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Stefan Wundrack

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cond-mat.mes-hall cond-mat.mtrl-sci Applications math.NA Numerical Analysis physics.app-ph physics.optics

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preprint2022arXiv

Assessment of sub-sampling schemes for compressive nano-FTIR imaging

Nano-FTIR imaging is a powerful scanning-based technique at nanometer spatial resolution which combines Fourier transform infrared spectroscopy (FTIR) and scattering-type scanning near-field optical microscopy (s-SNOM). However, recording large spatial areas with nano-FTIR is limited by long measurement times due to its sequential data acquisition. Several mathematical approaches have been proposed to tackle this problem. All of them have in common that only a small fraction of randomly chosen measurements is required. However, choosing the fraction of measurements in a random fashion poses practical challenges for scanning procedures and does not lead to time savings as large as desired. We consider different, practically relevant sub-sampling schemes assuring a faster acquisition. It is demonstrated that results for almost all considered sub-sampling schemes, namely original Lissajous, triangle Lissajous, and random reflection sub-sampling, at a sub-sampling rate of 10%, are comparable to results when using a random sub-sampling of 10%. This implies that random sub-sampling is not required for efficient data acquisition.

preprint2020arXiv

Silicon carbide stacking-order-induced doping variation in epitaxial graphene

Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substrate and overcompensation by donor-like states related to the buffer layer. In this work, we evidence that this effect is also related to the specific underlying SiC terrace. We fabricated a periodic sequence of non-identical SiC terraces, which are unambiguously attributed to specific SiC surface terminations. A clear correlation between the SiC termination and the electronic graphene properties is experimentally observed and confirmed by various complementary surface-sensitive methods. We attribute this correlation to a proximity effect of the SiC termination-dependent polarization doping on the overlying graphene layer. Our findings open a new approach for a nano-scale doping-engineering by self-patterning of epitaxial graphene and other 2D layers on dielectric polar substrates.

preprint2015arXiv

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro steps evolving during graphene growth. A more advantageous type of sub-nanometer stepped graphene layers is obtained with a new method: a high-temperature conditioning of the SiC surface in argon atmosphere. The results can be explained by the observed graphene buffer layer domains after the conditioning process which suppress giant step bunching and graphene step flow growth. The superior electronic quality is demonstrated by a less extrinsic resistance anisotropy obtained in nano-probe transport experiments and by the excellent quantization of the Hall resistance in low-temperature magneto-transport measurements. The quantum Hall resistance agrees with the nominal value (half of the von Klitzing constant) within a standard deviation of 4.5*10(-9) which qualifies this method for the fabrication of electrical quantum standards.

preprint2014arXiv

Functional single-layer graphene sheets from aromatic monolayers

We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic and spectroscopic techniques and by electrical transport measurements. As substrates we successfully use Cu(111) single crystals and the technologically relevant polycrystalline copper foils.