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Claudia Cancellieri

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ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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5 publications

preprint2020arXiv

High-resolution neutron imaging: a new approach to characterize water in anodic aluminum oxides

During the growth of anodic Al oxide layers water incorporates in the film and therefore influences the intrinsic properties of the oxide formed. In this study, we propose a new approach, based on the use of high-resolution neutron imaging, to visualize and quantify the water content in porous Al oxides as a function of anodizing conditions. Water in these porous films is either incorporated directly in the oxide structure (structural) and/or fills the pores (morphological). This preliminary study demonstrates that the differences in water content of porous anodic Al oxide layers are strongly related to the oxide growth parameters but interestingly cannot be directly correlated to a specific change in the amorphous oxide structure or in the pore morphology. Due to the high sensitivity of high-resolution neutron imaging to small changes in the water content, we furthermore show that the morphological water content in Al oxides formed in sulfuric acid as well as in phosphoric acid is partially reversible upon heat treatment and immersion. High-resolution neutron imaging is also found to be highly sensitive to structural disorder and crystallographic orientations, allowing to identify different crystalline Al oxide samples based on their structural and morphological defect content. This offers new perspectives to study the effect of the hydrogen and/or water incorporation as well as oxide-related structural modifications on Al oxihydroxides in relation to growth parameters, stability, functionalization as well as properties tuning, highly relevant to surface protection and their use as templates.

Open access
preprint2019arXiv

A combinatorial guide to phase formation and surface passivation of tungsten titanium oxide prepared by thermal oxidation

TiO2_2 and WO3_3 are two of the most important earth-abundant electronic materials with applications in countless industries. Recently alloys of WO3_3 and TiO2_2 have been investigated leading to improvements of key performance indicators for a variety of applications ranging from photo-electrochemical water splitting to electrochromic smart windows. These positive reports and the complexity of the ternary W-Ti-O phase diagram motivate a comprehensive experimental screening of this phase space. Using combinatorial thermal oxidation of solid solution W1−x_{1-x}Tix_{x} precursors combined with bulk and surface analysis mapping we investigate the oxide phase formation and surface passivation of tungsten titanium oxide in the entire compositional range from pure WO3_3 to TiO2_2. The system shows a remarkable structural transition from monoclinic over cubic to tetragonal symmetry with increasing Ti concentration. In addition, a strong Ti surface enrichment is observed for precursor Ti-concentrations in excess of 55 at.%, resulting in the formation of a protective rutile-structured TiO2_2 surface layer. Despite the structural transitions, the optical properties of the oxide alloys remain largely unaltered demonstrating an independent control of multiple functional properties in W1−x_{1-x}Tix_{x}On_{n}. The results from this study provide valuable guidelines for future development of W1−x_{1-x}Tix_{x}On_{n} for electronic and energy applications, but also novel engineering approaches for surface functionalization and additive manufacturing of Ti-based alloys.

Open access
preprint2019arXiv

Artificial quantum confinement in LAO3/STO heterostructure

Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation of the interfacial 2D electron system (2DES) discovered at the LAO3/STO3 (LAO/STO) interface. In samples prepared by growing a LAO layer onto a STO substrate, the 2DES is confined in a band bending potential well, whose width is set by the interface charge density and the STO dielectric properties, and determines the electronic band structure. Growing LAO (2 nm) /STO (x nm)/LAO (2 nm) heterostructures on STO substrates allows us to control the extension of the confining potential of the top 2DES via the thickness of the STO layer. In such samples, we explore the dependence of the electronic structure on the width of the confining potential using soft X-ray ARPES combined with ab-initio calculations. The results indicate that varying the thickness of the STO film modifies the quantization of the 3d t2g bands and, interestingly, redistributes the charge between the dxy and dxz/dyz bands.

Open access
preprint2015arXiv

Fabricating Superconducting Interfaces between Artificially-Grown LaAlO3_3 and SrTiO3_3 Thin Films

Realization of a fully metallic two-dimensional electron gas at the interface between artificially-grown LaAlO3_3 and SrTiO3_3 thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially-grown LaAlO3_3 and SrTiO3_3 thin films. Our results highlight the importance of two factors-the growth temperature and the SrTiO3_3 termination. We use local friction force microscopy and transport measurements to determine that in normal growth conditions the absence of a robust metallic state at low temperature in the artificially-grown LaAlO3_3/SrTiO3_3 interface is due to the nanoscale SrO segregation occurring on the SrTiO3_3 film surface during the growth and the associated defects in the SrTiO3_3 film. By adopting an extremely high SrTiO3_3 growth temperature, we demonstrate a way to realize metallic, down to the lowest temperature, and superconducting 2DEG at interfaces between LaAlO3_3 layers and artificially-grown SrTiO3_3 thin films. This study paves the way to the realization of functional LaAlO3_3/SrTiO3_3 superlattices and/or artificial LaAlO3_3/SrTiO3_3 interfaces on other substrates.

Open access
preprint2013arXiv

Doping-dependent band structure of LaAlO3_{3}/SrTiO3_{3} interfaces by soft x-ray polarization-controlled resonant angle-resolved photoemission

Polarization-controlled synchrotron radiation was used to map the electronic structure of buried conducting interfaces of LaAlO3_3/SrTiO3_3 in a resonant angle-resolved photoemission experiment. A strong dependence on the light polarization of the Fermi surface and band dispersions is demonstrated, highlighting the distinct Ti 3d orbitals involved in 2D conduction. Samples with different 2D doping levels were prepared and measured by photoemission, revealing different band occupancies and Fermi surface shapes. A direct comparison between the photoemission measurements and advanced first-principle calculations carried out for different 3d-band fillings is presented in conjunction with the 2D carrier concentration obtained from transport measurements.

Open access

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