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Researcher profile

Claudia Cancellieri

Claudia Cancellieri contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

3 published item(s)

preprint2020arXiv

High-resolution neutron imaging: a new approach to characterize water in anodic aluminum oxides

During the growth of anodic Al oxide layers water incorporates in the film and therefore influences the intrinsic properties of the oxide formed. In this study, we propose a new approach, based on the use of high-resolution neutron imaging, to visualize and quantify the water content in porous Al oxides as a function of anodizing conditions. Water in these porous films is either incorporated directly in the oxide structure (structural) and/or fills the pores (morphological). This preliminary study demonstrates that the differences in water content of porous anodic Al oxide layers are strongly related to the oxide growth parameters but interestingly cannot be directly correlated to a specific change in the amorphous oxide structure or in the pore morphology. Due to the high sensitivity of high-resolution neutron imaging to small changes in the water content, we furthermore show that the morphological water content in Al oxides formed in sulfuric acid as well as in phosphoric acid is partially reversible upon heat treatment and immersion. High-resolution neutron imaging is also found to be highly sensitive to structural disorder and crystallographic orientations, allowing to identify different crystalline Al oxide samples based on their structural and morphological defect content. This offers new perspectives to study the effect of the hydrogen and/or water incorporation as well as oxide-related structural modifications on Al oxihydroxides in relation to growth parameters, stability, functionalization as well as properties tuning, highly relevant to surface protection and their use as templates.

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preprint2019arXiv

A combinatorial guide to phase formation and surface passivation of tungsten titanium oxide prepared by thermal oxidation

TiO$_2$ and WO$_3$ are two of the most important earth-abundant electronic materials with applications in countless industries. Recently alloys of WO$_3$ and TiO$_2$ have been investigated leading to improvements of key performance indicators for a variety of applications ranging from photo-electrochemical water splitting to electrochromic smart windows. These positive reports and the complexity of the ternary W-Ti-O phase diagram motivate a comprehensive experimental screening of this phase space. Using combinatorial thermal oxidation of solid solution W$_{1-x}$Ti$_{x}$ precursors combined with bulk and surface analysis mapping we investigate the oxide phase formation and surface passivation of tungsten titanium oxide in the entire compositional range from pure WO$_3$ to TiO$_2$. The system shows a remarkable structural transition from monoclinic over cubic to tetragonal symmetry with increasing Ti concentration. In addition, a strong Ti surface enrichment is observed for precursor Ti-concentrations in excess of 55 at.%, resulting in the formation of a protective rutile-structured TiO$_2$ surface layer. Despite the structural transitions, the optical properties of the oxide alloys remain largely unaltered demonstrating an independent control of multiple functional properties in W$_{1-x}$Ti$_{x}$O$_{n}$. The results from this study provide valuable guidelines for future development of W$_{1-x}$Ti$_{x}$O$_{n}$ for electronic and energy applications, but also novel engineering approaches for surface functionalization and additive manufacturing of Ti-based alloys.

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preprint2019arXiv

Artificial quantum confinement in LAO3/STO heterostructure

Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation of the interfacial 2D electron system (2DES) discovered at the LAO3/STO3 (LAO/STO) interface. In samples prepared by growing a LAO layer onto a STO substrate, the 2DES is confined in a band bending potential well, whose width is set by the interface charge density and the STO dielectric properties, and determines the electronic band structure. Growing LAO (2 nm) /STO (x nm)/LAO (2 nm) heterostructures on STO substrates allows us to control the extension of the confining potential of the top 2DES via the thickness of the STO layer. In such samples, we explore the dependence of the electronic structure on the width of the confining potential using soft X-ray ARPES combined with ab-initio calculations. The results indicate that varying the thickness of the STO film modifies the quantization of the 3d t2g bands and, interestingly, redistributes the charge between the dxy and dxz/dyz bands.

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