al$_2$O$_3$ single crystals via pulsed laser deposition is determined in the spectral range from 0.03 eV to 4.5 eV by simultaneous modeling of spectroscopic ellipsometry and optical transmission data of YBiO$_3$ films of different thickness. The (111)-oriented YBiO$_3$ films are nominally unstrained and crystallize in a defective fluorite-type structure with $Fm\bar{3}m$ space group. From the calculated absorption spectrum, a direct electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around 0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting electronic band structure calculations predicting either a topologically trivial or non-trivial insulating ground state in YBiO$_3$.

preprint2015arXiv

Antiferromagnetic phase transition in the temperature-dependent NIR-VUV dielectric function of hexagonal YMnO$_3$

Hexagonal YMnO$_3$ is well known for the co-occurrence of ferroelectricity and antiferromagnetism at low temperatures. Using temperature-dependent spectroscopic ellipsometry at an $a$-plane oriented single crystal, we show how the dielectric function is affected by the magnetic order transition at the Néel temperature. We focus especially on the pronounced charge transfer transitions around (1.6-1.7)eV which are strongly connected to Mn 3$d$ electrons. If described with a Bose-Einstein model, the temperature dependency of their energy and broadening is characterized by effective phonon energies not larger than 8meV. We argue that this is a hint for the occurrence of a soft phonon mode related to the antiferromagnetic phase transition. This is observed in both tensor components of the dielectric function, parallel and perpendicular to the crystallographic $c$-axis. Furthermore, a suitable parametrization for the uniaxial dielectric function is presented for the NIR-VUV spectral range. The broad transitions at energies higher than a critical point-like bandgap do not show a clear temperature dependence. We also observe some weak discrete absorption features around the strong charge transfer transitions with energies matching well to low-temperature photoluminescence signals.