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Source author record

Stefano Gariglio

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-con

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6 publications

preprint2023arXiv

Characteristic lengthscales of the electrically-induced insulator-to-metal transition

Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a conducting filament. While this phenomenon has attracted much attention due to potential applications, many fundamental questions remain unaddressed. One of them is its characteristic lengths: what sets the size of these filaments, and how does this impact resistive switching properties. Here we use a combination of wide-field and scattering-type scanning near-field optical microscopies to characterize filament formation in NdNiO3 and SmNiO3 thin films. We find a clear trend: smaller filaments increase the current density, yielding sharper switching and a larger resistive drop. With the aid of numerical simulations, we discuss the parameters controlling the filament width and, hence, the switching properties.

Open access
preprint2022arXiv

A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces

We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. We demonstrate the possibility of tuning the electronic density in Al/STO by varying the Al layer thickness and show that the electronic structure evolution is well described by self-consistent tight binding supercell calculations, but differs qualitatively from a rigid band shift model. We show that both 2DES are strongly coupled to longitudinal optical phonons, in agreement with previous reports of a polaronic ground state in similar STO based 2DESs. Tuning the electronic density in Al/STO to match that of LAO/STO and comparing both systems, we estimate that the intrinsic LAO/STO 2DES has a bare band width of ~ 60 meV and a carrier density of ~ 6 10^13 cm-2.

Open access
preprint2020arXiv

Electronic transport in sub-micrometric channels at the LaAlO3_{3}/SrTiO3_{3} interface

Nanoscale channels realized at the conducting interface between LaAlO3_{3} and SrTiO3_{3} provide a perfect playground to explore the effect of dimensionality on the electronic properties of complex oxides. Here we compare the electric transport properties of devices realized using the AFM-writing technique and conventional photo-lithography. We find that the lateral size of the conducting paths has a strong effect on their transport behavior at low temperature. We observe a crossover from metallic to insulating regime occurring at about 50 K for channels narrower than 100 nm. The insulating upturn can be suppressed by the application of a positive backgate. We compare the behavior of nanometric constrictions in lithographically patterned channels with the result of model calculations and we conclude that the experimental observations are compatible with the physics of a quantum point contact.

Open access
preprint2019arXiv

Artificial quantum confinement in LAO3/STO heterostructure

Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation of the interfacial 2D electron system (2DES) discovered at the LAO3/STO3 (LAO/STO) interface. In samples prepared by growing a LAO layer onto a STO substrate, the 2DES is confined in a band bending potential well, whose width is set by the interface charge density and the STO dielectric properties, and determines the electronic band structure. Growing LAO (2 nm) /STO (x nm)/LAO (2 nm) heterostructures on STO substrates allows us to control the extension of the confining potential of the top 2DES via the thickness of the STO layer. In such samples, we explore the dependence of the electronic structure on the width of the confining potential using soft X-ray ARPES combined with ab-initio calculations. The results indicate that varying the thickness of the STO film modifies the quantization of the 3d t2g bands and, interestingly, redistributes the charge between the dxy and dxz/dyz bands.

Open access
preprint2016arXiv

Proposed cavity Josephson plasmonics with complex-oxide heterostructures

We discuss how complex-oxide heterostructures that include high-Tc superconducting cuprates can be used to realize an array of sub-millimeter cavities that support Josephson plasmon polaritons. These cavities have several attractive features for new types of light matter interaction studies and we show that they promote "ultrastrong" coupling between THz frequency radiation and Josephson plasmons. Cavity electrodynamics of Josephson plasmons allows to manipulate the superconducting order-parameter phase coherence. As an example, we discuss how it could be used to cool superconducting phase fluctuations with light.

Open access
preprint2015arXiv

Fabricating Superconducting Interfaces between Artificially-Grown LaAlO3_3 and SrTiO3_3 Thin Films

Realization of a fully metallic two-dimensional electron gas at the interface between artificially-grown LaAlO3_3 and SrTiO3_3 thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially-grown LaAlO3_3 and SrTiO3_3 thin films. Our results highlight the importance of two factors-the growth temperature and the SrTiO3_3 termination. We use local friction force microscopy and transport measurements to determine that in normal growth conditions the absence of a robust metallic state at low temperature in the artificially-grown LaAlO3_3/SrTiO3_3 interface is due to the nanoscale SrO segregation occurring on the SrTiO3_3 film surface during the growth and the associated defects in the SrTiO3_3 film. By adopting an extremely high SrTiO3_3 growth temperature, we demonstrate a way to realize metallic, down to the lowest temperature, and superconducting 2DEG at interfaces between LaAlO3_3 layers and artificially-grown SrTiO3_3 thin films. This study paves the way to the realization of functional LaAlO3_3/SrTiO3_3 superlattices and/or artificial LaAlO3_3/SrTiO3_3 interfaces on other substrates.

Open access

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